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| SemiWell Semiconductor SFS9926 Dual N-Channel MOSFET Features Low RDS(on) (0.030 )@VGS=4.5V Low RDS(on) (0.043 )@VGS=2.5V Gate Charge (Typical 14nC) Improved dv/dt Capability Maximum Junction Temperature Range (150C) Available in Tape and Reel Symbol D2 D2 D1 D1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 General Description This Power MOSFET is produced using SemiWell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for Battery protection circuit, Load switch and other power management application. 8-SOIC D1 D2 D2 D1 S1 G S2 G1 2 Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TA = 25C) Drain Current Pulsed Gate to Source Voltage Total Power Dissipation Single Operation (TA=25C) Total Power Dissipation Single Operation (TA=70C) Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 1) Parameter Value 20 6.5 30 Units V A A V W W C C 12 2.0 1.28 - 55 ~ 150 300 Thermal Characteristics Symbol RJA Parameter Thermal Resistance, Junction-to-Ambient (Note 4) Value Min. - Typ. - Max. 62.5 Units C/W December, 2002. Rev. 0. Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1/6 SFS9926 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-Source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 C VDS = 16V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VDS = VGS, ID = 250uA VGS = 4.5 V, ID = 6.5A VGS = 2.5 V, ID = 5.4A 20 24 1 100 -100 V mV/C uA nA nA ( TJ = 25 C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 0.5 0.025 0.036 1.5 0.030 0.043 V Dynamic Characteristics Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =10V, f = 1MHz 645 350 115 pF Dynamic Characteristics Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =10V, VGS =4.5V, ID =4.5A (Note 2,3) VDD =10V, ID =1A, RG =50 VGS =4.5V (Note 2,3) 9 45 95 60 14 2.5 5 28 100 200 130 18 nC ns - Source-Drain Diode Ratings and Characteristics Symbol IS VSD Parameter Maximum Continuous Diode Forward Current Diode Forward Voltage Test Conditions IS =1.3A, VGS =0V (Note 2) Min. - Typ. - Max. 1.3 1.2 Unit. A V NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. Pulse Test : Pulse Width 300us, Duty Cycle 2% 3. Essentially independent of operating temperature. 4. Surface mounted on 1 inch2 Cu board. 2/6 SFS9926 Fig 1. On-State Characteristics VGS 4.5 V 4.0 V 3.5 V 3.0 V 2.5 V Bottom : 2.0 V Top : Fig 2. Transfer Characteristics 10 1 ID, Drain Current [A] 10 ID, Drain Current [A] 1 125 C 10 0 o 25 C -55 C o o Notes : 1. 250 s Pulse Test 2. TC = 25 Notes : 1. VDS = 5V 2. 250 s Pulse Test 10 -1 10 0 10 0 10 -1 2 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage 0.08 0.07 Fig 4. On State Current vs. Allowable Case Temperature RDS(ON), Drain-Source On-Resistance [ ] 0.06 0.05 0.04 0.03 0.02 0.01 0.00 VGS = 2.5V IDR, Reverse Drain Current [A] 10 1 VGS = 4.5V 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 0 5 10 15 20 25 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Fig 5. Capacitance Characteristics 1500 Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd Fig 6. Gate Charge Characteristics 5 Capacitance [pF] 1000 Notes : 1. VGS = 0V 2. f=1MHz VGS, Gate-Source Voltage [V] 1250 4 VDS = 10V VDS = 16V 3 750 Ciss Coss 2 500 250 1 Note : ID = 6.5A Crss 0 0 5 10 15 20 25 0 0 3 6 9 12 15 18 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3/6 SFS9926 Fig 7. Breakdown Voltage Variation vs. Junction Temperature 1.2 2.5 Fig 8. On-Resistance Variation vs. Junction Temperature BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.0 1.1 1.5 1.0 1.0 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 Notes : 1. VGS = 4.5 V 2. ID = 6.5 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig 9. Normalized Transient Thermal Response Curve Z JANormalized, Thermal Response 10 0 D = 0 .5 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 s in g le p u ls e N o te s : 1 . Z J A t) = 6 2 .5 /W ( 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T A = P D M * Z J A t) ( 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ] 4/6 SFS9926 Fig. 10. Gate Charge Test Circuit & Waveforms 50K 12V 200nF 300nF Same Type as DUT VDS VGS Qg V 4.5V Qgs Qgd VGS DUT 1mA Charge Fig 11. Switching Time Test Circuit & Waveforms VDS RL VDD ( 0.5 rated V DS ) VDS 90% 4.5V V Pulse Generator RG DUT Vin 10% td(on) t on tr td(off) t off tf 5/6 SFS9926 8-SOIC Package Dimension Dim. A B C D E F G H I J K mm Min. 1.35 0.1 0.38 0.19 4.8 3.8 5.8 0.5 0' 0.250 Typ. 1.55 0.175 0.445 0.22 4.9 3.9 6 0.715 4' 0.375 Max. 1.75 0.25 0.510 0.25 5 4 6.2 0.93 8' 0.05 Min. 0.053 0.004 0.015 0.007 0.189 0.150 1.27 BSC 0.228 0.020 0' 0.010 Inch Typ. 0.061 0.007 0.018 0.009 0.193 0.154 0.236 0.028 4' 0.015 Max. 0.069 0.010 0.020 0.010 0.197 0.157 0.244 0.037 8' 0.020 F 0.254(Gap plane) H E K x 45 A D J I G C B 0.1 6/6 |
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