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| RB500V-40 Diodes Schottky barrier diode RB500V-40 !Applications Low current rectification !External dimensions (Units : mm) CATHODE MARK CATHODE MARK !Features 1) Small surface mounting type. (UMD2) 2) Low IR. (IR=70nA Typ.) 3) High reliability. 2.50.2 1.70.1 2.50.2 1.70.1 2 0.30.05 1.250.1 0.7 +0.2 -0.1 0.1 +0.1 -0.05 2 0.30.05 1.250.1 0.7 +0.2 -0.1 0.1 +0.1 -0.05 !Construction Silicon epitaxial planar ROHM : UMD2 EIAJ : SC-76 JEDEC : SOD-323 There are two different markings. !Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature 60Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Limits 45 40 0.1 1 125 -40~+125 Unit V V A A C C !Electrical characteristics (Ta = 25C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT Min. - - - Typ. - - 6.0 Max. 0.45 1 - Unit V A pF IF=10mA VR=10V VR=10V, f=1MHz Conditions Note) ESD sensitive product handling required. RB500V-40 Diodes !Electrical characteristic curves (Ta = 25C) CAPACITANCE BETWEEN TERMINALS : CT (pF) 1000 10000 REVERSE CURRENT : R (A) 100 FORWARD CURRENT : IF (mA) 1000 100 10 1 25C 125C 100 10 12 5 C 75 C 75C 10 C 25 1 -25 C 0.1 0.01 0 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 20 30 40 1 0 5 10 15 20 25 30 35 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 100 Io CURRENT (%) 80 60 40 20 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (C) Fig. 4 Derating curve (mounting on glass epoxy PCBs) |
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