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Power Transistors
2SC4420
Silicon NPN triple diffusion planar type
Unit: mm
For high breakdown voltage high-speed switching
(0.7)
15.00.3 11.00.2
5.00.2 (3.2)
I Features
* High-speed switching * High collector to base voltage VCBO * Wide area of safe operation (ASO) * Satisfactory linearity of forward current transfer ratio hFE * Full-pack package which can be installed to the heat sink with one screw
21.00.5 15.00.2
3.20.1
16.20.5 (3.5) Solder Dip
2.00.2 1.10.1
2.00.1 0.60.2
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25C Ta = 25C Tj Tstg VEBO ICP IC IB PC Rating 900 900 800 7 5 3 1 70 3 150 -55 to +150 C C Unit V V V V A A A W
1
5.450.3 10.90.5 2 3
1 : Base 2 : Collector 3 : Emitter EIAJ : SC-96 TOP-3F-A Package
Junction temperature Storage temperature
I Electrical Characteristics TC = 25C
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Symbol ICBO IEBO VCEO hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 0.8 A IC = 0.8 A, IB = 0.16 A IC = 0.8 A, IB = 0.16 A VCE = 5 V, IC = 0.15 A, f = 1 MHz IC = 0.8 A, IB1 = 0.16 A, IB2 = - 0.32 A, VCC = 250 V 10 0.7 2.5 0.3 800 8 6 1.5 1.5 V V MHz s s s Min Typ Max 50 50 Unit A A V
1
2SC4420
PC T a
80 3.0 TC=25C (1) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W)
Power Transistors
IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=5 30 10 25C 3 1 0.3 0.1 0.03 0.01 0.01 0.03 -25C TC=100C
VCE(sat) IC
Collector power dissipation PC (W)
70 60 50 40 30 20 10
2.5
IB=500mA 400mA
Collector current IC (A)
2.0
300mA 200mA
1.5
1.0
100mA 50mA
(2)
0.5 (3) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
100 1000 IC/IB=5
hFE IC
VCE=5V 100
fT I C
VCE=5V f=1MHz TC=25C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
30
300
Transition frequency fT (MHz)
1 3 10
30
10
100 TC=100C 25C 10 -25C
10
3
30
3
1 T =-25C C 100C 0.3 25C
1
3
0.3
0.1 0.01 0.03
0.1
0.3
1
3
10
1 0.01 0.03
0.1
0.3
0.1 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob VCB
1000 100 IE=0 f=1MHz TC=25C 30
ton, tstg, tf IC
Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=250V TC=25C
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25C
Collector output capacitance Cob (pF)
Switching time ton,tstg,tf (s)
300
10 3
Collector current IC (A)
10 3 1
ICM IC
100
t=0.1ms
tstg 1 0.3 tf 0.1 0.03 ton
30
1ms
10
0.3 0.1 0.03 0.01
10ms
DC
3
1 1 3 10 30 100
0.01 0 0.4 0.8 1.2 1.6
1
3
10
30
100
300
1000
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Area of safe operation, reverse bias ASO
16 14 Lcoil=200H IC/IB=5 (IB1=-IB2) TC=25C
2SC4420
Reverse bias ASO measuring circuit
L coil IB1 Vin T.U.T IC
Collector current IC (A)
12 10 8 6 4 2 0 0 200 400 600 800 1000 1200 1400 1600
-IB2
VCC
tW
Vclamp
Collector to emitter voltage VCE (V)
Rth(t) t
10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink
Thermal resistance Rth(t) (C/W)
1000
100 (1) 10 (2)
1
0.1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3
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2001 MAR

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