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HM62832H Series
32768-word x 8-bit High Speed CMOS Static RAM
Features
* High speed: Fast access time 25/35/45 ns (max) * Low power Active: 300 mW (typ) Standby: 10 W (typ) (L-version) * Single 5 V supply * Completely static memory No clock or timing strobe required * Equal access and cycle times * Common data input and output - Three state output * Directly TTL compatible - All inputs and outputs
Ordering Information
Type No. HM62832HP-25 HM62832HP-35 HM62832HP-45 HM62832HLP-25 HM62832HLP-35 HM62832HLP-45 HM62832HJP-25 HM62832HJP-35 HM62832HJP-45 Access Time 25 ns 35 ns 45 ns 25 ns 35 ns 45 ns 25 ns 35 ns 45 ns 300-mil 28-pin plastic SOJ (CP-28DN) Package 300-mil 28-pin plastic DIP (DP-28NA)
HM62832HLJP-25 25 ns HM62832HLJP-35 35 ns HM62832HLJP-45 45 ns
HM62832H Series
Pin Arrangement
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 VSS
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VCC WE A13 A8 A9 A11 OE A10 CS I/O 7 I/O 6 I/O 5 I/O 4 I/O 3
(Top view)
Pin Description
Pin Name A0 - A14 I/O0 - I/O7 CS WE OE VCC VSS Function Address Input/output Chip select Write enable Output enable Power supply Ground
2
HM62832H Series
Block Diagram
A13 A14 A12 A7 A6 A5 A4 A3
VCC VSS X address buffer Row decoder Memory array 512 x 512
I/O 0 I/O 7
I/O buffer
Column I/O Column decoder
WE OE CS
Y address buffer A2 A1 A0 A10 A11 A9 A8
Absolute Maximum Ratings
Parameter Voltage on any pin relative to V SS Power dissipation Operating temperature Storage temperature Storage temperature under bias Note: 1. -2.5 V for pulse width 10 ns Symbol VT PT Topr Tstg Tbias Value -0.5 1.0 0 to +70 -55 to +125 -10 to +85
*1
Unit to +7.0 V W C C C
Function Table
CS H L L L OE X L H L WE X H L L Mode Not selected Read Write VCC Current I SB , I SB1 I CC I CC I CC I/O Pin High-Z Dout Din Din Read cycle (1) to (3) Write cycle (1) Write cycle (2) Ref. Cycle
Note: X: H or L
3
HM62832H Series
Recommended DC Operating Conditions (Ta = 0 to +70C)
Parameter Supply voltage Symbol VCC VSS Input voltage VIH VIL Note: 1. -2.0 V for pulse width 10 ns Min 4.5 0 2.2 -0.5
*1
Typ 5.0 0 -- --
Max 5.5 0 6.0 0.8
Unit V V V V
DC Characteristics (Ta = 0 to +70C, VCC = 5 V 10%, VSS = 0 V)
Parameter Input leakage current Output leakage current Symbol Min Typ*1 |ILI| |ILO | -- -- -- -- Max Unit Test Conditions 2 2 A A Vin = VSS to V CC CS = VIH or OE = VIH or WE = VIL, VI/O = VSS to V CC Min cycle, duty = 100%, CS = VIL, II/O = 0 mA CS = VIH CS V CC - 0.2 V 0 V Vin 0.2 V or Vin V CC - 0.2 V L-version I OL = 8 mA I OH = -4 mA Note
Operating power supply current I CC Standby power supply current Standby power supply current I SB I SB1
-- -- --
60 15 0.02
120 30 2
mA mA mA
-- Output voltage VOL VOH Note: -- 2.4
0.002 0.1 -- -- 0.4 --
mA V V
1. Typical values are at VCC = 5.0 V, Ta = +25C and not guaranteed.
Capacitance (Ta = 25C, f = 1.0 MHz)*1
Parameter Input capacitance Input/output capacitance Note: Symbol Cin CI/O Min -- -- Typ -- -- Max 6 10 Unit pF pF Test Conditions Vin = 0 V VI/O = 0 V
1. This parameter is sampled and not 100% tested.
4
HM62832H Series
AC Characteristics (Ta = 0 to +70C, VCC = 5 V 10%, unless otherwise noted.)
