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| Power Transistors 2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A s Features 0.70.1 Unit: mm 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1985 2SD1985A 2SD1985 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25C) Ratings 60 80 60 80 6 5 3 25 2 150 -55 to +150 Unit 14.00.5 emitter voltage 2SD1985A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A W C C Solder Dip 4.0 V 16.70.3 7.50.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1985 2SD1985A 2SD1985 2SD1985A 2SD1985 2SD1985A (TC=25C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 5V, IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = - 0.1A, VCC = 50V 30 0.5 2.5 0.4 60 80 70 10 1.8 1.2 V V MHz s s s 250 min typ max 200 200 300 300 1 Unit A A mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification. 1 Power Transistors PC -- Ta 40 5 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink 30 TC=25C 2SD1985, 2SD1985A IC -- VCE 8 VCE=4V 7 25C 6 5 4 3 2 1 TC=100C -25C IC -- VBE Collector power dissipation PC (W) Collector current IC (A) IB=100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 1 10mA 3 (1) 20 2 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) 4 Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=8 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 -25C TC=100C 25C 10000 hFE -- IC 10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03 fT -- IC VCE=5V f=10MHz TC=25C Forward current transfer ratio hFE 1000 300 100 30 10 3 1 0.01 0.03 TC=100C 25C -25C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) -10 -3 ICP IC DC 10ms 10000 Non repetitive pulse TC=25C t=1ms Rth(t) -- t Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink -1 - 0.3 - 0.1 - 0.03 - 0.01 Thermal resistance Rth(t) (C/W) Collector current IC (A) 1000 100 (1) (2) 10 2SD1985 - 0.003 - 0.001 -1 2SD1985A 1 -3 -10 -30 -100 -300 -1000 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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