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MJD44H11 MJD45H11
COMPLEMENTARY SILICON PNP TRANSISTORS
s s
s
SGS-THOMSON PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED
APPLICATIONS s GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIER DESCRIPTION The MJD44H11 is a silicon multiepitaxial planar NPN transistors mounted in DPAK plastic package. It is inteded for various switching and general purpose applications. The complementary PNP type is MJD45H11.
3 1
DPAK (TO-252)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CEO V EBO IC I CM P t ot T stg Tj Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c 25 C Storage Temperature Max. O perating Junction Temperature
o
Value MJD44H11 MJD45H11 80 5 8 16 20 -55 to 150 150
Uni t
V V A A W
o o
C C
For PNP types the values are intented negative.
July 1997
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MJD44H11 / MJD45H11
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 6.25
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s I C = 30 mA V CB = rated V CEO V BE = 0 V EB = 5V IC = 8 A IC = 8 A IC = 2 A IC = 4 A I B = 0.4 A I B = 0.8 A V CE = 1 V V CE = 1 V 60 40 Min. 80 10 50 1 1.5 Typ . Max. Un it V A A V V V CEO(sus ) Collector-Emitter Sustaining Voltage I CES I EBO V CE(sat ) V BE(s at) h FE Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain
Pulsed: Pulse duration = 300 s, duty cycle 2 % For PNP types the values are intented negative.
Safe Operating Area
Derating Curves
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DC Current Gain (NPN type) DC Current Gain (PNP type)
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
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MJD44H11 / MJD45H11
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
H
A
C2
C
DETAIL "A"
A1
L2
D DETAIL "A" B
=
=
3
B2
=
=
G
E
2
L4
1
=
=
A2
0068772-B
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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