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Semiconductor
HA-5127/883
Ultra Low Noise, Precision Operational Amplifier
The HA-5127/883 monolithic operational amplifier features an excellent combination of precision DC and wideband high speed characteristics. Utilizing the Harris D.I. technology and advanced processing techniques, this unique design unites low noise precision instrumentation performance with high speed, wideband capability. This amplifier's impressive list of features include low VOS, wide gain-bandwidth, high open loop gain, and high CMRR. Additionally, this flexible device operates over a wide supply range while consuming only 120mW of power. Using the HA-5127/883 allows designers to minimize errors while maximizing speed and bandwidth. This device is ideally suited for low level transducer signal amplifier circuits. Other applications which can utilize the HA-5127/883's qualities include instrumentation amplifiers, pulse or RF amplifiers, audio preamplifiers, and signal conditioning circuits.
July 1994
Features
* This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. * High Slew Rate . . . . . . . . . . . . . . . . . . . . . . . 7V/s (Min) * Unity Gain Bandwidth . . . . . . . . . . . . . . . . . 5MHz (Min) * Low Noise Voltage (at 1kHz) . . . . . . . . 4.5nV/Hz (Max) * Low Offset Voltage. . . . . . . . . . . . . . . . . . . .100V (Max) * Low Offset Drift With Temperature. . . . 1.8V/oC (Max) * High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . . 100dB (Min) * High Voltage Gain . . . . . . . . . . . . . . . . . . 700kV/V (Min)
Applications
* High Speed Signal Conditioners * Wide Bandwidth Instrumentation Amplifiers * Low Level Transducer Amplifiers * Fast, Low Level Voltage Comparators * Highest Quality Audio Preamplifiers * Pulse/RF Amplifiers
Ordering Information
PART NUMBER HA2-5127/883 HA4-5127/883 HA7-5127/883 TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC PACKAGE 8 Pin Can 20 Lead Ceramic LCC 8 Lead CerDIP
-55oC to +125oC
Pinouts
HA-5127/883 (CERDIP) TOP VIEW
NC BAL -IN +IN V1 2 3 4 + 8 7 6 5 BAL V+ OUT NC NC -IN NC +IN NC 4 5 6 7 8 9 NC 10 11 12 13 NC NC NC V+
HA-5127/883 (CLCC) TOP VIEW
BAL BAL NC NC
HA-5127/883 (METAL CAN) TOP VIEW
BAL 8 18 NC 17 V+ 16 NC 15 OUT 14 NC +IN 3 4 V- (CASE) 5 NC -IN 2 BAL 1 + 7 V+
3
2
1 20 19
6 OUT
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
(c) Harris Corporation 1994
Spec Number
3-129
511008-883 File Number 3751
Specifications HA-5127/883
Absolute Maximum Ratings
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 44V Differential Input Voltage (Note 2) . . . . . . . . . . . . . . . . . . . . . . . 0.7V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VInput Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Differential Output Current . . . . . . . . . . .Full Short Circuit Protection Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC
Thermal Information
Thermal Resistance JA JC CerDIP Package . . . . . . . . . . . . . . . . . . . 115oC/W 28oC/W Ceramic LCC Package . . . . . . . . . . . . . . 65oC/W 15oC/W Metal Can Package . . . . . . . . . . . . . . . . . 155oC/W 67oC/W Package Power Dissipation Limit at +75oC for TJ +175oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW Package Power Dissipation Derating Factor Above +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/oC Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/oC Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Recommended Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V VINCM 1/2 (V+ - V-) RL 600
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = 15V, RSOURCE = 50, RLOAD = 100k, VOUT = 0V, Unless Otherwise Specified. GROUP A SUBGROUPS 1 2, 3 Input Bias Current IB VCM = 0V, RS = 10k, 50 1 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC MIN -100 -300 MAX 100 300 80 150 UNITS V V nA nA
PARAMETERS Input Offset Voltage
SYMBOL VIO
CONDITIONS VCM = 0V
+I B + -I B ----------------- 2
Input Offset Current
IIO
VCM = 0V, +RS = 10k, -RS = 10k V+ = +4.7V, V- = -25.3V V+ = +25.3V, V- = -4.7V VOUT = 0V and +10V, RL = 2k VOUT = 0V and -10V, RL = 2k VCM = +11V VCM = +10V
1 2, 3 1 2, 3 1 2, 3 4 5, 6 4 5, 6 1 2, 3 1 2, 3
+25oC +125oC, -55oC
-75 -135 10.3 10.3 700 300 700 300 100 100 100 100
75 135 -10.3 -10.3 -
nA nA V V V V kV/V kV/V kV/V kV/V dB dB dB dB