Test Conditions * * * * Input pulse levels: 0.0 V to 3.0 V Input rise and fall time: 5 ns Input and output timing reference levels: 1.5 V Output load: See figures
+5 V +5 V
480 Dout 255 30 pF*1 Dout 255
480
5 pF*1
Output load (A) Note: 1. Including scope and jig
Output load (B) (for tCLZ, tOLZ, tCHZ, tOHZ, tWHZ and tOW)
Read Cycle
HM62832H-25 Parameter Read cycle time Address access time Chip select access time Output enable to output valid Output hold from address change Chip selection to output in low-Z Output enable to output in low-Z Symbol Min t RC t AA t ACS t OE t OH t CLZ t OLZ 25 -- -- -- 5 5 0 0 0 Max -- 25 25 12 -- -- -- 12 12 HM62832H-35 Min 35 -- -- -- 5 5 0 0 0 Max -- 35 35 15 -- -- -- 15 15 HM62832H-45 Min 45 -- -- -- 5 5 0 0 0 Max -- 45 45 20 -- -- -- 20 20 Unit Note ns ns ns ns ns ns ns ns ns 6 1 1 1 1
Chip deselection to output in high-Z t CHZ Output enable to output in high-Z t OHZ
5
HM62832H Series
Write Cycle
HM62832H-25 Parameter Write cycle time Chip selection to end of write Address valid to end of write Address setup time Write pulse width Write recovery time Write to output in high-Z Data to write time overlap Data hold from write time Output disable to output in high-Z Output active from end of write Symbol Min t WC t CW t AW t AS t WP t WR t WHZ t DW t DH t OHZ t OW 25 15 20 0 15 0 0 12 0 0 5 Max -- -- -- -- -- -- 12 -- -- 12 -- HM62832H-35 Min 35 20 30 0 20 0 0 15 0 0 5 Max -- -- -- -- -- -- 15 -- -- 15 -- HM62832H-45 Min 45 25 40 0 25 0 0 20 0 0 5 Max -- -- -- -- -- -- 20 -- -- 20 -- Unit Notes ns ns ns ns ns ns ns ns ns ns ns 2, 5 2, 7 3 4 2, 5
Notes: 1. Transition is measured 200 mV from steady state voltage with load (B). This parameter is sampled and not 100% tested. 2. Transition is measured 200 mV from high impedance voltage with load (B). This parameter is sampled and not 100% tested. 3. A write occurs during the overlap (tWP) of a low CS and a low WE. 4. t WR is measured from the ealier of CS or WE going high to the end of write cycle. 5. During this period, I/O pins are in the output state. The input signals out of phase must not be applied. 6. Dout is in the same phase of written data of this write cycle. 7. If CS is low during this period, I/O pins are in the output state. The input signals out of phase must not be applied to I/O pins.
6
HM62832H Series
Timing Waveforms
Read Cycle Timing-1*1 (WE = VIH)
tRC Address tAA
OE tOE tOH tOLZ CS tOHZ tACS tCLZ Dout Valid Data tCHZ
Note: 1. Transition is measured 200 mV from steady state voltage with Load (B). This parameter is sampled and not 100% tested.
Read Cycle Timing-2 (WE = VIH, CS = VIL , OE = VIL )
tRC Address tAA tOH Dout Valid Data tOH
7
HM62832H Series
Read Cycle Timing-3*1 (WE = VIH, OE = VIL )
CS tACS tCLZ Dout Valid Data tCHZ
Notes: 1. Transition is measured 200 mV from steady state voltage with load (B). This parameter is sampled and not 100% tested. 2.Address should be valid prior to or coincident with CS transition low.
Write Cycle Timing-1*2
tWC Address tWR OE tCW CS
*1
tAW tAS tOHZ Dout tDW Din tDH Valid Data tWP
WE
Notes: 1. If the CS low transition occurs simultaneously with the WE low transition or after the WE low transition, outputs remain in a high impedance state. 2.WE must be high during all address transitions except when device is deselected with CS.
8
HM62832H Series
Write Cycle Timing-2*3 (OE Low Fixed)
tWC Address tCW CS
*1
tWR
tWP WE tOH tWHZ tOW
*2
tAS
Dout tDW Din tDH
Valid Data
Notes: 1. If the CS low transition occurs simultaneously with the WE low transition or after the WE low transition, outputs remain in a high impedance state. 2.Dout is the read data of next address. 3.WE must be high during all address transitions except when device is deselected with CS.
9
HM62832H Series
Low VCC Data Retention Characteristics (Ta = 0 to +70C)
This characteristics is guaranteed only for L-version.
