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| IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Switchmode Series NPN Silicon Power Transistor Designer'sTM Data Sheet SEMICONDUCTOR TECHNICAL DATA MOTOROLA SWITCHMODE is a trademark of Motorola, Inc. Features: * High VCEV Capability (1800 Volts) * Low Saturation Voltage * 100_C Performance Specified for: Reverse-Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents This transistor is designed for high-voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for line-operated switchmode applications. Typical Applications: * Fluorescent Lamp Ballasts * Inverters * Solenoid and Relay Drivers * Motor Controls * Deflection Circuits THERMAL CHARACTERISTICS MAXIMUM RATINGS Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C Base Current -- Continuous Peak(1) Collector Current -- Continuous Peak(1) Emitter Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Characteristic Rating v 10%. VCEO(sus) Symbol Symbol TJ, Tstg VCEV RJC VEB IC ICM IB IBM PD TL - 65 to + 150 Value 1800 1.56 Max 80 32 0.64 275 900 1.5 2.5 POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS 2 5 9 MJE1320 CASE 221A-06 TO-220AB Order this document by MJE1320/D Watts W/_C _C/W Unit Unit Adc Adc Vdc Vdc Vdc _C _C 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I II I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I III I I I I IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I 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IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJE1320 (1) Pulse Test: Pulse Width = 300 s. Duty Cycle SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS(1) SECOND BREAKDOWN OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Fall Time Crossover Time Storage Time Crossover Time Storage Time Inductive Load, Clamped (Table 2) Fall Time Storage Time Rise Time Delay Time Resistive Load (Table 1) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) Base-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.5 Adc) (IC = 2 Adc, IB = 1 Adc) (IC = 1 Adc, IB = 0.5 Adc, TC = 100_C) Collector-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.5 Adc) (IC = 2 Adc, IB = 1 Adc) (IC = 1 Adc, IB = 0.5 Adc, TC = 100_C) DC Current Gain (VCE = 5 Vdc) Clamped Inductive SOA with Base Reverse Biased Second Breakdown Collector Current with base forward biased Emitter Cutoff Current (VEB = 9 Vdc, IC = 0) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) Collector-Emitter Sustaining Voltage (IC = 50 mA, IB = 0) 2 IC = 1 A, Vclamp = 400 Vdc, VBE(off) = 2 Vdc, IB1 = 0.5 Adc VCC = 250 Vdc, IC = 1 A IB1 = IB2 = 0.5 Adc 2% tp = 25 s, Duty Cycle Characteristic v v 2%. TC = 100_C _C TC = 25_C IC = 2 Adc IC = 1 Adc VCEO(sus) VCE(sat) VBE(sat) Symbol RBSOA Motorola Bipolar Power Transistor Device Data IEBO ICEV Cob hFE IS/b tsv tsv td tc ts tr tf tc Min 900 2.5 3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.2 0.9 0.15 0.18 0.3 0.3 Typ See Figure 14 See Figure 13 3.5 3.7 2.2 2.8 0.8 0.8 0.1 4.5 7 80 -- -- -- -- 4 10.5 0.25 0.25 2.5 Max 1.5 2.8 1.5 1 2.5 1.5 -- -- -- -- -- -- -- -- -- -- 10 mAdc mAdc Unit Vdc Vdc Vdc pF s s s s s s s s -- -- MJE1320 TYPICAL STATIC CHARACTERISTICS VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 70 50 hFE, DC CURRENT GAIN 30 20 10 7 5 3 2 1 0.05 0.07 0.1 TC = 100C 25C VCE = 5 V 2.8 2.4 IC = 1 A 2 1.6 1.2 0.8 0.4 0 0.1 0.2 0.3 0.5 0.7 1 2 IB, BASE CURRENT (AMP) 5 7 10 TJ = 25C 2 A 2.5 A 2 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMPS) 3 5 Figure 1. DC Current Gain Figure 2. Collector Saturation Region VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2 VBE, BASE-EMITTER VOLTAGE (VOLTS) 1.3 1.1 IC/IB = 2 TJ = 25C 1.6 IC/IB = 2 1.2 0.9 0.8 TJ = 100C 0.7 100C 0.4 25C 0 0.25 0.3 0.4 0.5 0.7 1 1.5 2 2.5 0.5 0.3 0.25 0.3 0.4 0.5 0.7 1 1.5 2 2.5 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10K VCE = 250 V IC, COLLECTOR