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| TPCF8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCF8402 Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications * Low drain-source ON resistance : P Channel RDS (ON) = 60 m (typ.) N Channel RDS (ON) = 38 m (typ.) High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel |Yfs| = 6.8 S (typ.) Low leakage current : P Channel IDSS = -10 A (VDS = -30 V) N Channel IDSS = 10 A (VDS = 30 V) Enhancement-mode : P Channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Unit: mm * * * Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg -30 -30 20 -3.2 -12.8 1.35 1.12 0.53 0.33 0.67 -1.6 0.11 150 -55~150 Rating 30 30 20 4.0 16.0 1.35 1.12 W 0.53 0.33 2.6 2.0 mJ A mJ C C Unit V V V A JEDEC JEITA TOSHIBA 2-3U1B Weight: 0.011 g (typ.) Single-device operation (Note 3a) Single-device value at dual operation(Note 3b) Single-device operation (Note 3a) Single-device value at dual operation(Note 3b) Circuit Configuration 8 7 6 5 Single pulse avalanche energy(Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range 1 2 3 4 Marking (Note 6) 8 5 F6B Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 4 1 2003-08-18 TPCF8402 Thermal Characteristics Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 92.6 C/W 111.6 235.8 C/W 378.8 Unit Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) 25.4 (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) 25.4 (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: P Channel: VDD = -24 V, Tch = 25C (initial), L = 0.2 mH, RG = 25 , IAR = -1.6 A N Channel: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 2.0 A Note 5: Repetitive rating; Pulse width limited by Max. Channel temperature. Note 6: Black round marking " " locates on the left lower side of parts number marking "F6B indicates terminal No. 1. 2 2003-08-18 TPCF8402 P-ch Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS ton 0V -10 4.7 ID = -1.6 A VOUT RL = 9.38 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -30 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = -1 mA VGS = -4.5 V, ID = -1.6A VGS = -10 V, ID = -1.6 A VDS = -10 V, ID = -1.6 A Min -30 -15 -0.8 2.9 Typ. 80 60 5.9 600 60 70 5.3 12 8.4 34 14 1.4 2.7 Max 10 -10 -2.0 105 72 ns nC pF Unit A A V V m S Duty < 1%, tw = 10 s = VDD -15 V - VDD - -24 V, VGS = -10 V, ID = -3.2 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -3.2 A, VGS = 0 V Min Typ. Max -12.8 1.2 Unit A V 3 2003-08-18 TPCF8402 N-ch Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS Turn-on time Switching time Fall time tf toff Qg Qgs1 Qgd VDD 24 V, VGS = 10 V, ID = 6 A ton 4.7 10 V 0V ID = 2.0 A VOUT RL = 7.5 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 2.0 A VGS = 10 V, ID = 2.0 A VDS = 10 V, ID = 2.0 A Min 30 15 1.3 3.4 Typ. 58 38 6.8 470 60 80 5.2 Max 10 10 2.5 77 50 ns 4.0 nC pF Unit A A V V m S 8.3 VDD 15 V - Duty < 1%, tw = 10 s = 22 10 1.7 2.4 Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 4.0 A, VGS = 0 V Min Typ. Max 16.0 -1.2 Unit A V 4 2003-08-18 TPCF8402 P-ch ID - VDS -5 -10 -6 -4 -4.5 -3.5 -3.0 Common source Ta = 25C Pulse test -10 -10 -3.5 ID - VDS -3.0 -4.5 -6 -6 -2.8 -4 -2.7 -2.6 -2 -2.5 VGS = -2.3 V 0 0 -1 -2 -3 -4 -5 Common source Ta = 25C Pulse test -8 (A) ID -3 -2.7 -2.6 Drain current -2 -2.5 -1 VGS = -2.3 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 Drain-source voltage VDS (V) Drain current ID (A) -2.8 Drain-source voltage VDS (V) ID - VGS -8 -2.0 Common source VDS = -10 V VDS - VGS Common source Drain-source voltage VDS ID (A) -6 Pulse test (V) Ta= 25 -1.6 Pulse test -1.2 Drain current -4 -0.8 -1.6 -0.4 -0.8 ID = -3.2A -2 100 0 Ta = -55C 25 -2 -3 -4 -5 0 -1 0 0 -2 -4 -6 -8 -10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 100 1000 Common source VDS = -10 V Pulse test Common source Ta = 25C Pulse test RDS (ON) - ID Forward transfer admittance Yfs (S) Ta = -55C 10 100 25 Drain-source ON resistance RDS (ON) (m) 100 VGS = -4.5 V -10 1 -0.1 -0.3 -1 -3 -10 10 0.1 -1 -10 Drain current Drain current ID (A) ID (A) 5 2003-08-18 TPCF8402 P-ch RDS (ON) - Ta 150 10 5 3 -5.0 -10 -3.0 -1.0 VGS = 0 V IDR - VDS Drain-source