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| PRELIMINARY DATA SHEET NEC's NPN SiGe NESG3031M05 HIGH FREQUENCY TRANSISTOR FEATURES * LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz * * * MAXIMUM STABLE POWER GAIN: MSG = 14.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz SiGe HBT TECHNOLOGY: USH3 process, fmax = 110 GHz M05 PACKAGE: Flat-lead 4 pin thin-type super minimold package ORDERING INFORMATION PART NUMBER NESG3031M05 NESG3031M05-T1 QUANTITY 50 pcs (Non reel) 3 kpcs/reel SUPPLYING FORM * 8 mm wide embossed taping * Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA =+25C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot Note Tj Tstg RATINGS 12.0 4.3 1.5 35 150 150 -65 to +150 UNIT V V V mA mW C C Note Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB California Eastern Laboratories NESG3031M05 ELECTRICAL CHARACHTERISTICS (TA = 25C) PARAMETER DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Insertion Power Gain Noise Figure (1) Noise Figure (2) Associated Gain (1) Associated Gain (2) Reverse Transfer Capacitance Maximum Stable Power Gain Gain 1 dB Compression Output Power 3rd Order Intermodulation Distortion Output Intercept Point |S21e|2 NF NF Ga Ga Cre Note 2 MSG Note 3 SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 2 V, IC = 6 mA - - 220 - - 300 100 100 380 nA nA - VCE = 3 V, IC = 20 mA, f = 5.8 GHz VCE = 2 V, IC = 6 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt VCB = 2 V, IE = 0 mA, f = 1 MHz VCE = 3 V, IC = 20 mA, f = 5.8 GHz VCE = 3 V, IC (set) = 20 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt VCE = 3 V, IC (set) = 20 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt 6.0 - - - 7.5 - 11.0 - - 8.5 0.95 1.1 10.0 9.5 0.15 14.0 13.0 18.0 - - 1.5 - - 0.25 - - - dB dB dB dB dB pF dB dBm dBm PO (1 dB) OIP3 Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION RANK Marking hFE Value FB T1K 220 to 380 NESG3031M05 PACKAGE DIMENSIONS (Units in mm) FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD (M05, 2012 PACKAGE 2.050.1 1.250.1 3 T1K 4 1 2.00.1 0.65 2 0.65 0.590.05 PIN CONNECTIONS 1. 2. 3. 4. Base Emitter Collector Emitter Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 0.11+0.1 -0.05 0.30+0.1 -0.05 1.30 04/05/2004 A Business Partner of NEC Compound Semiconductor Devices, Ltd. |
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