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| TP0205A/AD New Product Vishay Siliconix P-Channel 20-V MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) 3.8 @ VGS = -4.5 V 5.0 @ VGS = -2.5 V ID (mA) -180 -100 FEATURES D D D D D High-Side Switching Low On-Resistance: 2.6 W (typ) Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns 2.5-V or Lower Operation BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories D Battery Operated Systems D Load/Power Switching-Cell Phones, PDA SOT-323 SC-70 (3-Leads) G 1 3 S 2 Order Number: TP0205A D S1 G1 D2 1 2 3 SOT-363 SC-70 (6-Leads) 6 5 4 D1 G2 S2 Order Number: TP0205AD ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM PD TJ, Tstg TP0205A -20 "8 -180 -140 -500 0.15 0.10 TP0205AD Unit V mA A 0.20 (Total) 0.13 (Total) -55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70869 S-58611--Rev. A, 19-Jul-99 www.siliconix.com S FaxBack 408-970-5600 Symbol RthJA TP0205A 833 TP0205AD 625 (Total) Unit _C/W 1 TP0205A/AD Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VDS = 0 V, ID = -10 mA VDS = VGS, ID = -50 mA VDS = 0 V, VGS = "8 V VDS = -20 V, VGS = 0 V VDS = -20 V, VGS = 0 V, TJ = 55_C VGS w -4.5 V, VDS = -8.0 V VGS w -2.5 V, VDS = -5.0 V VGS = -4.5 V, ID = -180 mA rDS( ) DS(on) gfs VSD VGS = -2.5 V, ID = -400 mA -120 2.6 4.0 200 -0.7 -1.2 3.8 5.0 W mS V -20 -0.4 -24 V -0.9 "2 -0.001 -1.5 "100 -100 -1 mA nA Symbol Test Condition Min Typ Max Unit On-State Drain Currenta ID(on) Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea -75 mA VDS = -2.5 V, ID = -50 mA IS = -50 mA, VGS = 0 V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss MHz VDS = -5.0 V, VGS = 0 V, f = 1 MH 50 V V VDS = -5.0 V, VGS = -4.5 V ID = -100 mA 50V 4 5 V, 100 A 350 25 125 20 14 5 pF F 450 pC C Switchingb, c Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = -3.0 V, RL = 100 W 3 0 V, ID = -0.25 A, VGEN = -4.5 V RG = 10 W 0 25 A 4 5 V, 7 25 19 9 12 35 ns 30 15 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design only, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.siliconix.com S FaxBack 408-970-5600 2 Document Number: 70869 S-58611--Rev. A, 19-Jul-99 TP0205A/AD New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.2 5V 0.4 4.5 V 0.8 4V 3.5 V 3V 2.5 V 2V 0 0 1 2 3 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 I D - Drain Current (A) 25_C 0.3 125_C 0.2 0.5 TC = -55_C Vishay Siliconix Transfer Characteristics 1.0 I D - Drain Current (A) 0.6 0.4 0.2 0.1 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 8 45 Capacitance r DS(on) - On-Resistance ( W ) 36 C - Capacitance (pF) 6 VGS = 2.5 V 4 VGS = 4.5 V 2 27 Ciss 18 Coss 9 Crss 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 3 6 9 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 80 mA Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 180 m A 6 r DS(on) - On-Resistance (W) (Normalized) 200 300 400 500 600 8 1.4 1.2 4 1.0 2 0.8 0 0 100 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (pC) TJ - Junction Temperature (_C) Document Number: 70869 S-58611--Rev. A, 19-Jul-99 www.siliconix.com S FaxBack 408-970-5600 3 TP0205A/AD Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1 TJ = 150_C r DS(on) - On-Resistance ( W ) I S - Source Current (A) 6 On-Resistance vs. Gate-to-Source Voltage 5 0.1 4 ID = 180 mA 3 0.01 TJ = 25_C 2 1 0.001 0.00 0.5 01 1.5 0 1 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.3 ID = 50 mA 0.2 V GS(th) Variance (V) 0.1 0.0 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 TJ - Temperature (_C) www.siliconix.com S FaxBack 408-970-5600 4 Document Number: 70869 S-58611--Rev. A, 19-Jul-99 |
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