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| Si Photodiode Features * Transparent epoxy potting * High sensitivity * Broad directivity * Unbiased for low frequency or biased for high frequency measurement KPD1203K Transparent epoxy resin KPD1203K K1 o4.2 Applications * Optical switches * Optical encoders * Pulse detectorS * Sensors and industrial controls 2.54 o0.45 13.5 o5.7 max 1 2 Maximum ratings Item Symbol VR IR IF Top Tstg Value 15 500 60 -20 ~ +100 -30 ~ +100 Units V A mA C C 3.00.3 2.0 45 1 TO-18 1 Reverse Voltage Reverse Current Forward Current Operating Temperature Storage Temperature 1 Anode 2 Cathode (Units: mm) Characteristics (Ta=25 C unless otherwise noted.) Parameter Active Dia. Operating Voltage Sensitive Wavelength Open Circuit Voltage Short Circuit Current Dark Current Capacitance Rise/Fall Time Cutoff Frequency Symbol D Min. Typ. 0.92x0.92 0 5 Max. Units mm V Test Conditions VR0 l Vop Ish Id C tr tf fc 10 450 320 4 For low frequency For high frequency lP=Peak wavelength 950(lp) 400 9 0.1 50 8 27 15 1100 nm mV 1000lux(@2856K) A 1 60 10 35 nA pF ns MHz VR=5V V = 0, f = 1MHz VR=5V, l=780nm, RL=50 VR=5V, l=780nm, RL=50 Kyosemi Corporation KPD1203K Dark Current-Reverse Voltage (Ta=25C) 10-8 Dark Current (A) 10-9 10-10 10-11 10-12 Capacitance (pF) 80 70 60 50 40 30 20 10 0 5 Bias (V) Spectral Sensitivity 100 Relative Sensitivity (%) Relative Gain (dB) 80 60 40 20 0 400 600 800 1000 Wave length (nm) 1200 10 0 -3dB CV Charastaristics 10 15 0 0 5 Bias (V) 10 15 Frequency Response -10 -20 -30 105 10 6 10 7 Frequency (Hz) Photocurrent-Illuminance (Ta=25C) 10 3 Photocurrent Ish (A) 10 2 Dark Current ID (A) 10 1 10 0 10-1 10-2 10-3 10-2 10-1 10 0 10 1 10 2 10 3 Illuminance L (lux) 10 4 -15 1203K 0 -5 5 Dark Current -Ambient Temperature (VR =10V) 10 -25 0 25 50 75 100 Ambient Temperature Ta (C) -20 Directivity -10 0 +10 +20 100 +30 -30 Relative Sensitivity (%) -40 -50 -60 -70 -80 -90 0 Angle (deg.) 1203K +40 +50 +60 +70 +80 +90 50 Kyosemi Corporation |
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