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| B G A 4 2 8 , M a rc h 2 0 0 2 BGA 428 BGA428 High Gain, Low Noise Amplifier MMIC W ir e le ss S i l ic o n D is c r e t e s Never stop thinking. Edition 2002-03-26 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2002 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA428 Data sheet Revision History: Previous Version: Page 4 2002-03-26 2000-11-15 Subjects (major changes since last revision) dot size for pin 1 package marking increased For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com BGA428 High Gain, Low Noise Amplifier BGA428 Features * * * * * * * High gain, GMA=20dB at 1.8GHz Low noise figure, NF=1.4dB at 1.8GHz Prematched Ideal for GSM, DCS1800, PCS1900 Open collector output Typical supply voltage: 2.4-3V SIEGET(R)-45 technology 4 5 6 2 1 3 VPS05604 Tape loading orientation Top View 654 PGs 123 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side EHA07193 Marking on SOT-363 package (for example PGs) corresponds to pin 1 of device ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGA428 Data sheet Package SOT363 Marking PGs 4 Chip T0527 2002-03-26 BGA428 Maximum Ratings Parameter Device voltage Total Device Current3) Voltage at pin Out Current into pin In Voltage at pin GS Total power dissipation, Ts < 125C Junction temperature Operating temperature range Storage temperature range Thermal resistance: junction-soldering point Input power2) 1) Symbol VCC Itot VOut IIN VGS Ptot Tj TOP TSTG Rth JS PIN Value 4 12 4 0.5 3.5 50 150 -40 ..+85 -65 ... +150 220 8 Unit V mA V mA V mW C C C K/W dBm Notes: All Voltages refer to GND-Node 1) Ts is measured on the ground lead at the soldering point 2) Valid for a) ZL=50 and ZS=50,=VCC=2.7V, VOUT=2.7V, VGS=0.0V, GND=0.0V and b) ZL=50 and ZS=50,=VCC=0.0V, VOUT=0.0V, VGS=2.7V, GND=0.0V 3) Itot= Current into OUT + Current into VCC Electrical Characteristics at TA=25C (measured in test circuit specified in fig. 1) VCC=2.7V, Frequency=1.8GHz, unless otherwise specified Parameter Maximum available power gain Noise figure (ZS=50) Input power at 1dB gain compression Input third order intercept point Total device current Insertion loss in gain-step-mode Vcc=0.0V, VCTRL=2.7V, RCTRL=3k Symbol GMA NF P-1dB IIP3 Itot LGS min. typ. 20 1.4 -19 -9 8.2 13.5 max. Unit dB dB dBm dBm mA dB Data sheet 5 2002-03-26 BGA428 Reference Plane VCTRL RCTRL =3k GS GND OUT Bias-T Out In Bias-T IN VCC Top View 47pF 180pF 100nF 2.7V Fig.1: Test Circuit for Electrical Characteristics and S-Parameter Reference Plane 47pF VCTRL 3k GS Vcc 180pF Supply 3.9nH RFin 150pF Out 0.9pF RFout In BGA428 GND Fig. 2: Application Circuit for 1850MHz Data sheet 6/9 2002-03-26 BGA428 S-Parameter at 2.7V (see Electrical Characteristics for conditions) Freq. [GHz] 0.100 0.200 0.300 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 1.900 2.000 2.200 2.400 3.000 4.000 5.000 6.000 