Parameter VCC for data retention Symbol VDR Min 2.0 Typ -- Max -- Unit V Test Conditions CS V CC - 0.2 V, Vin V CC - 0.2 V or 0 V Vin 0.2 V
Data retention current Chip deselect to data retention time Operation recovery time Note: 1. VCC = 3.0 V
I CCDR t CDR tR
-- 0 5
1 -- --
50*1 -- --
A ns ms
Low V CC Data Retention Timing Waveform
tCDR VCC 4.5 V 2.2 V VDR1 CS 0V CS VCC - 0.2 V tR
Data retention mode
1.3 Low Level Input Voltage VIL (Normalized) Ta = 25C 1.2
1.1
1.0 0.9 0.8 0.7 4.5
4.75
5.0
5.25
5.5
Supply Voltage VCC (V)
Low Level Input Voltage vs. Supply Voltage
10
HM62832H Series
High Level Input Voltage V IH (Normalized) 1.3 Ta = 25C 1.2 1.1 1.0 0.9 0.8 0.7 4.5
4.75
5.0
5.25
5.5
Supply Voltage VCC (V)
High Level Input Voltage vs. Supply Voltage
1.6 Ta =25C VCC = 5 V
High Level Output Current I OH (Normalized)
1.4 1.2
1.0 0.8 0.6 0.4 1 2 3 4 5 High Level Output Voltage VOH (V)
High Level Output Current vs. High Level Output Voltage
11
HM62832H Series
Low Level Output Current I OL (Normalized) 1.6 1.4 1.2 Ta = 25C VCC = 5 V
1.0 0.8 0.6 0.4 0 0.2 0.4 0.6 0.8 Low Level Output Voltage V OL (V)
Low Level Output Current vs. Low Level Output Voltage
10
-5
VCC = 3 V CS = 2.8 V
Standby Current I SBI (A)
10
-6
10
-7
10
-8
0
20
40
60
80
Ambient Temperature Ta (C)
Standby Current vs. Ambient Temperature
12
HM62832H Series
1.4 Standby Current I SBI (Normalized) 1.2
1.0 0.8 0.6 Ta = 25C CS = VCC - 0.2 V 0.4 0.2
2
3
4
5
6
Supply Voltage VCC (V)
Standby Current vs. Supply Voltage
1.6 Ta = 25C Supply Current I CC (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 4.5
4.75
5.0
5.25
5.5
Supply Voltage V CC (V)
Supply Current vs. Supply Voltage
13
HM62832H Series
1.6 V CC = 5.0 V Supply Current I CC (Normalized) 1.4
1.2 1.0 0.8 0.6 0.4 0 20 40 60 80 Ambient Temperature Ta (C)
Supply Current vs. Ambient Temperature
1.3 Access Time t AA, t ACS (Normalized) Ta = 25C 1.2
1.1 1.0 0.9
0.8 0.7 4.5
4.75
5.0
5.25
5.5
Supply Voltage VCC (V)
Access Time vs. Supply Voltage
14
HM62832H Series
1.8 Access Time t AA, t ACS (Normalized) 1.6 1.4 1.2 1.0
0.8 0.6 0 50 100 150 200 Load Capacitance C L (pF)
Access Time vs. Load Capacitance
1.3 Access Time t AA, t ACS (Normalized) VCC = 5.0 V 1.2 1.1 1.0 0.9 0.8 0.7 0 20 40 60 80 Ambient Temperature Ta (C)
Access Time vs. Ambient Temperature
15
HM62832H Series
1.4 Supply Current I CC (Normalized) 1.2 66 50 40 33 29 25
1.0 0.8 0.6 0.4 0.2 10
15
20
25
30
35
40
Frequency f (MHz)
Supply Current vs. Frequency
16
HM62832H Series
Package Dimensions
HM62832HP/HLP Series (DP-28NA)
36.00 28 37.32 Max 15
7.37 Max
Unit: mm
1
2.20 Max
1.3
14 5.08 Max
7.10
7.62
0.51 Min
2.54 Min
0.25 - 0.05 0 - 15
+ 0.11
2.54 0.25
0.48 0.10
HM62832HJP/HLJP Series (CP-28DN)
18.17 18.54 Max 28 15
Unit: mm
0.74
3.50 0.26
1
14
7.62 0.13
8.64 0.13
1.30 Max
0.80
0.43 0.10
1.27 0.10
0.35 6.76 + 0.16 -
0.21 2.40 + 0.24 -
+0.25 -0.17
17

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