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1.25 Gbit/s Transimpedance Amplifier
Preliminary Data
FOA1121A1 FOA1122A1 Bipolar IC
Features * * * * Data rate up to 1.25 Gbit/s Input sensitivity -27.0 dBm at BER = 10 -9 High overload: 2 mApp maximum input current Single supply voltage: + 4.5 V to + 5.5 V P-TSSOP-16-1
* Internal DC-compensation loop increases dynamic range * No external components needed * Internal bias generation for PIN-photodiode * Internal low-pass filter to improve power supply rejection * Operates with PIN- or APD-photodiode * Monitor output for mirrored photodiode current
Applications * Fibre optics data communication systems * SONET OC-24, Gigabit-Ethernet * Pre-amplifier modules
Type FOA1121A1 FOA1122A1
Semiconductor Group
Ordering Code Q67000-H4131 Q67000-H4132
1
Package P-TSSOP-16-1 bare die
July 1998
FOA1121A1 FOA1122A1
0.5 k FILTER Vref = 4.2 V 3.0 k
FOA1121A1 FOA1122A1
VCC
GND
60 IN -40 +4.0 +9.2 60
Q+
Q-
DC compensation
Vref
MONITOR
s
Figure 1 Block diagram.
Table 1 Symbol
Pin Description Function Supply voltage Data input from PIN- or APD-photodiode Non-inverting data output Inverting data output Bias voltage for PIN-diode Mirrored photodiode current (connect pin via 0 ... 2 k to VCC) Ground
VCC
IN Q+ Q- FILTER MONITOR GND
Semiconductor Group
2
July 1998
FOA1121A1 FOA1122A1
Electrical Characteristics
Absolute Maximum Ratings
Stresses listed below here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Ambient temperature Tamb = -40 C ... +85 C
Parameter Supply voltage Junction temperature Storage temperature Relative ambient humidity ESD voltage
Symbol
Limit Values min. max. 6.0 125 150 85/85 -0.5 -40 -40 500
Unit V C C
Remarks
VCC Tj TS VESD
%/C no condensation V note 1) and 2)
Note: 1) Except IN-pin 2) HBM according to MIL STD 883D, method 3015.7 and ESD Assn. Standard S5.1-1993.
Recommended Operating Conditions
Ambient temperature Tamb = -40 C ... +85 C
Parameter Supply voltage Data transmission rate Supply current Thermal resistance Junction temperature
Symbol
Limit Values min. typ. +5.0 1.25 46 140 -10 +125 max. +5.5 +4.5
Unit V Gbit/s mA K/W C
Remarks
VCC ICC
JA
see note 1) see note 2)
Tj
Note: 1) Junction-to-ambient thermal resistance measurement conditions for packaged device: PCB area: 10 cm x 10 cm x 1.5 mm; copper area approx. 60 %; via holes to ground layer underneath the device; all pins soldered. 2) Do not exceed the maximum junction temperature. If used as packaged version, provide sufficient PCB heat sink to the device by soldering all pins and sufficient copper area underneath the chip (see note 1).
Semiconductor Group
3
July 1998
FOA1121A1 FOA1122A1
AC/DC Characteristics Conditions: Tamb = +25 C, VCC = +5.0 V, Cexternal = 0.85 pF
Parameter Supply current Input voltage Input current Input current before clipping Input resistance Input sensitivity Optical overload Transimpedance Output voltage swing (Q+ - Q-) Bandwidth (-3 dB) Output resistance Output voltage Output pattern jitter
(Note 1)
Symbol
Limit Values min. typ. 46 +1.65 2000 15 max. 56
Unit mA V
Remarks
IVCC VIN IIN IIN,CL
App (Note 1) App
RIN PIN POVL RT
VOUT 0.6
75 -27.0 0 48 0.78 800 48 60 72 1.1
dBm BER < 10 -9 (Note 1) dBm BER < 10 -9 (Note 1) k Vpp differential into 2 x 50 MHz V ps ps dB 600 V kHz AC-coupled outputs (via 22 nF) internally connected to VCC (Q+ + Q-)/2
3.2 App < IIN < 160 App 160 App < IIN < 1.6 mApp
f3db Rout VCMOUT tj,P
VCC - 0.6
15 45 35 400 500 +4.2 65
Power supply rejection PSSR ratio Bias resistance Bias voltage Low frequency cutoff
f < 10 MHz
(Note 2)
RBIAS VBIAS f3db, low
Note: 1) Data rate: 1.25 Gbit/s; data sequence: PRBS 2 23-1 2) Generated noise on power supply: sine curve, 100 mV pp (see application note b)
Semiconductor Group
4
July 1998
FOA1121A1 FOA1122A1
Package information
P-TSSOP-16-1
VCC GND GND IN FILTER GND GND NC 1 2 16 15 NC GND GND QQ+ GND GND MONITOR
3 4 5 6 7 8
FOA1121A1
14 13 12 11 10 9
NC: not connected
Figure 2
Package pinning.
