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| LAB MECHANICAL DATA Dimensions in mm (inches) 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) 2.54 0.13 (0.10 0.005) SEME 1N4149CSM SILICON EPITAXIAL PLANAR DIODE General Purpose and Switching Diode in Hermetic Ceramic Surface Mount Package for High Reliability Applications 3 2 1 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) A= 0.76 0.15 (0.03 0.006) 0.31 rad. (0.012) A 1.40 (0.055) max. 1.02 0.10 (0.04 0.004) SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 -- Anode PAD 2 -- Not Connected PAD 3 -- Cathode ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) Parameter VR VRRM IF(AV) IF IFRM IFSM Ptot Reverse Voltage Repetitive Peak Reverse Voltage Average Rectified Forward Current Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Current Power Dissipation at Tamb = 25 C t = 1s t = 1s Test Conditions Min. Typ. Max. 100 100 150 200 450 2000 500 500 Unit V V mA mA mA mA mW CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VF IR V(BR)R Cd Vfr trr Forward Voltage Reverse Current Reverse Avalanche Breakdown Voltage Capacitance Forward Recovery Voltage Reverse Recovery Time Test Conditions IF = 10mA VR = 20V VR = 20V , Tj = 150C IR = 100A IR = 5A VR = 0V , f = 1 MHz IF = 50mA , tr = 20ns IF = 10mA to IR = 60mA RL = 100 Min. Typ. Max. 1 25 50 Unit V nA A V V 100 100 4 2.5 4 pF V ns 10/99 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk |
Price & Availability of 1N4149CSM
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