ON resistance RDS (ON) (m) 120 Drain reverse current 90 VGS = -4.5V IDR ID = -0.8A, -1.5A, -4.5A (A) 1 0.5 0.3 Common source Ta = 25C Pulse test 0.1 0 60 VGS = -10V 30 ID = -0.8A, -1.5A, -4.5A Common source Pulse test 0 -80 -40 0 40 80 120 160 0.3 0.6 0.9 1.2 1.5 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 1000 -2.0 Vth - Ta Ciss (V) Gate threshold voltage Vth -1.5 -1.0 C Capacitance 100 (pF) Coss Crss Common source VGS = 0 V f = 1 MHz Common source -0.5 VDS = -10 V ID = -1mA Pulse test 0 -80 Ta = 25C 10 -0.1 -1 -3 -5 -10 -30 -50 -100 -40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2.0 Device mounted on a glass-epoxy board (a) (Note 2a) (1)Single-device operation (Note 3a) Dynamic input/output characteristics -30 VDS VDD = -24V -20 VDD = -6V -15 -12 -10 -6 -5 -12 Common source ID = -3.2 A Ta = 25C Pulse test 4 8 12 0 16 -5 VGS -10 -15 (W) (V) (2)Single-device value at dual operation (Note 3b) 1.6 (1) 1.2 (2) 0.8 (3) 0.4 (4) 0 0 Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 5s -25 -24 40 80 120 160 200 0 0 Ambient temperature Ta (C) Total gate charge Qg (nC) 6 2003-08-18 Gate-source voltage VGS PD Drain power dissipation Drain-source voltage VDS (V) TPCF8402 P-ch rth - tw 1000 Single pulse (4) (3) (2) Transient thermal impedance rth ( /W) 100 (1) 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area -100 ID max (pulseed) * (A) -10 1 ms * Drain current ID 10 ms * -1 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. -0.1 -0.1 VDSS max -10 -100 -1 Drain-source voltage VDS (V) 7 2003-08-18 TPCF8402 N-ch ID - VDS 5 8.0 4 6.0 10 4.5 3.8 3.5 Common source Ta = 25C Pulse test 10 10 8.0 6.0 4.5 3.8 ID - VDS Common source Ta = 25C Pulse test 8 (A) ID 3 ID (A) 6 3.2 3.5 Drain current 2 3.0 1 VGS = 2.8 V 0 Drain current 4 3.2 2 3.0 VGS = 2.8 V 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 8 Common source 2.0 VDS = 10 V Pulse tset 6 VDS - VGS Common source Ta= 25 Pulse test (V) Drain-source voltage VDS 25 100 Ta = -55C 1.6 (A) ID 1.2 Drain current 4 0.8 2 0.4 1 0 2 ID = 4A 0 0 1 2 3 4 5 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 100 100 Common source VDS = 10 V Pulse test Ta = -55C 10 100 25 RDS (ON) - ID Yfs (S) Forward transfer admittance Drain-source ON resistance RDS (ON) (m) 4.5 VGS = 10V 30 1 Common source Ta = 25C Pulse test 1 10 0.1 0 0.3 1 3 10 10 0.1 Drain current ID (A) Drain current ID (A) 8 2003-08-18 TPCF8402 N-ch RDS (ON) - Ta 120 Common source ID = 4A 2A VGS = 4.5V 60 1A Pulse test 10 10 5.0 3.0 1.0 VGS = 0 V 1 0.5 0.3 Common source Ta = 25C Pulse test 0 -80 -40 0 40 80 120 160 0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 5 3 IDR - VDS Drain-source ON resistance RDS (ON) (m ) 80 40 ID = 4, 2, 1A 20 VGS = 10V Ambient temperature Ta (C) Drain reverse current IDR (A) 100 Drain-source voltage VDS (V) Capacitance - VDS 1000 Ciss 3 Vth - Ta 100 Gate threshold voltage Vth (pF) (V) Coss Crss 2 Capacitance C 10 Common source VGS = 0 V f = 1 MHz Ta = 25C 1 Common source VDS = 10 V ID = 1mA Pulse test 1 0.1 0.3 1 3 5 10 30 50 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2.0 Device mounted on a glass-epoxy board (a) (Note 2a) (1)Single-device operation (Note 3a) Dynamic input/output characteristics 30 15 (W) (V) 1.6 (1) 1.2 (2) 0.8 (3) 0.4 (4) 0 0 Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 5s 25 PD Drain-source voltage VDS 20 VDD = 6V 15 12 10 6 5 24 10 Drain power dissipation Common source 12 ID = 4.0A Ta = 25C Pulse test 5 40 80 120 160 200 0 0 4 8 12 0 16 Ambient temperature Ta (C) total gate charge Qg (nC) 9 2003-08-18 Gate-source voltage VGS VDD = 24V VGS (V) (2)Single-device value at dual operation (Note 3b) VDS TPCF8402 N-ch rth - tw 1000 Single Pulse (4) (3) (2) Transient thermal impedance rth ( /W) 100 (1) 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 100 ID max (Pulsed) * (A) 10 1 ms * ID Drain current 10 ms * 1 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 0.1 VDSS max 10 100 1 Drain-source voltage VDS (V) 10 2003-08-18 TPCF8402 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 11 2003-08-18 |
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