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| PD -91648C PRELIMINARY IRF7524D1 8 FETKYTM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET(R) Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint A A S G 1 K K D D 2 7 VDSS = -20V RDS(on) = 0.27 Schottky Vf = 0.39V 3 6 4 5 Description T op V ie w The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. The new Micro8 package, with half the footprint area of the standard SO-8, provides TM the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. TM Micro8 TM Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Maximum -1.7 -1.4 -14 1.25 0.8 10 12 -5.0 -55 to +150 Units A W mW/C V V/ns C Thermal Resistance Ratings Parameter RJA Junction-to-Ambient Maximum 100 Units C/W Notes: Repetitive rating - pulse width limited by max. junction temperature (see Fig. 9) ISD -1.2A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s - duty cycle 2% When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance www.irf.com 1 01/29/99 IRF7524D1 MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Continuous Source Current(Body Diode) Pulsed Source Current (Body Diode) Body Diode Forward Voltage Reverse Recovery Time (Body Diode) Reverse Recovery Charge Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Min. -20 --- --- -0.70 1.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Min. --- --- --- --- --- Typ. --- 0.17 0.28 --- --- --- --- --- --- 5.4 0.96 2.4 9.1 35 38 43 240 130 64 Typ. --- --- --- 52 63 Max. Units Conditions --- V VGS = 0V, ID = -250A 0.27 VGS = -4.5V, ID = -1.2A 0.40 VGS = -2.7V, ID = -0.60A --- V VDS = VGS, I D = -250A --- S VDS = -10V, I D = -0.60A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, T J = 125C -100 VGS = -12V nA 100 VGS = 12V 8.2 ID = -1.2A 1.4 nC VDS = -16V 3.6 VGS = -4.5V, See Fig. 6 --- VDD = -10V --- ID = -1.2A ns --- RG = 6.0 --- RD = 8.3, --- VGS = 0V --- pF VDS = -15V --- = 1.0MHz, See Fig. 5 Max. Units Conditions -1.25 A -9.6 -1.2 V TJ = 25C, IS = -1.2A, VGS = 0V 78 ns TJ = 25C, I F = -1.2A 95 nC di/dt = 100A/s Conditions 50% Duty Cycle. Rectangular Wave, TA = 25C TA = 70C See Fig.14 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with VRRM applied Conditions IF = 1.0A, TJ = 25C IF = 2.0A, TJ = 25C IF = 1.0A, TJ = 125C IF = 2.0A, TJ = 125C . VR = 20V TJ = 25C TJ = 125C VR = 5Vdc ( 100kHz to 1 MHz) 25C Rated VR MOSFET Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Schottky Diode Maximum Ratings IF(av) I SM Max. Units 1.9 A 1.4 120 11 A Schottky Diode Electrical Specifications VFM Parameter Max. Forward voltage drop Max. Units 0.50 0.62 V 0.39 0.57 0.02 mA 8 92 pF 3600 V/ s IRM Ct dv/dt Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) 2 www.irf.com IRF7524D1 Power Mosfet Characteristics 10 10 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 1 1 0.1 0.1 -1.50V -1.50V 0.01 0.1 20s PULSE WIDTH TJ = 25 C 1 10 0.01 0.1 1 20s PULSE WIDTH TJ = 150 C 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.0 -I D , D rain-to-S ource C urrent (A) T J = 2 5 C T J = 1 5 0 C 1 R D S (on ) , D rain-to-S ource O n R esistance (N orm alized) I D = -1.2 A 1.5 1.0 0.1 0.5 0.01 1.5 2.0 2.5 3.0 V D S = -1 0 V 2 0 s P U L S E W ID T H 3.5 4.0 4.5 5.0 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = -4.5 V 100 120 140 160 A -VG S , G a te -to -S o u rc e V o lta g e (V ) T J , Junction T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7524D1 Power Mosfet Characteristics 500 400 -V G S , G ate-to-S ource V oltage (V ) V GS C iss C rs s C o