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| Philips Semiconductors Product specification Dual rectifier diodes ultrafast FEATURES * Low forward volt drop * Fast switching * Soft recovery characteristic * High thermal cycling performance * Low thermal resistance BYT28 series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V a1 1 k2 a2 3 VF 1.05 V IO(AV) = 10 A trr 60 ns SOT78 (TO220AB) GENERAL DESCRIPTION Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYT28 series is supplied in the conventional leaded SOT78 (TO220AB) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VR IO(AV) IFSM PARAMETER CONDITIONS BYT28 Repetitive peak reverse voltage Continuous reverse voltage Tmb 147C Average rectified output current (both diodes conducting)1 Non-repetitive peak forward current per diode. Storage temperature Operating junction temperature square wave; = 0.5; Tmb 115 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) -40 MIN. -300 300 300 MAX. -400 400 400 10 50 55 150 150 -500 500 500 UNIT V V A A A C C Tstg Tj THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air. MIN. TYP. 60 MAX. 4.5 3.0 UNIT K/W K/W K/W 1 Neglecting switching and reverse current losses. October 1998 1 Rev 1.400 Philips Semiconductors Product specification Dual rectifier diodes ultrafast ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 C unless otherwise stated SYMBOL VF IR Qs trr Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 5 A; Tj = 150C IF = 10 A VR = VRRM VR = VRRM; Tj = 100 C IF = 2 A to VR 30 V; dIF/dt = 20 A/s IF = 1 A to VR 30 V; dIF/dt = 100 A/s IF = 5 A to VR 30 V; dIF/dt = 50 A/s; Tj = 100C IF = 1 A; dIF/dt = 10 A/s MIN. - BYT28 series TYP. 0.95 1.30 2.0 10 50 50 2.0 2.5 MAX. 1.05 1.40 10 200 60 60 3.0 - UNIT V V A A nC ns A V I dI F dt F 9 8 7 PF / W Vo = 0.945 V Rs = 0.021 Ohms BYT28 Tmb(max) / C D = 1.0 109.5 114 118.5 t rr time 6 5 4 0.1 3 0.2 0.5 123 127.5 132 Q I R I s 10% 100% I tp 2 1 T tp D= T t 136.5 141 145.5 150 8 rrm 0 0 1 2 3 4 IF(AV) / A 5 6 7 Fig.1. Definition of trr, Qs and Irrm Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square wave where IF(AV) =IF(RMS) x D. PF / W Vo = 0.945 V Rs = 0.021 Ohms I F 6 5 BYT28 Tmb(max) / C a = 1.57 1.9 2.2 123 127.5 132 4 2.8 time VF V VF time fr 3 2 1 0 4 136.5 141 145.5 150 5 0 1 2 IF(AV) / A 3 4 Fig.2. Definition of Vfr Fig.4. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). October 1998 2 Rev 1.400 Philips Semiconductors Product specification Dual rectifier diodes ultrafast BYT28 series 1000 trr / ns 1000 Qs / nC IF=5 A 100 1A 100 5A IF = 2 A 10 Tj = 25 C Tj = 100 C 1 1 10 dIF/dt (A/us) 100 10 1 1.0 10 -dIF/dt (A/us) 100 Fig.5. Maximum trr at Tj = 25C and 100C; per diode Fig.8. Maximum Qs at Tj = 25C; per diode. 10 Irrm / A 10 Transient thermal impedance, Zth j-mb (K/W) IF= 5 A 1 1 IF=1A 0.1 0.1 0.01 P D tp D= tp T t Tj = 25 C Tj = 100 C 0.01 1 10 -dIF/dt (A/us) 100 0.001 1us 10us T 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYQ28E 10s Fig.6. Maximum Irrm at Tj = 25C and 100C; per diode. Fig.9. Transient thermal impedance per diode Zth = f(tp) 15 IF / A Tj=150C Tj=25C BYQ28 10 5 typ max 0 0 0.5 VF / V 1 1.5 Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1998 3 Rev 1.400 Philips Semiconductors Product specification Dual rectifier diodes ultrafast MECHANICAL DATA Dimensions in mm Net Mass: 2 g BYT28 series 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.10. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1998 4 Rev 1.400 Philips Semiconductors Product specification Dual rectifier diodes ultrafast DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYT28 series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1998 5 Rev 1.400 |
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