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N-CHANNEL 30V - 0.0075 - 70A DPAK/IPAK/TO-220 LOW GATE CHARGE STripFETTM II POWER MOSFET
TYPE STB70NF03L STP70NF03L STB70NF03L-1
s s s s s
STB70NF03L STP70NF03L STB70NF03L-1
VDSS 30 V 30 V 30 V
RDS(on) < 0.0095 < 0.0095 < 0.0095
ID 70 A 70 A 70 A
3 1
3 12
TYPICAL RDS(on) = 0.0075 @ 10 V OPTIMAL RDS(on) x Qg TRADE-OFF @ 5 V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")
D2PAK TO-263 (Suffix "T4")
3 1 2
I2PAK TO-262
DESCRIPTION This application specific Power MOSFET is the third genaration of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID(#) ID IDM(*) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature
TO-220
INTERNAL SCHEMATIC DIAGRAM
Value 30 30 18 70 50 280 100 0.67 5.5 500 -55 to 175
Unit V V V A A A W W/C V/ns mJ C
(*) Current limited by the package June 2003
(1) ISD 70A, di/dt 350A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting T j = 25 oC, ID = 35A, VDD = 25V
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NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P70NF03L@ B70NF03L@
STB70NF03L STP70NF03L
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1.5 62.5 300 C/W C/W C
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 18 V Min. 30 1 10 100 Typ. Max. Unit V A A nA
ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 5 V ID = 250 A ID = 35 A ID = 18 A Min. 1 0.0075 0.0135 0.0095 0.018 Typ. Max. Unit V
DYNAMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 35 A Min. Typ. 25 1440 560 135 Max. Unit S pF pF pF
VDS = 25V f = 1 MHz VGS = 0
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STB70NF03L STP70NF03L
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 35 A VDD = 15 V RG = 4.7 VGS = 5 V (Resistive Load, Figure 3) VDD= 15V ID= 70A VGS= 5V Min. Typ. 22 165 22.5 9 12 30 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 35 A VDD = 15 V RG = 4.7, VGS = 5 V (Resistive Load, Figure 3) Min. Typ. 21 25 Max. Unit ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
1.5 %.
Test Conditions
Min.
Typ.
Max. 70 280
Unit A A V ns nC A
ISD = 70 A
VGS = 0 42 52 2.5
1.3
di/dt = 100A/s ISD = 70 A VDD = 20 V Tj = 150C (see test circuit, Figure 5)
(*)Pulsed: Pulse duration = 300 s, duty cycle (*)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
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STB70NF03L STP70NF03L
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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STB70NF03L STP70NF03L
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.
.
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STB70NF03L STP70NF03L
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STB70NF03L STP70NF03L D2PAK MECHANICAL DATA
DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 0 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.591 0.050 0.055 0.094 0.015 8 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.21 8.95 8 10.4 0.394 0.334 0.208 0.624 0.055 0.069 0.126 TYP. MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.028 0.045 0.018 0.048 0.352 0.315 0.409 inch. TYP. TYP. 0.181
0.106
0.009 0.037 0.067 0.024 0.054 0.368
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STB70NF03L STP70NF03L
TO-262 (I2PAK) MECHANICAL DATA
mm MIN. A A1 B B2 C C2 D e E L L1 L2 4.4 2.49 0.7 1.14 0.45 1.23 8.95 2.4 10 13.1 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 2.7 10.4 13.6 3.78 1.4 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055
DIM.
A
C2
B2
B
E
L1 L2 D L
P011P5/E
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e
A1
C
STB70NF03L STP70NF03L TO-220 MECHANICAL DATA
DIM. A C D E F F1 F2 G G1 H2 L2 L3 L4 L5 L6 L7 L9 DIA 13 2.65 15.25 6.20 3.50 3.75 mm. MIN. 4.4 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 16.40 28.90 14 2.95 15.75 6.60 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 TYP. MAX. 4.6 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 1.137 0.551 0.116 0.620 0.260 0.154 0.151 inch. TYP. TYP. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409
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STB70NF03L STP70NF03L
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 BASE QTY 1000 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.795 0.960 3.937 1.197 BULK QTY 1000 1.039 0.520 MIN. inch MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 0.35 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 MIN. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0075 1.574 .0.0098 0.933 0.0137 0.956 inch MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082
* on sales type
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STB70NF03L STP70NF03L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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