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DISCRETE SEMICONDUCTORS
DATA SHEET
BFM505 Dual NPN wideband transistor
Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 1996 Oct 08
Philips Semiconductors
Product specification
Dual NPN wideband transistor
FEATURES * Small size * Temperature and hFE matched * Low noise and high gain * High gain at low current and low capacitance at low voltage * Gold metallization ensures excellent reliability. APPLICATIONS * Oscillator and buffer amplifiers * Balanced amplifiers * LNA/mixer.
b1 6
handbook, halfpage
BFM505
PINNING - SOT363A PIN 1 2 3 4 5 6 SYMBOL b1 e1 c2 b2 e2 c1 base 1 emitter 1 collector 2 base 2 emitter 2 collector 1 DESCRIPTION
5
4 c1 b2 e1 e2
MAM210
c2
DESCRIPTION Dual transistor with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. The transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. - - 14 - - - -
1 2 3 Top view Marking code: N0.
Fig.1 Simplified outline and symbol.
TYP.
MAX. - - - - 1.6 230 115
UNIT
Any single transistor Cre fT s 21 GUM F Rth j-s
2
feedback capacitance transition frequency insertion power gain maximum unilateral power gain noise figure thermal resistance from junction to soldering point
Ie = 0; VCB = 3 V; f = 1 MHz IC = 5 mA; VCE = 3V; f = 1 GHz IC = 5 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 C IC = 5 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 C IC = 1 mA; VCE = 3 V; f = 900 MHz; S = opt single loaded double loaded
0.22 9 15 17 1.1 - -
pF GHz dB dB dB K/W K/W
1996 Oct 08
2
Philips Semiconductors
Product specification
Dual NPN wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System IEC 134. SYMBOL PARAMETER CONDITIONS MIN. - - - - up to Ts = 118 C; note 1 - -65 -
BFM505
MAX.
UNIT
Any single transistor VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature open emitter open base open collector 20 8 2.5 18 500 +175 175 V V V mA mW C C
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point; note 1 single loaded double loaded CONDITIONS VALUE 230 115 UNIT K/W K/W
Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin.
1996 Oct 08
3
Philips Semiconductors
Product specification
Dual NPN wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IC = 2.5 A; IE = 0 IE = 2.5 A; IC = 0 VCB = 6 V; IE = 0 IC = 5 mA; VCE = 6 V IC1 = IC2 = 5 mA; VCE1 = VCE2 = 6 V IE1 = IE2 = 10 mA; Tamb = 25 C MIN. TYP. - - - - 120
BFM505
MAX. - - - 50 250 - -
UNIT
DC characteristics of any single transistor V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE hFE VBEO collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain 20 8 2.5 - 60 V V V nA collector-emitter breakdown voltage IC = 10 A; IB = 0
DC characteristics of the dual transistor ratio of highest and lowest DC current gain difference between highest and lowest base-emitter voltage (offset voltage) 1 0 1.2 1
mV
AC characteristics of any single transistor fT Cc Cre GUM transition frequency collector capacitance feedback capacitance maximum unilateral power gain; note 1 IC = 5 mA; VCE = 3 V; f = 1 GHz IE = ie = 0; VCB = 3 V; f = 1 MHz IC = 0; VCB = 3 V; f = 1 MHz IC = 5 mA; VCE = 3 V; Tamb = 25 C; f = 900 MHz IC = 5 mA; VCE = 3 V; Tamb = 25 C; f = 2 GHz s 21 F
2
- - - - - 14 - - -
9 0.31 0.22 17 10 15 1.4 1.9 1.1
- - - - - - 1.8 - 1.6
GHz pF pF dB dB dB dB dB dB
insertion power gain noise figure
IC = 5 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 C IC = 5 mA; VCE = 3 V; f = 900 MHz; S = opt IC = 5 mA; VCE = 3 V; f = 2 GHz; S = opt IC = 1 mA; VCE = 3 V; f = 900 MHz; S = opt
Note
s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------------ dB ( 1 - s 11 2 ) ( 1 - s 22 2 )
1996 Oct 08
4
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
handbook, halfpage
600
MBG208
handbook, halfpage
12
MGD687
Ptot (mW) 400
double loaded
fT (GHz)
VCE = 6V
8 3V single loaded
200
4
0 0 50 100 150 Ts (oC) 200
0 10-1
1
IC (mA)
10
f = 1 GHz; Tamb = 25 C.
Fig.2
Power derating as a function of soldering point temperature; typical values.