bare die
GND GND GND GND GND
VCC
NC Size: 1,31 * 1,00 mm2
IN
FOA1122A1
GND
GND QGND Q+ GND
FILTER GND NC
GND
GND
GND
GND
NC: not connected
Figure 3
Pad assignment.
Semiconductor Group
5
GND
July 1998
FOA1121A1 FOA1122A1
Eye-diagrams measured at data rates of 1.25 Gbit/s
ext. modulator EDFA
optical out: -2 dBm
Attenuator
Q+
IN
FOA1122 (DUT)
el.* Q-
TEK CSA803A
opt.**
monitor out: -8 dBm
Bit pattern generator
* electrical input: sampling head SD26, bandwidth 20 GHz, risetime < 17.5 ps
** optical input: O/E-converter head SD26, bandwidth 20 GHz, opt. pulse response speed (FWHM) < 28.5 ps
Figure 4
Measurement set-up.
Figure 5
Eye diagrams at input power -25 dBm (top) and -27 dBm (bottom).
6 July 1998
Semiconductor Group
FOA1121A1 FOA1122A1
Bit error rate (BER) measurements
inp Coupler
Clock & Data Recovery
ref
clock
data
SDH RX
SDH TX
10dB
Attenuator
10dB
TIA (DUT)
10dB
LG 1605 (AT&T)
Figure 6
Measurement set-up.
BER
BER 10
-5
T=20C
10
-7
10
-9
10
-11
-30
-29
-28
-27
-26
optical input power [dBm]
Figure 7 Measured bit error rate at 1.25 Gbit/s
Semiconductor Group
7
July 1998
FOA1121A1 FOA1122A1
Application notes a) General information * The output pins Q+ and Q- must be terminated equally to prevent instabilities. * It is recommended to minimize stray capacitance when connecting photodiode to transimpedance amplifier. * To improve power supply rejection ratio (PSRR), VCC should be supplied via resistor (4.7 ), capacitor (100 nF) to GND, and inductor (BLM11A601, Murata) to VCC-pin. * The monitor pin (not used in these application notes) must be left open or connected to VCC via resistor of 0 ... 2 k. b)
L* 4.7 VCC 100 nF GND VCC
PINDiode
FILTER
Q+ FOA1121/2
22 nF Q+
IN GND
Q-
Q22 nF
*) BLM11A601, Murata
Figure 8 Application using PIN-photodiode. c)
L* 4.7 VCC 100 nF VAPD x k FILTER x nF IN GND VCC GND
Q+ FOA1121/2 Q-
22 nF Q+
Q22 nF
APD-Diode
*) BLM11A601, Murata
Figure 9 Application using APD-photodiode.
Semiconductor Group 8 July 1998
FOA1121A1 FOA1122A1
c)
Vcc
TO-can
PIN-Diode
Note: no external components needed
OUT +
NC
GND GND GND GND GND
FOA1122
GND GND GND GND GND
OUT-
FILTER Q+ GND
GND GND
GND GND
VCC
IN Q-
NC
Figure 10
Application example of FOA1122 mounted in TO-can.
Package outline of P-TSSOP-16-1 (Plastic Thin Shrink Small Outline)
Sorts of Packing For more information on package outlines for tubes, trays, etc. see our Data Book "Package Information" (Ordering No. B192-H663-7400). Dimensions in mm SMD = Surface Mounted Device Semiconductor Group 9 July 1998

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