Common Mode Range
+CMR
+25oC +125oC, -55oC
-CMR
+25oC +125oC, -55oC
Large Signal Voltage Gain
+AVOL
+25oC +125oC, -55oC
-AVOL
+25oC +125oC, -55oC
Common Mode Rejection Ratio
+CMRR
+25oC +125oC, -55oC
-CMRR
VCM = -11V VCM = -10V
+25oC +125oC, -55oC
Spec Number 3-130
511008-883
Specifications HA-5127/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = 15V, RSOURCE = 50, RLOAD = 100k, VOUT = 0V, Unless Otherwise Specified. GROUP A SUBGROUPS 4 5, 6 -VOUT1 RL = 2k 4 5, 6 +VOUT2 -VOUT2 Output Current +IOUT -IOUT Quiescent Power Supply Current +ICC RL = 600 RL = 600 VOUT = -10V VOUT = +10V VOUT = 0V, IOUT = 0mA 4 4 4 4 1 2, 3 -ICC VOUT = 0V, IOUT = 0mA 1 2, 3 Power Supply Rejection Ratio +PSRR VSUP = 14V VSUP = 13.5V -PSRR VSUP = 14V VSUP = 13.5V Offset Voltage Adjustment +VIOAdj Note 1 1 2, 3 1 2, 3 1 2, 3 -VIOAdj Note 1 1 2, 3 NOTE: 1. Offset adjustment range is [VIO (Measured) 1mV] minimum referred to output. This test is for functionality only to assure adjustment through 0V. 2. For differential input voltages greater than 0.7V, the input current must be limited to 25mA to protect the back-to-back input diodes. LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +25oC +25oC +25oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN 11.5 11.5 10 16.5 -4 -4 86 86 86 86 VIO-1 VIO-1 VIO+1 VIO+1 MAX -11.5 -11.5 -10 -16.5 4 4 UNITS V V V V V V mA mA mA mA mA mA dB dB dB dB mV mV mV mV
PARAMETERS Output Voltage Swing
SYMBOL +VOUT1
CONDITIONS RL = 2k
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = 15V, RSOURCE = 50, RLOAD = 2k, CLOAD = 50pF, AVCL = +1V/V, Unless Otherwise Specified. GROUP A SUBGROUP 7 7 7 7 7 7 LIMITS TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN 7 7 MAX 150 150 40 40 UNITS V/s V/s ns ns % %
PARAMETERS Slew Rate
SYMBOL +SR -SR
CONDITIONS VOUT = -3V to +3V VOUT = +3V to -3V VOUT = 0 to +200mV 10% TR 90% VOUT = 0 to -200mV 10% TF 90% VOUT = 0 to +200mV VOUT = 0 to -200mV
Rise and Fall Time
tR tF
Overshoot
+OS -OS
Spec Number 3-131
511008-883
Specifications HA-5127/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = 15V, RLOAD = 2k, CLOAD = 50pF, AV = +1V/V, Unless Otherwise Specified. LIMITS PARAMETERS Average Offset Voltage Drift Differential Input Resistance Low Frequency Peak-to-Peak Noise Input Noise Voltage Density SYMBOL VIOTC RIN ENP-P EN CONDITIONS VCM = 0V VCM = 0V 0.1Hz to 10Hz NOTES 1 1 1 TEMPERATURE -55oC to +125oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC -55oC to +125oC +25oC +25oC -55oC to +125oC MIN 0.8 MAX 1.8 0.25 UNITS V/oC M VP-P nV/Hz nV/Hz nV/Hz pA/Hz pA/Hz pA/Hz MHz kHz V/V s mW
RS = 20, fO = 10Hz RS = 20, fO = 100Hz RS = 20, fO = 1kHz
1 1 1 1 1 1 1 1, 2 1
5 111 1 -
10.0 5.6 4.5 4.0 2.3 0.6 -
Input Noise Current Density
IN
RS = 2M, fO = 10Hz RS = 2M, fO = 100Hz RS = 2M, fO = 1kHz
Unity Gain Bandwidth Full Power Bandwidth Minimum Closed Loop Stable Gain Settling Time Output Resistance Quiescent Power Consumption NOTES:
UGBW FPBW CLSG
VO = 100mV VPEAK = 10V RL = 2k, CL = 50pF To 0.1% for a 10V Step Open Loop VOUT = 0V, IOUT = 0mA
tS ROUT PC
1 1 1, 3
2 100 120
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2VPEAK). 3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on output.)
TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group A Test Requirements Groups C and D Endpoints NOTES: 1. PDA applies to Subgroup 1 only. 2. The Subgroup assignments of the parameters in these tables were patterned after Mil-M-38510/135, with the exception of VIO, which is Subgroups 1, 2, 3. SUBGROUPS (SEE TABLES 1 AND 2) (NOTE 2) 1 1 (Note 1), 2, 3, 4, 5, 6, 7 1, 2, 3, 4, 5, 6, 7 1
Spec Number 3-132
511008-883
HA-5127/883 Die Characteristics
DIE DIMENSIONS: 104 x 65 x 19 mils 1 mils 2650 x 1650 x 483m 25.4m METALLIZATION: Type: Al, 1% Cu Thickness: 16kA 2kA GLASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.) Silox Thickness: 12kA 2kA Nitride Thickness: 3.5kA 1.5kA WORST CASE CURRENT DENSITY: 3.6 x 105A/cm2 This device meets Glassivation Integrity Test Requirement per MIL-STD-883 Method 2021 and MIL-I-38535 Paragraph 30.5.5.4. SUBSTRATE POTENTIAL (Powered Up): VTRANSISTOR COUNT: 63 PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5127/883
BAL
BAL
-IN V+ +IN
OUT
V-
NC
Spec Number 3-133
511008-883

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