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 AO3401 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 specifications). AO3401L is a Green Product ordering option. AO3401 and AO3401L are electrically identical.
Features
VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON) < 50m (VGS = -10V) RDS(ON) < 65m (VGS = -4.5V) RDS(ON) < 120m (VGS = -2.5V)
TO-236 (SOT-23) Top View G D S G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation A TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient C Maximum Junction-to-Lead TA=25C TA=70C ID IDM PD TJ, TSTG
Maximum -30 12 -4.2 -3.5 -30 1.4 1 -55 to 150
Units V V A
W C
Symbol
A A
t 10s Steady-State Steady-State
RJA RJL
Typ 65 85 43
Max 90 125 60
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO3401
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-4.2A Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, ID=-4A 7 53 80 11 -0.75 -0.7 -25 42 50 75 65 120 -1 -2.2 954 115 77 6 9.4 2 3 6.3 3.2 38.2 12 20.2 11.2 -1 Min -30 -1 -5 100 -1.3 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
gFS VSD IS
VGS=-2.5V, ID=-1A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-15V, ID=-4A
VGS=-10V, VDS=-15V, RL=3.6, RGEN=6
IF=-4A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25.00 -10V 20.00 15.00 10.00 5.00 0.00 0.00 -2.5V -4.5V -3V -ID (A) -ID(A) 6 4 2 0 1.00 2.00 3.00 4.00 5.00 0 0.5 1 1.5 2 2.5 3 -VDS (Volts) Fig 1: On-Region Characteristics 120 Normalized On-Resistance 100 RDS(ON) (m) 80 60 40 20 0.00 VGS=-2.5V VGS=-4.5V 1.8 1.6 1.4 1.2 1 0.8 2.00 4.00 6.00 8.00 10.00 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 ID=-2A -IS (A) 1.0E-01 1.0E-02 1.0E-03 1.0E-04 25C 1.0E-05 1.0E-06 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C VGS=-2.5V ID=-1A ID=-3.5A, VGS=-4.5V ID=-3.5A, VGS=-10V -VGS(Volts) Figure 2: Transfer Characteristics 125C 25C 8 10 VDS=-5V
VGS=-2V
VGS=-10V
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 190 170 150 RDS(ON) (m) 130 110 90 70 50 30 10 125C
Alpha & Omega Semiconductor, Ltd.
AO3401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 2 4 6 8 10 12 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-4A Capacitance (pF) 1400 1200 1000 800 600 400 200 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss Ciss
100.0
TJ(Max)=150C TA=25C
40 10s Power (W) 100s 1ms 0.1s 30 20 10 10s DC 10 -VDS (Volts) 100 0 0.001
TJ(Max)=150C TA=25C
-ID (Amps)
RDS(ON) 10.0 limited
1.0 1s
10ms
0.1 0.1 1
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton T
0.01 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.


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