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Power Transistors
2SC6012
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.50.5
(10.0)
Unit: mm
3.20.1 5
(4.5)
3.00.3 5
Features
* High breakdown voltage, and high reliability through the use of a glass passivation layer * High-speed switching * Wide safe oeration area
26.50.5
(23.4)
(2.0)
5 (4.0) 2.00.2 1.10.1 0.70.1 5.450.3 10.90.5
5.50.3
5 5
Absolute Maximum Ratings TC = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current * Collector power dissipation Ta = 25C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VEBO IB IC ICP PC Rating 1 700 1 700 7 3 15 24 60 3 150 -55 to +150 C C Unit V V V A A A W
3.30.3
18.60.5 (2.0) Solder Dip
5
1
2
3
(2.0)
1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package
Internal Connection
C B E
Note) *: Non-repetitive peak collector current
Electrical Characteristics TC = 25C 3C
Parameter Emitter-base voltage (Collector open) Forward voltage * Collector-base cutoff current (Emitter open) Forward current transfer ratio * Collector-emitter saturation voltage * Base-emitter saturation voltage Transition frequency Storage time Fall time
* *
Symbol VEBO VF ICBO hFE VCE(sat) VBE(sat) fT tstg tf IF = 7.0 A
Conditions IE = 750 mA, IC = 0 VCB = 1 000 V, IE = 0 VCB = 1 700 V, IE = 0 VCE = 5 V, IC = 7.0 A IC = 7.0 A, IB = 1.75 A IC = 7.0 A, IB = 1.75 A VCE = 10 V, IC = 0.5 A, f = 0.5 MHz IC = 7.0 A, Resistance loaded IB1 = 1.75 A, IB2 = -3.5 A
Min 7
Typ
Max -2 50 1
Unit V V A mA V V MHz s s
7
12 3.0 1.5 2.1 5.0 0.5
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement
22.00.5
(1.2)
Publication date: July 2004
SJD00321AED
1
2SC6012
PC Ta
80
10
IC VCE
2.0 A 1.8 A 9 1.6 A 1.4 A
IC VBE
12
1.2 A 1.0 A 0.8 A 0.6 A 0.4 A
Collector power dissipation PC (W)
70 60 50
Collector current IC (A)
(1) TC = Ta (2) With a 100 x 100 x 2 mm Al heat sink (3) Without heat sink
VCE = 5 V 10
8 7 6 5 4 3 2
Collector current IC (A)
8
(1) 40 30 20 10 (3) 0 0 25 50 75 100 125 150
6
0.2 A
4 Ta = 120C 2 25C -40C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
(2)
1 0 0 1 2 3 4 5 6 7 8
IB = 0 A 9 10
0
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10 IC / IB = 4
100
hFE IC
VCE = 5 V
Safe operation area
100 ICP 10 IC t= 10 ms Non repetitive pulse TC = 25C t= 1 ms t= 100 s
Forward current transfer ratio hFE
1 Ta = 120C 25C 0.1 -40C
Collector current IC (A)
Ta = 120C
1
DC
10
25C
10-1
-40C
10-2
0.01 0.1
1
10
1 0.1
1
10
10-3
1
10
100
1 000
Collector current IC (A)
Collector current IC (A)
Collector-emitter voltage VCE (V)
Safe operation area (Horizontal operation)
30
fH = 64 kHz, TC < 90C A.S.O for a single pulse load caused by EHT flash over during horizontal operation.
25
Collector current IC (A)
20
15
10
5 < 1 mA 0 500 1 000 1 500 2 000
0
Collector-emitter voltage VCE (V)
2
SJD00321AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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