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| Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES * 'Trench' technology * Extremely fast switching * Logic level compatible * Subminiature surface mounting package BSS123 SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 150 mA g RDS(ON) 6 (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' technology. Applications:* Relay driver * High-speed line driver * Telephone ringer The BSS123 is supplied in the SOT23 subminiature surface mounting package. PINNING PIN 1 2 3 gate source drain DESCRIPTION SOT23 3 Top view 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 C to 150C Tj = 25 C to 150C; RGS = 20 k Ta = 25 C Ta = 25 C Ta = 25 C MIN. - 55 MAX. 100 100 20 150 600 0.25 150 UNIT V V V mA mA W C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-a Thermal resistance junction to ambient CONDITIONS surface mounted on FR4 board TYP. 500 MAX. UNIT K/W August 2000 1 Rev 1.000 Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET ELECTRICAL CHARACTERISTICS Tj= 25C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) gfs IDSS IGSS ton toff Ciss Coss Crss Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance Forward transconductance CONDITIONS VGS = 0 V; ID = 10 A VDS = VGS; ID = 1 mA VGS = 10 V; ID = 120 mA VDS = 25 V; ID = 120 mA MIN. 100 1 VGS = 0 V; VDS = 25 V; f = 1 MHz - BSS123 TYP. MAX. UNIT 130 2 3.5 350 10 10 3 12 23 6 4 2.8 6 100 100 10 20 40 25 10 V V mS nA nA ns ns pF pF pF Zero gate voltage drain VDS = 60 V; VGS = 0 V current Gate source leakage current VGS = 20 V; VDS = 0 V Turn-on time Turn-off time Input capacitance Output capacitance Feedback capacitance VDD = 50 V; RD = 250 ; VGS = 10 V; RG = 50 ; Resistive load August 2000 2 Rev 1.000 Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET MECHANICAL DATA Plastic surface mounted package; 3 leads SOT23 BSS123 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 Fig.1. SOT23 surface mounting package. Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8". August 2000 3 Rev 1.000 Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET DEFINITIONS Data sheet status Objective specification Product specification Limiting values BSS123 This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 2000 4 Rev 1.000 |
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