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| HGTP7N60C3D, HGT1S7N60C3DS Data Sheet January 2000 File Number 4150.2 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49121. Features * 14A, 600V at TC = 25oC * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Ordering Information PART NUMBER HGTP7N60C3D HGT1S7N60C3DS PACKAGE TO-220AB TO-263AB BRAND G7N60C3D G7N60C3D JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A. Symbol C GATE EMITTER COLLECTOR (FLANGE) G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000 HGTP7N60C3D, HGT1S7N60C3DS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTP7N60C3D, HGT1S7N60C3D HGT1S7N60C3DS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 600 14 7 8 56 20 30 40A at 480V 60 0.487 -40 to 150 260 1 8 UNITS V A A A A V V W W/oC oC oC s s CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 50. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC MIN 600 3.0 VCE(PK) = 480V VCE(PK) = 600V 40 6 TYP 1.6 1.9 5.0 MAX 250 2.0 2.0 2.4 6.0 250 UNITS V A mA V V V nA A A Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V IC = 250A, VCE = VGE VGE = 25V TJ = 150oC RG = 50 VGE = 15V L = 1mH Gate-Emitter Threshold Voltage Gate-Emitter Leakage Current Switching SOA VGE(TH) IGES SSOA Gate to Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V - 8 23 30 8.5 11.5 350 140 165 600 1.9 30 38 400 275 2.5 V nC nC ns ns ns ns J J V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage td(ON)I trI td(OFF)I tfI EON EOFF VEC TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 50 L = 1mH IEC = 7A - 2 HGTP7N60C3D, HGT1S7N60C3DS Electrical Specifications PARAMETER Diode Reverse Recovery Time TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL trr TEST CONDITIONS IEC = 7A, dIEC/dt = 200A/s IEC = 1A, dIEC/dt = 200A/s Thermal Resistance RJC IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTP7N60C3D and HGT1S7N60C3DS were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. MIN TYP 25 18 MAX 35 30 2.1 2.0 UNITS ns ns oC/W oC/W Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) 40 DUTY CYCLE <0.5%, V CE = 10V PULSE DURATION = 250s 35 30 25 20 15 10 5 0 4 6 8 10 12 VGE, GATE TO EMITTER VOLTAGE (V) 14 TC = 150oC TC = 25oC TC = -40oC ICE, COLLECTOR TO EMITTER CURRENT (A) 40 PULSE DURATION = 250s, DUTY CYCLE <0.5%, 35 TC = 25oC 30 25 VGE = 15.0V 20 15 8.5V 10 8.0V 5 0 0 2 4 6 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 7.5V 7.0V 10 9.0V 12.0V 10.0V FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS ICE, COLLECTOR TO EMITTER CURRENT (A) 40 35 30 25 20 15 10 ICE, COLLECTOR TO EMITTER CURRENT (A) PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 10V 40 35 30 25 20 15 10 5 0 PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V TC = -40oC TC = 25oC TC = -40oC TC = 150oC TC = 150oC TC = 25oC 5 0 0 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 0 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE 3 HGTP7N60C3D, HGT1S7N60C3DS Typical Performance Curves ICE , DC COLLECTOR CURRENT (A) 15 (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (mS) VCE = 360V, RG = 50, TJ = 125oC 12 10 ISC 8 120 9 100 6 6 80 3 4 tSC 2 10 13 14 11 12 VGE , GATE TO EMITTER VOLTAGE (V) 60 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) 40 15 FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE TEMPERATURE 50 td(ON)I , TURN-ON DELAY TIME (ns) 40 30 TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V 500 td(OFF)I , TURN-OFF DELAY TIME (ns) 450 400 350 FIGURE 6. SHORT CIRCUIT WITHSTAND TIME TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V 20 VGE = 10V VGE = 15V 10 VGE = 10V or 15V 300 250 5 2 5 8 11 14 17 20 ICE , COLLECTOR TO EMITTER CURRENT (A) 200 2 8 11 14 17 5 ICE , COLLECTOR TO EMITTER CURRENT (A) 20 FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 200 TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V VGE = 10V tfI , FALL TIME (ns) 300 250 TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V trI , TURN-ON RISE TIME (ns) 100 200 VGE = 10V or 15V 150 VGE = 15V 10 5 2 17 14 8 11 ICE , COLLECTOR TO EMITTER CURRENT (A) 5 20 100 2 5 8 11 14 17 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT 4 ISC, PEAK SHORT CIRCUIT CURRENT (A) 20 VGE = 15V 12 140 HGTP7N60C3D, HGT1S7N60C3DS Typical Performance Curves 2000 EON , TURN-ON ENERGY LOSS (J) (Continued) 3000 EOFF, TURN-OFF ENERGY LOSS (J) TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V VGE = 10V TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V 1000 1000 500 VGE = 15V 500 VGE = 10V OR 15V 100 40 2 8 11 14 17 ICE , COLLECTOR TO EMITTER CURRENT (A) 5 20 100 2 5 8 11 14 17 ICE , COLLECTOR TO EMITTER CURRENT (A) 20 FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 200 fMAX , OPERATING FREQUENCY (kHz) 100 TJ = 150oC, TC = 75oC RG = 50, L = 1mH 50 TJ = 150oC, VGE = 15V, RG = 50, L = 1mH 40 VGE = 10V 10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 2.1oC/W 1 2 VGE = 15V 30 20 10 0 10 20 30 0 100 200 300 400 500 600 ICE, COLLECTOR TO EMITTER CURRENT (A) VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA VCE , COLLECTOR TO EMITTER VOLTAGE (V) 1200 1000 C, CAPACITANCE (pF) 800 CIES 600 500 400 300 200 100 0 0 15 12.5 10 7.5 5 2.5 VCE = 200V VCE = 400V VCE = 600V 600 400 200 CRES 0 0 5 10 15 COES 20 25 5 10 15 20 25 0 30 VCE, COLLECTOR TO EMITTER VOLTAGE (V) QG , GATE CHARGE (nC) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 16. GATE CHARGE WAVEFORMS 5 VGE, GATE TO EMITTER VOLTAGE (V) FREQUENCY = 1MHz IG(REF) = 1.044mA, RL = 50, TC = 25oC HGTP7N60C3D, HGT1S7N60C3DS Typical Performance Curves ZJC , NORMALIZED THERMAL RESPONSE (Continued) 100 0.5 t1 PD 10-1 0.1 0.05 0.02 0.01 SINGLE PULSE 10-2 -5 10 10-4 t2 0.2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-2 10-1 10-3 t1 , RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 30 IEC , FORWARD CURRENT (A) 30 25 20 15 10 TC = 25oC, dIEC/dt = 200A/s 10 tr, RECOVERY TIMES (ns) trr ta 175oC 1.0 100oC 25oC tb 5 0 0.5 0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 1 3 7 VEC , FORWARD VOLTAGE (V) IEC , FORWARD CURRENT (A) FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT Test Circuit and Waveforms L = 1mH RHRD660 VGE 90% 10% EOFF EON RG = 50 + VCE 90% VDD = 480V ICE 10% td(OFF)I tfI trI td(ON)I - FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS 6 HGTP7N60C3D, HGT1S7N60C3DS Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBD LD26 or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBDTM LD26 is a Trademark of Emerson and Cumming, Inc. |
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