ss = = = = 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d 10 I D = -1 .2 A V D S = -1 6V 8 C , Capacitance (pF) C iss 300 C oss 200 6 4 C rss 100 2 0 1 10 100 A 0 0 2 4 FO R TE S T CIR C U IT S E E FIG U R E 9 6 8 10 A -VD S , D rain-to-S ourc e V oltage (V ) Q G , Total G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 100 -I S D , Reverse D rain Current (A ) O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n) T J = 15 0C 1 -I D , D rain C urrent (A) 10 100s T J = 2 5C 1m s 1 10m s 0.1 0.01 0.4 0.6 0.8 1.0 V G S = 0V A 1.2 0.1 1 T A = 25 C T J = 15 0C S ing le P u lse 10 100 A -VS D , S ourc e-to-D rain V oltage (V ) -V D S , D rain-to-S ourc e V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7524D1 Power Mosfet Characteristics 1000 Thermal Response (Z thJC ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.1 1 10 100 P DM t1 t2 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient R DS (on), Drain-to-Source OnOn Resistance () RDS (on) , Drain-to-Source Resistance 0.8 R DS (on), Drain-to-Source OnOn Resistance () RDS (on) , Drain-to-Source Resistance 1.0 0.300 0.250 0.6 VGS = -2.5V 0.4 ID = -1.7A 0.200 VGS = -5.0V 0.2 0.150 0.0 0.0 0.5 1.0 1.5 2.0 0.100 2 3 4 5 6 7 8 -I D , Drain Current (A) -VGS , Gate-to-Source Voltage (V) Fig 10. Typical On-Resistance Vs. Drain Current Fig 11. Typical On-Resistance Vs. Gate Voltage www.irf.com 5 IRF7524D1 Schottky Diode Characteristics 10 100 10 TJ = 150C 125C Reverse Current - IR (mA) 1 100C 75C 50C 0.1 0.01 25C 0.001 In sta ntane ous Fo rw a rd C urre nt - I F (A) 0.0001 0 4 8 12 16 20 ) Reverse Voltage - V R (V) 1 T J = 1 50C T J = 1 25C Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage A llo w ab le A m b ie nt T em p era tu re - (C ) T J = 2 5C 160 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 D D D D D = 3/4 = 1/2 = 1/3 = 1/4 = 1/5 DC V r = 20V R t h JA = 100C /W Square wave 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage D ro F orwa rd V oltage Dropp -- VFF(V) (V ) VM A Fig. 12 -Typical Forward Voltage Drop Characteristics A v e ra g e F o rw a rd C u rren t - I F(AV ) (A ) Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current 6 www.irf.com IRF7524D1 Micro8TM Package Details LE AD A SSIGN M EN TS D -B3 DDDD 8765 3 E -A1234 SSSG S 1 G 1 S2 G 2 8765 H 0.2 5 (.010) M A M S IN G LE 1234 D UAL 1234 D1 D1 D2 D2 8765 D IM A A1 B C D e e1 E H L INC H ES M IN .0 36 .0 04 .0 10 .005 .116 M AX .044 .008 .014 .007 .120 M ILLIME TE RS MIN 0 .91 0 .10 0 .25 0.13 2.95 M AX 1.11 0.20 0.36 0.18 3.05 .0256 B ASIC .0128 B ASIC .1 16 .188 .016 0 .120 .198 .026 6 0.65 BAS IC 0.33 BAS IC 2.95 4.78 0.4 1 0 3.0 5 5.03 0.66 6 e 6X e1 A -CB 8X 0.0 8 (.0 03) M A1 C AS BS 0.10 (.004) L 8X C 8X RE C OM M E ND ED F O O TP RIN T 1.04 ( .0 41 ) 8X 0.38 8X ( .015 ) 3.2 0 ( .126 ) 4.2 4 5.2 8 ( .167 ) ( .2 08 ) N O TE S : 1 DIME N S ION IN G A N D T O L E RA N C IN G P E R A N S I Y 1 4 .5M -1 9 8 2 . 2 CO N T R OL L IN G DIME N S ION : INC H . 3 DIME N S ION S D O N O T INC L U D E M O L D F L A S H . 0.65 6X ( .02 56 ) Part Marking www.irf.com 7 IRF7524D1 Micro8TM Tape & Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E ED D IR E C TIO N N OTES: 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 33 0.0 0 ( 12 .9 9 2 ) M AX. 1 4 .4 0 ( .5 6 6 ) 1 2 .4 0 ( .4 8 8 ) NO TES : 1 . C O N T R O LL IN G D IM E N S IO N : M IL L IM E T ER . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice . 01/99 8 www.irf.com |
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