Fig.3
Transition frequency as a function of collector current; typical values.
handbook, halfpage
250
MRA719
handbook, halfpage
0.4
MRA720
hFE 200
Cre (pF) 0.3
150 0.2 100 0.1 50
0 10-3
0 10-2 10-1 1 10 102 IC (mA) 0 2 4 6 8 10 VCB (V)
VCE = 6 V.
IC = 0; f = 1 MHz.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Feedback capacitance as a function of collector-base voltage; typical values.
1996 Oct 08
5
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
handbook, halfpage
20
MGG199
handbook, halfpage
20
MGG200
gain (dB) 16
GUM
gain (dB) 16
12 MSG
12
MSG/Gmax GUM
8
8
4
4
0 0 4 8 IC (mA) 12
0 0 4 8 IC (mA) 12
f = 900 MHz; VCE = 3 V.
f = 2 GHz; VCE = 3 V.
Fig.6
Gain as a function of collector current; typical values.
Fig.7
Gain as a function of collector current; typical values.
MGG201
handbook, halfpage
50
handbook, halfpage
50
MGG202
gain (dB) 40 GUM 30 MSG/Gmax
gain (dB) 40 GUM
30 MSG/Gmax
20
20
10
10
0 10
102
103
f (MHz)
104
0 10
102
103
f (MHz)
104
IC = 1 mA; VCE = 3 V.
IC = 5 mA; VCE = 3 V.
Fig.8
Gain as a function of frequency; typical values.
Fig.9
Gain as a function of frequency; typical values.
1996 Oct 08
6
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
handbook, halfpage
5
MGC766
F (dB)
handbook, halfpage
20
MGD686
Gass (dB) 15
4
f = 900 MHz
1GHz 3 10 2 GHz 2 5 2000 MHz 1000 MHz 900 MHz 500 MHz
1
0
0 10-1 1 IC (mA) 10
-5
10-1
1
IC (mA)
10
VCE = 3 V.
VCE = 3 V.
Fig.10 Minimum noise figure as a function of collector current; typical values.
Fig.11 Associated available gain as a function of collector current; typical values.
handbook, halfpage
5
MGC768
F (dB)
handbook, halfpage
20
MGC769
Gass (dB)
IC = 1.25 mA 15
5 mA
4
3
10
2 5 mA 1 1.25 mA 0 102 103 f (MHz) 104
5
0
-5 102 103 f (MHz) 104
VCE = 3 V.
VCE = 3 V.
Fig.12 Minimum noise figure as a function of frequency; typical values.
Fig.13 Associated available gain as a function of frequency; typical values.
1996 Oct 08
7
Philips Semiconductors
Product specification
Dual NPN wideband transistor
APPLICATION INFORMATION SPICE parameters for any single BFM505 die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 Note 1. These parameters have not been extracted, the default values are shown. 1996 Oct 08 8 PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC VALUE 134.1 180.0 0.988 38.34 150.0 27.81 2.051 55.19 0.982 2.459 2.920 17.45 1.062 20.00 1.000 20.00 1.171 4.350 0.000 1.110 3.000 284.7 600.0 0.303 7.037 12.34 1.701 30.64 0.000 242.4 188.6 0.041 0.130 1.332 0.000 750.0 0.000 0.897 UNIT aA - - V mA fA - - - V mA aA - A - eV - fF mV - ps - V mA deg fF mV - - ns F mV - -
handbook, halfpage
BFM505
C1
C2
LP
LP
B1
LB
T1
T2
LB
B2
LE
LE
E1
E2
MBG188
Fig.14 Package equivalent circuit SOT363A (inductance only).
Lead inductances (nH)
LP LB LE
0.4 0.6 1.0
E2
3 27 1 3 48
B1
E1
6 27 17 36
E2
B2
3 36 17
E1
C2
48 3
B2
C1
6
MBG189
C2
Fig.15 Package capacitance (fF) between indicated nodes.
Philips Semiconductors
Product specification
Dual NPN wideband transistor
PACKAGE OUTLINE
BFM505
handbook, full pagewidth
0.2 1.1 0.8 0.9 0.6 0.1 0.0 0.25 0.10
0.3 0.1 A 1.35 1.15 0.2 M B B
0.65
1
6 0.3 0.2 (6x) 2.2 1.8
0.65
2
5
3 2.2 2.0
4
MSA368
0.2 M A
Dimensions in mm.
Fig.16 SOT363.
1996 Oct 08
9
Philips Semiconductors
Product specification
Dual NPN wideband transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
BFM505
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Oct 08
10

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