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| FDJ1027P November 2004 FDJ1027P P-Channel 1.8V Specified PowerTrench(R) MOSFET General Description This dual P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. Features * -2.8 A, -20 V RDS(ON) = 160 m @ VGS = -4.5 V RDS(ON) = 230 m @ VGS = -2.5 V RDS(ON) = 390 m @ VGS = -1.8 V * Low gate charge, High Power and Current handling Applications * Battery management/Charger Application * Load switch capability * High performance trench technology for extremely low RDS(ON) * FLMP SC75 package: Enhanced thermal performance in industry-standard package size Bottom Drain Contact S2 S1 G1 4 5 3 2 1 Bottom Drain Contact S1 S2 G2 6 MOSFET Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) Ratings -20 8 -2.8 -12 1.5 0.9 -55 to +150 Units V V A - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) 80 5 C/W Package Marking and Ordering Information .G FDJ1027P 7'' 8mm 3000 units 2004 Fairchild Semiconductor Corporation FDJ1027P Rev C1 (W) FDJ1027P Electrical Characteristics Symbol Parameter Off Characteristics BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Test Conditions ID = -250 A Min Typ Max Units Drain-Source BreakdownVoltage VGS = 0 V, Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) -20 -13 -1 100 V mV/C A nA ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 8 V, VGS = 0 V VDS = 0 V On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = -250 A -0.4 -0.8 3 108 163 283 150 5 -1.5 V mV/C ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -2.8 A ID = -2.2 A VGS = -2.5 V, ID = -1.7 A VGS = -1.8 V, VGS = -4.5 V,ID = -2.8 A,TJ=125C VDS = -5 V, ID = -2.8 A 160 230 390 238 m gFS Forward Transconductance S Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = -10 V, f = 1.0 MHz VGS = 0 V, 290 55 29 pF pF pF m V GS = 15 mV f = 1.0 MHz 18 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, VGS = -4.5 V, ID = -1 A, RGEN = 6 8 13 13 18 16 23 23 32 4 ns ns ns ns nC nC nC VDS = -10 V, VGS = -4.5 V ID = -2.8 A, 3 0.65 0.75 Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = -1.25 A (Note 2) -1.25 -0.8 14 4 -1.2 A V ns nC IF = -2.8 A, diF/dt = 100 A/s FDJ1027P Rev C1 (W) FDJ1027P Electrical Characteristics NOTES: TA = 25C unless otherwise noted 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 80C/W when mounted on a 1in2 pad of 2 oz copper (Single Operation). b) 140C/W when mounted on a minimum pad of 2 oz copper (Single Operation). Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDJ1027P Rev C1 (W) FDJ1027P Dimensional Outline and Pad Layout Top View FDJ1027P Rev C1 (W) FDJ1027P Typical Characteristics 10 2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=-4.5V -3.5V -3.0V 2.4 VGS=-1.8V -ID, DRAIN CURRENT (A) 8 2.2 2 -2.0V -2.5V 6 1.8 1.6 1.4 1.2 1 0.8 -2.5V -3.0V -3.5V -4.0V -4.5V 4 -2.0V -1.8V 2 0 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 2 4 6 8 10 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.5 RDS(ON), ON-RESISTANCE (OHM) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = -2.8A VGS = -4.5V ID = -1.4A 0.44 0.38 0.32 TA = 125oC 0.26 0.2 0.14 TA = 25oC 0.08 1.5 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 4 TA = -55 C o 25oC 125oC VGS=0V 10 1 TA = 125oC 0.1 0.01 0.001 0.0001 25oC -55oC 3 2 1 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDJ1027P Rev C (W) FDJ1027P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -2.8A 4 VDS = -5V -15V 3 -10V 500 f = 1 MHz VGS = 0 V 400 CAPACITANCE (pF) CISS 300 2 200 COSS 1 100 CRSS 0 0 0.5 1 1.5 2 2.5 3 3.5 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 10 100s RDS(ON) LIMIT 1s DC VGS = -4.5V SINGLE PULSE RJA = 140oC/W TA = 25oC 10s 10ms 100ms 1ms 8 SINGLE PULSE RJA = 140C/W TA = 25C 6 1 4 0.1 2 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) * RJA RJA = 140 C/W o 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDJ1027P Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I14 |
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