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| VP2020L, BSS92 Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number VP2020L BSS92 V(BR)DSS Min (V) -200 -200 rDS(on) Max (W) 20 @ VGS = -4.5 V 20 @ VGS = -10 V VGS(th) (V) -0.8 to -2.5 -0.8 to -2.8 ID (A) -0.12 -0.15 FEATURES D D D D D High-Side Switching Secondary Breakdown Free: -220 V Low On-Resistance: 11.5 W Low-Power/Voltage Driven Excellent Thermal Stability BENEFITS D D D D D Ease in Driving Switches Full-Voltage Operation Low Offset Voltage Easily Driven Without Buffer No High-Temperature "Run-Away" APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Power Supply, Converters D Motor Control D Switches TO-226AA (TO-92) S 1 TO-92-18CD (TO-18 Lead Form) S 1 G 2 D 2 D 3 G 3 Top View VP2020L Top View BSS92 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70210 S-00199--Rev. D, 21-Feb-00 www.Vishay Siliconix.com S FaxBack 408-970-5600 TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg VP2020L -200 "20 -0.12 -0.08 -0.48 0.8 0.32 156 -55 to 150 BSS92 -200 "20 -0.15 -0.09 -0.6 1.0 0.4 125 Unit V A W _C/W _C 11-1 VP2020L, BSS92 Vishay Siliconix SPECIFICATIONSa Limits VP2020L BSS92 Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Symbol Test Conditions Typb Min Max Min Max Unit V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = -250 mA VDS = VGS, ID = -1 mA VDS = 0 V, VGS = "20 V TJ = 125_C VDS = 0.8 x V(BR)DSS, VGS = 0 V TJ = 125_C -220 -1.9 -0.8 -2.5 "10 "50 -1 -100 -200 V -0.8 -2.8 "100 nA Zero Gate Voltage Z G Vl Drain Current IDSS VDS = -200 V, VGS = 0 V TJ = 125_C VDS = -60 V, VGS = 0 V -60 -200 -0.2 -250 11.5 15 28 15 28 170 170 -0.9 100 60 -1.2 20 40 -100 20 mA A On-State Drain Currentc ID(on) VDS = -10 V, VGS = -4.5 V VGS = -10 V, ID = -0.1 A VGS = -4.5 V, ID = -0.1 A mA Drain-Source Drain Source DiS On-Resistancec rDS(on) () TJ = 125_C VGS = -4.5 V, ID = -0.05 A TJ = 125_C VDS = -10 V, ID = -0.1 A VDS = -25 V, ID = -0.1 A IS = -0.3 A, VGS = 0 V W Forward Transconductancec T dt Diode Forward Voltage gfs VSD mS V Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = -25 V, VGS = 0 V 25 V f = 1 MHz 30 10 3 70 20 10 130 30 15 pF F Switchingd tON Turn-On Time T O Ti td(on) tr tOFF Turn-Off Time T Off Ti td(off) tf Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. VDD = -25 V, RL = 250 W 25 V ID ^ -0.1 A, VGEN = -10 V RG = 25 W 14 6 8 35 18 17 30 25 VPDQ20 10 15 ns www.Vishay Siliconix.com S FaxBack 408-970-5600 11-2 Document Number: 70210 S-00199--Rev. D, 1-Jan-00 VP2020L, BSS92 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Ohmic Region Characteristics -500 -100 Output Characteristics for Low Gate Drive -400 I D - Drain Current (mA) VGS = -10 V I D - Drain Current (mA) -6 V -5 V -4.5 V -80 VGS = -4 V -3.6 V -300 -60 -200 -4 V -100 -3 V 0 0 -1 -2 -3 -4 -5 VDS - Drain-to-Source Voltage (V) -40 -3 V -20 -2 V 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 VDS - Drain-to-Source Voltage (V) Transfer Characteristics -100 VDS = -15 V 25_C -80 I D - Drain Current (mA) r DS(on) - On-Resistance ( W ) 18 20 On-Resistance vs. Gate-to-Source Voltage 16 -60 14 ID = -0.1 A -40 12 -0.05 A -20 TJ = 125_C -55_C 10 -0.02 A 0 0 -1 -2 -3 -4 -5 VGS - Gate-Source Voltage (V) 8 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) On-Resistance 25 r DS(on)-Drain Source On-Resistance (W ) r DS(on)-Drain Source On-Resistance (Normalized) 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0 -50 -100 -150 -200 -250 -50 Normalized On-Resistance vs. Junction Temperature VGS = -4.5 V ID = -0.1 A 20 VGS = -4.5 V 15 -10 V 10 5 0 -10 30 70 110 150 VGS - Gate-Source Voltage (V) TJ - Junction Temperature (_C) Document Number: 70210 S-00199--Rev. D, 1-Jan-00 www.Vishay Siliconix.com S FaxBack 408-970-5600 11-3 VP2020L, BSS92 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Region -10.0 VDS = -5 V 100 I D - Drain Current (mA) C - Capacitance (pF) 120 VGS = 0 V f = 1 MHz Capacitance -1.0 TJ = 150_C 80 60 -0.1 25_C 125_C -55_C 40 Ciss Coss Crss 0 -10 -20 -30 -40 -50 20 -0.01 0 -1.0 -2.0 -3.0 -3.5 0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Gate Charge -12 ID = -0.1 A V GS - Gate-to-Source Voltage (V) -10 100 Load Condition Effects on Switching tf td(off) VDD = -25 V RG = 25 W VGS = 0 to -10 V -8 VDS = -100 V -6 -160 V -4 t - Switching Time (ns) 10 tr td(on) -2 0 0 0.5 1.0 1.5 2.0 2.5 Qg - Total Gate Charge (nC) 1 -10 -100 ID - Drain Current (A) -1000 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.01 Single Pulse 0.01 0.1 1.0 10 100 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) 1K 10 K t1 - Square Wave Pulse Duration (sec) www.Vishay Siliconix.com S FaxBack 408-970-5600 11-4 Document Number: 70210 S-00199--Rev. D, 1-Jan-00 |
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