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| N Channel MOSFET 1.0A M01N60 PIN CONFIGURATION TO-251 TO-252 FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature 1.Gate 2.Drain 3.Source ABSOLUTE MAXIMUM RATINGS RATING Drain to Current - Continuous - Pulsed Gate-to-Source Voltage - Continue - Non-repetitive Total Power Dissipation TO-251/252 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Tj = 25J (VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25[) Thermal Resistance - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8'' form 10 seconds SYMBOL VALUE ID IDM VGS VGSM PD 50 TJ, TSTG EAS c c -55 to 150 20 1.0 62.5 260 J mJ J /W J 1.0 5.0 +/-30 +/-40 UNIT A V V W JC JA TL STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 N Channel MOSFET 1.0A M01N60 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS] PARAMETERS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage CurrentForward Gate Threshhold Voltage Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Rise Time Fall Time Total Gate Charge Gate-Drain Charge Gate-Drain Charge Intemal Drain Inductance Internal Drain Inductance SYMBO MIN L V(BR)DSS 600 IDSS IGSSF VGS(th) RDS(on) Ciss Coss Crss ton toff tr tf Qg Qgd Qgs LD Ls 210 28 9 8 18 21 24 8.5 8.5 1.8 4.5 7.5 2.0 TYP MAX UNIT Vdc 1.0 0.25 100 4.0 8 mA mA nA V Ohm pF pF pF nS nS nS nS nC nC nC nH nH Ta=25J^ CONDITION VGS=0, ID=250uA VDS=600V, VGS=0 VDS=480V, VGS=0, Tj=125J VGSR=20V, VDS=0 VDS=VGS, ID=250uA VGS=10V, ID=0.6A* VDS=25V, VGS=0, f=1 MHz VDS=300V, ID=1.0A, VGS=10V, RG=18[ VDS=400V, ID=1.0A VGS=10V* Measured from the drain lead 0.25'' From package to center of die Measured from the sorce lead 0.25'' package to source bond pad SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Tum Time Reverse Recovery Time VDS ton trr 2% 1.5 ** 350 500 V nS nS Is=1.0A, VGS=0V dIS/dt = 100A/g S *Pulse Test: Pulse Width O 300g S, Duty Cycle O **Negligible, Dominated by circuit inductance STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 2 N Channel MOSFET 1.0A M01N60 N Channel MOSFET 1.0A M01N60 Page 3 |
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