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| Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2N5551 FEATURES Power dissipation PCM : 0.625 W (Tamb=25) 1. EMITTER TRANSISTOR (NPN) TO-92 Collector current A ICM: 0.6 Collector-base voltage V(BR)CBO : 180 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 2. BASE 3. COLLECTOR 123 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter voltage breakdown Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCEsat VBEsat unless otherwise specified) Test conditions MIN 180 160 6 0.1 0.1 80 80 50 0.5 1 80 V V MHz 250 TYP MAX UNIT V V V Ic= 100 A, IE=0 Ic= 100 A, IB=0 IE= 100 A, IC=0 VCB= 180 V, IE=0 VEB= 4 V, IC=0 VCE= 5 V, IC= 1 mA VCE= 5 V, IC = 10 mA VCE= 5 V, IC= 50 mA IC= 50 mA, IB= 5 mA IC= 50 mA, IB= 5 mA VCE= 5 V,IC= 10 mA, f =30MHz Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current A A fT CLASSIFICATION OF hFE(2) Rank Range A 80-160 B 120-180 C 150-250 |
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