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| 2SA1694 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1694 -120 -120 -6 -8 -3 80(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Audio and General Purpose (Ta=25C) 2SA1694 -10max -10max -120min 50min -1.5max 20typ 300typ V MHz pF 20.0min 4.0max 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 1.4 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=-120V VEB=-6V IC=-50mA VCE=-4V, IC=-3A IC=-3A, IB=-0.3A VCE=-12V, IE=0.5A VCB=-10V, f=1MHz External Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 Unit A A 19.90.3 V 4.0 a b o3.20.1 2 hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) -40 RL () 10 IC (A) -4 VBB1 (V) -10 VBB2 (V) 5 IB1 (A) -0.4 IB2 (A) 0.4 ton (s) 0.14typ tstg (s) 1.40typ tf (s) 0.21typ Weight : Approx 6.0g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) -8 50 VCE( s a t ) - IB Characteristics (Typical) -3 Collector-Emitter Saturation Voltage V C E (s at)( V ) I C - V BE Temperature Characteristics (Typical) -8 (V CE= -4V) -3 -2 0 0m m A -1 5 A 0m -100 mA A Collector Current I C( A) -6 -7 5m A Collector Current I C (A) -6 -2 -50mA -4 -4 mp) e Te mp) e Te (Cas -25mA Cas -1 IC=-8A -4A -2A 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 Base Current I B( A) 0 0 -1 -2 -3 -4 0 0 -0.5 -30C 25C 125 IB=-10mA C ( -2 -2 (Cas -1.0 e Te mp) -1.5 Collector-Emitter Voltage V C E( V) Base-Emittor Voltage V B E( V) h FE - I C Characteristics (Typical) (V C E= -4V) 200 D C Cur r ent Gai n h F E h FE - I C Temperature Characteristics (Typical) (V C E= -4V) 300 DC Curr ent Gain h FE j-a - t Characteristics j-a(C/W) Transient Thermal Resistance 3 Typ 100 125C 25C 100 -30C 1 50 50 0.5 30 -0.02 -0.1 -0.5 -1 -5 -8 30 -0.02 -0.1 -0.5 -1 -5 -8 0.3 1 10 Time t(ms) 100 1000 Collector Current I C( A) Collector Current I C( A) f T - IE Characteristics (Typical) (V C E= -12V) 30 -20 Safe Operating Area (Single Pulse) 80 10 m s P c - T a Derating Typ 20 Co lle ctor Cu rren t I C( A) -5 DC Maxim um Power Dissip ation P C( W) -10 Cut- off F req uency f T( MH Z) 100ms 60 W ith In fin ite he 40 at si -1 nk 10 -0.5 Without Heatsink Natural Cooling 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 5 8 -0.1 -5 -10 -50 -100 -200 3.5 0 0 25 50 75 100 12 5 150 Emitter Current I E( A) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 28 |
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