S11 Mag 0.6756 0.5936 0.5150 0.4587 0.4004 0.3743 0.3743 0.3816 0.3922 0.4086 0.4265 0.4314 0.4371 0.4505 0.4640 0.4935 0.5181 0.5202 0.5128 S11 Ang -31.7 -53.6 -71.4 -86.6 -110.7 -129.1 -143.0 -154.5 -164.4 -172.4 -178.9 178.8 176.1 171.2 167.2 155.9 141.2 126.9 110.0 S21 Mag 58.775 47.806 39.232 32.740 23.868 18.509 14.825 12.288 10.353 8.879 7.732 7.214 6.771 5.976 5.298 3.935 2.605 1.911 1.479 S21 Ang -19.6 -43.1 -59.5 -71.8 -89.6 -103.2 -114.5 -124.7 -134.2 -143.2 -151.4 -155.2 -159.1 -166.6 -173.5 167.0 139.2 113.6 89.9 S12 Mag 0.0005 0.0014 0.0021 0.0028 0.0042 0.0063 0.0082 0.0093 0.0110 0.0132 0.0141 0.0146 0.0150 0.0169 0.0181 0.0217 0.0282 0.0319 0.0489 S12 Ang 153.5 138.4 119.0 104.9 105.9 94.3 92.4 87.2 85.3 79.4 79.4 76.1 77.0 75.2 73.2 68.3 65.1 62.2 56.0 S22 Mag 0.9491 0.9327 0.9174 0.9035 0.8807 0.8593 0.8352 0.8116 0.7865 0.7597 0.7309 0.7199 0.7097 0.6791 0.6593 0.5925 0.5284 0.4829 0.4323 S22 Ang -3.9 -6.3 -8.3 -10.3 -14.0 -17.7 -21.4 -25.1 -28.7 -32.2 -36.0 -37.5 -39.1 -42.3 -45.6 -53.3 -64.9 -75.1 -81.7 Application Circuit Characteristics (measured in test circuit specified in fig. 2) TA=25C, Vcc=2.7V, Frequency=1.85GHz, unless otherwise specified Parameter Insertion power gain Noise Figure (ZS=50) Input Power at 1dB Gain Compression Input Third Order Intercept Point Total Device Current Insertion Loss in Gain-Step-Mode Vcc=0.0V, VCTRL=2.7V, RCTRL=3k Symbol |S21| NF P-1dB IIP3 Itot LGS 2 typ. 19 1.4 -19 -9 8.2 13.5 Unit dB dB dBm dBm mA dB The following data refers to the application circuit given in fig. 2 Data sheet 7/9 2002-03-26 BGA428 Power Gain |S21| =f(f) V = 2.7V, V =2.7V CC Out 20 2 Power Gain |S21| =f(f) V = 2.7V, V =2.7V CC Out 23 2 15 22 10 21 Insertion Gain [dB] Insertion Gain [dB] 0 1 2 3 4 5 6 5 20 0 19 -5 18 -10 17 -15 -20 16 -25 15 1.7 1.8 1.9 2 2.1 Frequency [GHz] Frequency [GHz] Off-Gain |S | =f(V ) 21 CTRL V = 0.0V, V =0.0V,R CC Out -10 -11 2 CTRL =2.7k Matching |S |,|S |=f(f) 11 22 V = 2.7V, V =2.7V CC Out 0 S22 -5 -12 1800MHz -13 S -10 11 Insertion Gain [dB] -14 -15 -16 -17 -18 1990MHz |S11|, |S22| [dB] 3.2 -15 -20 -25 -19 -20 2 2.2 2.4 2.6 2.8 3 -30 1 1.5 2 2.5 3 V CTRL [V] Frequency [GHz] Data sheet 8/9 2002-03-26 BGA428 Input Compression Point P-1dB=f(f) Device Current I=f() V =2.7V, V =2.7V CC Out 9 8.8 -16.5 -17 8.6 Input Compression Point [dBm] -17.5 8.4 VCC=2.7V -18 Device Current [mA] 8.2 8 7.8 7.6 -18.5 VCC=2.85V -19 VCC=2.4V 7.4 -19.5 7.2 -20 1800 7 -20 1850 1900 1950 2000 0 20 40 60 80 Frequency [MHz] Temperature [C] Insertion Gain |S | =f() 21 VCC=2.7V, VOut=2.7V 25 24 2 Package Outline 2 0.2 0.2 +0.1 6 5 4 0.9 0.1 0.1 max A +0.2 acc. to DIN 6784 B 23 22 21 1 f=1800MHz 2 1.3 0.1 3 0.65 0.05 0.20 M |S21|2 [dB] 0.1 0.15 +0.1 -0.05 B 0.20 M 20 19 18 17 16 15 -20 A GPS05604 f=1990MHz 0 20 40 60 80 Temperature [C] Data sheet 9/9 2002-03-26 |
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