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| Transistor 2SC4417 Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit: mm 2.10.1 s Features q q q 0.425 1.250.1 0.425 High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.00.2 1.30.1 0.65 3 2 0.90.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 45 35 4 50 150 150 -55 ~ +150 Unit V V V mA mW C C 0.70.1 0 to 0.1 0.20.1 1:Base 2:Emitter 3:Collector EIAJ:SC-70 S-Mini Type Package Marking symbol : 2Z s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Common emitter reverse transfer capacitance (Ta=25C) Symbol ICEO VCBO VCEO VEBO hFE VCE(sat) fT Cre Conditions VCE = 20V, IB = 0 IC = 10A, IE = 0 IE = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 10V, IE = -10mA IC = 20mA, IB = 2mA VCB = 10V, IE = -10mA, f = 200MHz VCB = 10V, IE = -1mA, f = 10.7MHz 500 1.5 45 35 4 20 50 100 0.5 V MHz pF min typ max 10 Unit A V V V 0.15-0.05 +0.1 s Absolute Maximum Ratings (Ta=25C) 0.2 0.3-0 +0.1 1 Transistor PC -- Ta 240 80 70 200 2SC4417 IC -- VCE 60 25C IB=2.0mA 1.8mA 1.6mA 50 40 30 20 10 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA 0 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0 50 VCE=10V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 60 160 Collector current IC (mA) Ta=75C 40 -25C 120 30 80 20 40 10 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 -25C Ta=75C IC/IB=10 120 hFE -- IC 600 VCE=10V VCB=10V Ta=25C fT -- I E Forward current transfer ratio hFE 100 Transition frequency fT (MHz) 10 30 100 500 80 Ta=75C 60 25C 40 -25C 400 300 200 20 100 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25C Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 2.4 IC=1mA f=10.7MHz Ta=25C 3.0 2.5 2.0 2.0 1.6 1.5 1.2 1.0 0.8 0.5 0.4 0 1 3 10 30 100 0 1 3 10 30 100 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 |
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