CURRENT ( A) 1K C, CAPACITANCE (pF) TJ = 150C 125C 100C 75C 10 25C 1 REVERSE 0.1 - 0.4 FORWARD + 0.6 10K 5K 3K 2K 1K 500 300 200 100 50 30 20 10 0.2 0.3 0.5 Cob Cib f = 1 MHz TJ = 25C 100 0 - 0.2 + 0.2 + 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 1 2 3 5 10 20 30 50 100 200 VR, REVERSE VOLTAGE (VOLTS) 500 1K 2K Figure 5. Collector Cutoff Region Figure 6. Capacitance Variation Motorola Bipolar Power Transistor Device Data 3 MJE1320 TYPICAL DYNAMIC CHARACTERISTICS IC pk 90% VCE(pk) IC tsv trv 10 VCE(pk) t SV, STORAGE TIME (s) 90% IC(pk) tfi tti 7 5 3 2 TJ = 100C IC/IB1 = 2 1 0.7 TIME 0.5 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMPS) 5 6 VBE(off) = 1 V 2V 3V VCE IB 90% IB1 tc 10% VCE(pk) 10% IC pk 2% IC Figure 7. Inductive Switching Measurements 6 5 TC, CROSSOVER TIME ( s) VBE(off) = 3 V 3 2 2V 1V t fi , FALL TIME ( s) 3 2 6 5 Figure 8. Inductive Storage Time VBE(off) = 3 V 2V 1V 1 0.7 0.5 0.3 0.3 1 0.7 0.5 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMPS) 5 6 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMPS) 5 6 Figure 9. Inductive Crossover Time td and tr Table 1. Resistive Load Switching Figure 10. Inductive Fall Time ts and tf 20 100 2N6191 10 F H.P. 214 OR EQUIV. P.G. 50 500 1 F 100 -V 0V A 50 *IB +V -5 V T.U.T. *IC VCC RL + 0.02 F 0.02 F RB1 A RB2 2N5337 + Vdc 11 Vdc 0V H.P. 214 OR EQUIV. P.G. - 35 V *IC *IB T.U.T. RB = 22 50 RL VCC Vin 0V 11 V tr 15 ns VCC = 250 Vdc RL = 250 IC = 1 Adc IB = 0.5 Adc *Tektronix AM503 *P6302 or Equivalent VCC = 250 Vdc IB1 = 0.5 Adc RB1 = 22 RL = 250 IB2 = 0.5 Adc RB2 = 10 IC = 1 Adc For VBE(off) = 5 V RB2 = 0 Note: Adjust - V to obtain desired VBE(off) at Point A. 4 Motorola Bipolar Power Transistor Device Data MJE1320 Table 2. Inductive Load Switching 0.02 F H.P. 214 OR EQUIV. P.G. 0 - 35 V 0.02 F 50 500 T1 0V -V A T1 T.U.T. MR856 Lcoil (ICpk) VCC *IB 50 Vclamp VCC IB RBSOA L = 1.1 mH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 IB2 IB1 +V IC *IC L VCE VCE(pk) 1 F +- 100 -V IC(pk) RB2 2N5337 + - + V 11 V 100 2N6191 20 10 F RB1 A [ T1 adjusted to obtain IC(pk) V(BR)CEO L = 10 mH RB2 = VCC = 20 Volts Inductive Switching L = 1.1 mH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 Scope -- Tektronix 7403 or Equivalent R *Tektronix *P-6042 or *Equivalent Note: Adjust - V to obtain desired VBE(off) at Point A. SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 11. T J(pk) may be calculated from the data in Figure 14. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base-to-emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives the RBSOA characteristics. Motorola Bipolar Power Transistor Device Data 5 MJE1320 GUARANTEED SAFE OPERATING AREA 1 SECOND BREAKDOWN DERATING IC, COLLECTOR CURRENT (AMPS) 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0 20 0.01 40 60 80 100 120 140 160 1 TC, CASE TEMPERATURE (C) 100 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 900 WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TC = 25C dc 10 s 5 ms POWER DERATING FACTOR 0.8 0.6 THERMAL DERATING 0.4 0.2 Figure 11. Power Derating Figure 12. Maximum Rated Forward Bias Safe Operating Area 5 IC, COLLECTOR CURRENT (AMPS) 4 IC/IB = 1 TJ 100C VBE(off) = 2 V 3 2 IC/IB = 2 1 0 0 600 900 1200 1500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1800 Figure 13. Maximum Rated Reverse Bias Safe Operating Area r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 ZJC(t) = r(t) RJC RJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC 1 10 t, TIME (ms) P(pk) 0.01 0.01 0.01 SINGLE PULSE 0.1 t2 DUTY CYCLE, D = t1/t2 100 1K t1 Figure 14. Thermal Response 6 Motorola Bipolar Power Transistor Device Data MJE1320 PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 7 MJE1320 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 8 Motorola Bipolar Power Transistor Device Data *MJE1320/D* MJE1320/D |
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