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| BUZ 101 SL SPP20N05L SIPMOS (R) Power Transistor * N channel * Enhancement mode * Logic Level * Avalanche-rated * dv/dt rated * 175C operating temperature * also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 20 A RDS(on) 0.07 Package Ordering Code BUZ 101 SL TO-220 AB Q67040-S4012-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 C TC = 100 C ID A 20 14 Pulsed drain current TC = 25 C IDpuls 80 E AS Avalanche energy, single pulse ID = 20 A, V DD = 25 V, RGS = 25 L = 450 H, Tj = 25 C mJ 90 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 20 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C 20 5.5 A mJ kV/s dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 C 14 55 V W Semiconductor Group 1 29/Jan/1998 BUZ 101 SL SPP20N05L Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 C 2.7 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 40 A V GS(th) 1.2 IDSS 1.6 2 A Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 C V DS = 50 V, V GS = 0 V, Tj = 25 C V DS = 50 V, V GS = 0 V, Tj = 150 C IGSS 0.1 - 0.1 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 4.5 V, ID = 14 A V GS = 10 V, ID = 14 A 0.057 0.034 0.07 0.04 Semiconductor Group 2 29/Jan/1998 BUZ 101 SL SPP20N05L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Dynamic Characteristics Transconductance V DS 2 * ID * RDS(on)max, ID = 14 A gfs S 7 14 pF 560 700 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 170 215 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 95 120 ns Turn-on delay time V DD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 tr 15 25 Rise time V DD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 td(off) 35 55 Turn-off delay time V DD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 tf 15 25 Fall time V DD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 Qg(th) 15 25 nC Gate charge at threshold V DD = 40 V, ID 0.1 A, V GS =0 to 1 V Qg(5) 0.8 1.2 Gate charge at 5.0 V V DD = 40 V, ID = 20 A, VGS =0 to 5 V Qg(total) 15 23 Gate charge total V DD = 40 V, ID = 20 A, VGS =0 to 10 V V (plateau) 24 36 V Gate plateau voltage V DD = 40 V, ID = 20 A - 4.06 - Semiconductor Group 3 29/Jan/1998 BUZ 101 SL SPP20N05L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 C IS A 20 Inverse diode direct current,pulsed TC = 25 C ISM V SD - 80 V Inverse diode forward voltage V GS = 0 V, IF = 40 A trr 1.12 1.8 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/s Qrr 50 75 C Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/s - 0.12 0.18 Semiconductor Group 4 29/Jan/1998 BUZ 101 SL SPP20N05L Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 4 V 22 A ID 18 16 14 12 60 W 50 Ptot 45 40 35 30 10 25 20 15 10 5 0 0 20 40 60 80 100 120 140 C 180 8 6 4 2 0 0 20 40 60 80 100 120 140 C 180 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A ID 10 2 /I D ZthJC t = 28.0s p 10 0 10 -1 DS (o n) = V DS 100 s D = 0.50 10 -2 R 0.20 0.10 0.05 10 1 1 ms 10 -3 single pulse 0.02 0.01 10 ms 10 0 0 10 10 1 DC V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 29/Jan/1998 BUZ 101 SL SPP20N05L Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 45 A ID 35 f Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.22 Ptot = 55W l kji h g VGS [V] a 2.5 b c 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 0.18 RDS (on) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 a b c d 30 25 20 d d e e f g h i 15 10 5 b j k l e f gh i j VGS [V] = a 3.0 2.5 3.5 b 4.0 c 4.5 d 5.0 f e 5.5 6.0 g 6.5 h i j 7.0 8.0 10.0 c 0.02 0.00 V 5.0 0 0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4 8 12 16 20 24 28 A 36 VDS ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 s VDS2 x ID x RDS(on)max 80 A I D 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 29/Jan/1998 BUZ 101 SL SPP20N05L Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 14 A, VGS = 4.5 V 0.24 Gate threshold voltage V GS(th)= f (Tj) parameter:VGS=VDS,ID = 40A 3.0 V 2.6 VGS(th) 0.20 RDS (on) 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 -60 -20 20 60 100 C 180 98% typ 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -60 -20 20 60 100 140 V Tj max typ min 200 Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 pF C A IF 10 3 Ciss 10 1 Coss 10 2 Crss 10 0 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 1 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 29/Jan/1998 BUZ 101 SL SPP20N05L Avalanche energy EAS = f (Tj) parameter:ID=20A,VDD =25 V RGS =25 , L = 450H 100 mJ EAS Typ. gate charge VGS = (QGate) parameter: ID puls = 20 A 16 V VGS 80 70 60 50 40 30 12 10 8 0,2 VDS max 6 0,8 VDS max 4 20 10 0 20 40 60 80 100 120 140 C Tj 2 0 180 0 4 8 12 16 20 24 28 nC 34 Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 29/Jan/1998 |
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