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| 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(BR)DSS Min (V) rDS(on) Max (W) 5 @ VGS = 10 V 7.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5 @ VGS = 10 V VGS(th) (V) 0.8 to 3 1 to 2.5 0.8 to 2.5 0.8 to 2.5 0.8 to 3 ID (A) 0.2 0.115 0.225 0.225 0.5 FEATURES D D D D D Low On-Resistance: 2.5 W Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-226AA (TO-92) S 1 G G 2 S D 3 2 1 TO-236 (SOT-23) 3 D Top View Top View 2N7000 Marking Code: 72wll 72 = Part Number Code for 2N7002 w = Week Code ll = Lot Traceability Dual-In-Line D1 N S1 G1 NC G2 N S2 D2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 D4 S4 G4 NC G3 G S3 D3 N S 3 2 D 1 N TO-92-18RM (TO-18 Lead Form) Top View Plastic: VQ1000J Sidebraze: VQ1000P Top View BS170 Document Number: 70226 S-04279--Rev. F, 16-Jul-01 www.vishay.com 11-1 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Single Parameter Drain-Source Voltage Gate-Source Voltage--Non-Repetitive Gate-Source Voltage--Continuous Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation TA= 25_C TA= 100_C TA= 25_C TA= 100_C Total Quad VQ1000J/P BS170 60 "25 "20 0.225 0.14 1 1.3 0.52 96 2 0.8 62.5 156 0.83 W _C/W _C "20 0.5 0.175 A V Symbol VDS VGSM VGS ID IDM PD RthJA TJ, Tstg 2N7000 60 "40 "20 0.2 0.13 0.5 0.4 0.16 312.5 2N7002 60 "40 "20 0.115 0.073 0.8 0.2 0.08 625 VQ1000J 60 "30 "20 0.225 0.14 1 1.3 0.52 96 VQ1000P 60 Unit Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range -55 to 150 Notes a. Pulse width limited by maximum junction temperature. b. tp v 50 ms. SPECIFICATIONS 2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N7000 2N7002 Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Symbol Test Conditions VGS = 0 V, ID = 10 mA VDS = VGS, ID = 1 mA VDS = VGS, ID = 0.25 mA VDS = 0 V, VGS = "15 V VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V Typa Min Max Min Max Unit V(BR)DSS VGS(th) IGSS 70 2.1 2.0 60 0.8 3 60 V 1 "10 "100 1 1000 1 500 mA m 2.5 nA Gate-Body Leakage Zero Gate Voltage Drain Current IDSS TC = 125_C VDS = 60 V, VGS = 0 V TC = 125_C VDS = 10 V, VGS = 4.5 V VDS = 7.5 V, VGS = 10 V VGS = 4.5 V, ID = 0.075 A VGS = 5 V, ID = 0.05 A 0.35 1 4.5 3.2 5.8 2.4 4.4 100 0.5 0.075 On-State Drain Currentb ID(on) 0.5 5.3 7.5 13.5 5 9 80 7.5 13.5 A Drain-Source On-Resistanceb rDS(on) TC = 125_C VGS = 10 V, ID = 0.5 A TJ = 125_C W Forward Transconductanceb Common Source Output Conductanceb gfs gos VDS = 10 V, ID = 0.2 A VDS = 5 V, ID = 0.05 A mS Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V f = 1 MHz 22 11 2 60 25 5 50 25 5 pF www.vishay.com 11-2 Document Number: 70226 S-04279--Rev. F, 16-Jul-01 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix SPECIFICATIONS 2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N7000 2N7002 Parameter Switchingd Turn-On Time Turn-Off Time Turn-On Time Turn-Off Time Symbol Test Conditions Typa Min Max Min Max Unit tON tOFF tON tOFF VDD = 15 V, RL = 25 W ID ^0.5 A, VGEN = 10 V, RG = 25 W VDD = 30 V, RL = 150 W ID ^ 0.2 A, VGEN = 10 V, RG = 25 W 7 7 7 11 10 10 20 20 ns SPECIFICATIONS VQ1000J/P AND BS170 (TA = 25_C UNLESS OTHERWISE NOTED) Limits VQ1000J/P BS170 Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Symbol Test Conditions VGS = 0 V, ID = 100 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "10 V TJ = 125_C VDS = 0 V, VGS = "15 V VDS = 25 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V VDS = 10 V, VGS = 10 V VGS = 5 V, ID = 0.2 A VGS = 10 V, ID = 0.2 A VGS = 10 V, ID = 0.3 A TJ = 125_C VDS = 10 V, ID = 0.2 A VDS = 10 V, ID = 0.5 A VDS =5 V, ID = 0.05 A Typa Min Max Min Max Unit V(BR)DSS VGS(th) 70 2.1 60 0.8 2.5 "100 "500 60 0.8 3 V Gate-Body Leakage IGSS nA "10 0.5 Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ID(on) 500 10 1 4 2.3 2.3 4.2 5.5 7.6 100 100 0.5 0.5 7.5 5 m mA A Drain-Source On-Resistanceb rDS(on) W Forward Transconductanceb Common Source Output Conductanceb gfs gos mS Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS =25 V, VGS = 0 V f = 1 MHz 22 11 2 60 25 5 60 pF Switchingd Turn-On Time Turn-Off Time Turn-On Time Turn-Off Time tON tOFF tON tOFF VDD = 15 V, RL = 23 W ID ^ 0.6 A, VGEN = 10 V, RG = 25 W VDD = 25 V, RL = 125 W ID ^ 0.2 A, VGEN = 10 V, RG = 25 W 7 7 7 7 10 10 10 10 ns Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v80 ms duty cycle v1%. c. This parameter not registered with JEDEC. d. Switching time is essentially independent of operating temperature. Document Number: 70226 S-04279--Rev. F, 16-Jul-01 VNBF06 www.vishay.com 11-3 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics 1.0 VGS = 10, 9, 8, 7 V 0.8 ID - Drain Current (A) 6.5 V 6V ID - Drain Current (A) 5.5 V 0.6 5V 0.4 4.5 V 4V 3.5 V 3V 0.0 0 1 2 3 4 5 0.8 TJ = -55_C 25_C 0.6 125_C 0.4 1.0 Transfer Characteristics 0.2 0.2 2.5 V 2, 1 V 6 0.0 0 1 2 3 4 5 6 7 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 7 6 rDS(on) - On-Resistance ( ) rDS @ 5 V = VGS 5 4 3 2 1 0 0.0 rDS @ 10 V = VGS C - Capacitance (pF) 40 60 VGS = 0 V f = 1 MHz 50 Capacitance 30 Ciss 20 Coss 10 Crss 0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 35 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 20 ID = 0.5 A VGS - Gate-to-Source Voltage (V) 16 Gate Charge 2.0 On-Resistance vs. Junction Temperature rDS(on) - On-Resistance ( ) (Normalized) VGS = 10 V, rDS @ 0.5 A 1.5 12 VDS = 30 V 8 1.0 VGS = 5 V, rDS @ 0.05 A 0.5 4 0 0 400 800 1200 1600 2000 2400 0.0 -55 -30 -5 20 45 70 95 120 145 Qg - Total Gate Charge (pC) TJ - Junction Temperature (_C) www.vishay.com 11-4 Document Number: 70226 S-04279--Rev. F, 16-Jul-01 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage 1.000 6 On-Resistance vs. Gate-to-Source Voltage 5 TJ = 125_C IS - Source Current (A) 0.100 rDS(on) - On-Resistance ( ) ID = 50 mA 4 500 mA 3 TJ = 25_C 0.010 2 1 0.001 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 12 14 16 18 20 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.50 ID = 250 mA 0.25 VGS(th) - Variance (V) -0.00 -0.25 -0.50 -0.75 -50 -25 0 25 50 75 100 125 150 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.01 Single Pulse 0.01 0.1 1 10 100 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) 1K 10 K t1 - Square Wave Pulse Duration (sec) Document Number: 70226 S-04279--Rev. F, 16-Jul-01 www.vishay.com 11-5 |
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