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| v01.1202 MICROWAVE CORPORATION HMC407MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz Features Gain: 15 dB Saturated Power: +29 dBm 28% PAE Supply Voltage: +5.0 V Power Down Capability No External Matching Required 8 AMPLIFIERS - SMT Typical Applications This amplifier is ideal for use as a power amplifier for 5.0 - 7.0 GHz applications: * UNII * HiperLAN Functional Diagram General Description The HMC407MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Electrical Specifications, TA = +25 C, Vs = 5V, Vpd = 5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed Vpd = 0V/5V Vpd = 5V tON, tOFF 32 21 10 Min. Typ. 5.0 - 7.0 15 0.025 12 15 25 29 37 5.5 0.002 / 230 7 30 36 22 18 0.035 12 Max. Min. Typ. 5.6 - 6.0 15 0.025 12 15 25 29 40 5.5 0.002 / 230 7 30 18 0.035 Max. Units GHz dB dB/ C dB dB dBm dBm dBm dB mA mA ns 8 - 150 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.1202 HMC407MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz Broadband Gain & Return Loss 20 15 10 Gain vs. Temperature 20 18 16 8 AMPLIFIERS - SMT 8 - 151 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 2 3 4 5 6 GAIN (dB) S21 S11 S22 14 12 10 8 6 4 2 0 +25 C +85 C -40 C 7 8 9 10 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 +25 C -5 +85 C -40 C RETURN LOSS (dB) RETURN LOSS (dB) -5 -10 -10 -15 -15 +25 C +85 C -40 C -20 -20 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) -25 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) P1dB vs. Temperature 34 32 30 28 Psat vs. Temperature 34 32 30 28 P1dB (dBm) 26 24 22 20 18 16 14 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) +25 C +85 C -40 C Psat (dBm) 26 24 22 20 18 16 14 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) +25 C +85 C -40 C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.1202 HMC407MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz 8 AMPLIFIERS - SMT Power Compression @ 5.8 GHz 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 INPUT POWER (dBm) Output IP3 vs. Temperature 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 4 4.5 5 5.5 6 6.5 7 FREQUENCY (GHz) Pout (dBm), GAIN (dB), PAE (%) OIP3 (dBm) +25 C +85 C -40 C Pout (dBm) Gain (dB) PAE (%) 16 18 20 7.5 8 Noise Figure vs. Temperature 10 9 8 Gain & Power vs. Supply Voltage 18 17 16 15 30 29 28 27 26 25 24 23 22 21 20 5 5.25 NOISE FIGURE (dB) 7 P1dB, Psat (dBm) GAIN (dB) +25C +85C -40C 6 5 4 3 2 1 0 5 5.5 6 FREQUENCY (GHz) 6.5 7 14 13 12 11 10 9 8 4.75 Vcc SUPPLY VOLTAGE (Vdc) Reverse Isolation vs. Temperature 0 +25 C +85 C -40 C Power Down Isolation 0 -5 -10 -10 ISOLATION (dB) ISOLATION (dB) 4 4.5 5 5.5 6 6.5 7 7.5 8 -20 -15 -20 -25 -30 -30 -40 -35 -50 FREQUENCY (GHz) -40 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) 8 - 152 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.1202 HMC407MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz Gain, Power & Quiescent Supply Current vs. Vpd @ 5.8 GHz 30 250 Absolute Maximum Ratings Collector Bias Voltage (Vcc1, Vcc2) +5.5 Vdc +5.5 Vdc +20 dBm 150 C 2W 200 8 AMPLIFIERS - SMT 8 - 153 GAIN (dB), P1dB (dBm), Psat (dBm) 25 Gain P1dB Psat Icq Control Voltage (Vpd) RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) Icq (mA) 20 150 15 100 Junction Temperature Continuous Pdiss (T = 85 C) (derate 31 mW/C above 85 C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature 10 50 5 2.5 3 3.5 4 Vpd (Vdc) 4.5 5 0 32 C/W -65 to +150 C -40 to +85 C Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.1202 HMC407MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz 8 AMPLIFIERS - SMT Pin Descriptions Pin Number Function Description Interface Schematic 1 Vcc1 Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic. 2 Vpd Power control pin. For maximum power, this pin should be connected to 5.0V. A higher voltage is not recommended. For lower die current, this voltage can be reduced. 3, 6, 7 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 4 RF IN This pin is AC coupled and matched to 50 Ohms from 5.0 to 7.0 GHz. 5 RF OUT This pin is AC coupled and matched to 50 Ohms from 5.0 to 7.0 GHz. 8 Vcc2 Power supply voltage for the output amplifier stage. An external bypass capacitor of 330 pF is required. This capacitor should be placed no more than 20 mils form package lead. 8 - 154 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.1202 HMC407MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz Evaluation PCB 8 AMPLIFIERS - SMT List of Material Item J1 - J2 J3 C1 - C3 C4 U1 PCB* Description PC Mount SMA RF Connector 2 mm DC Header 330 pF Capacitor, 0603 Pkg. 2.2 F Capacitor, Tantalum HMC407MS8G Amplifier 104628 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 155 MICROWAVE CORPORATION v01.1202 HMC407MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz 8 AMPLIFIERS - SMT Application Circuit Note 1: Vcc1 and Vcc2 may be connected to a common Vcc. Note 2: C2 should be located < 0.020" from Pin 8 (Vcc2). 8 - 156 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.1202 HMC407MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz Notes: 8 AMPLIFIERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 157 |
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