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MITSUBISHI SEMICONDUCTORS
M63994P/FP
HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION M63994P/FP is high voltage Power MOSFET and IGBT module driver for half bridge applications.
PIN CONFIGURATION (TOP VIEW)
M63994P/FP
VCC 1
8 7 6 5
VB HO VS NC
FEATURES FLOATING SUPPLY VOLTAGE ................................. 600V OUTPUT CURRENT ............................................. 500mA SINGLE INPUT TYPE INTERNALLY SET DEADTIME HALF BRIDGE DRIVER UNDERVOLTAGE LOCKOUT 8 LEAD DIP/8 LEAD SOP APPLICATIONS MOSFET and IGBT inverter module driver for refrigerator, air-conditioner, washing machine, AC-servomotor and general purpose.
IN 2 GND 3 LO 4
NC:NO CONNECTION
PACKAGE TYPE (8 Lead DIP/8 Lead SOP)
8P4
8P2S
BLOCK DIAGRAM
VB
HV LEVEL SHIFT VBS UV INTER LOCK PULSE GEN RQ R S
HO
VS
IN
DEAD TIME VCC UV RQ
VCC
LO
DELAY S
GND
Sep. 2000
MITSUBISHI SEMICONDUCTORS
M63994P/FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol VB VS VHO VCC VLO VIN dVS/dt Pt Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Voltage High Side Floating Supply Offset Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Allowable Offset Supply Voltage Transient Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature On Board, Ta = 25C On Board, Ta > 25C Conditions Ratings -0.5~624 VB-24 ~ VB+0.5 VS-0.5 ~ VB+0.5 -0.5 ~ 24 VS ~ VCC+0.5 -0.5 ~ VCC+0.5 50 0.85(P)/0.6(FP) 8.5(P)/6.0(FP) 40(P)/50(FP) -20 ~ +125 -20 ~ +100 -40 ~ +125 Unit V V V V V V V/ns W mW/C C/W C C C
RECOMMENDED OPERATING CONDITIONS
Symbol VB VS VCC VIN Parameter High Side Floating Supply Voltage High Side Floating Supply Offset Voltage Low Side Fixed Supply Voltage Logic Input Voltage Test Conditions Min. VS+13.5 -5 13.5 0 Limits Typ. -- -- -- -- Max. VS+20 500 20 VCC Unit V V V V
THERMAL DERATING FACTOR CHARACTERISTICS (ABSOLUTE MAXIMUM RATINGS)
1.0 On Board
Power Dissipation Pt (W)
0.8
0.6 8 Lead DIP 0.4 8 Lead SOP 0.2
0
0
25
50
75
100
125
Ambient Temperature Ta (C)
Sep. 2000
MITSUBISHI SEMICONDUCTORS
M63994P/FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS (Ta=25C, VCC=VBS(=VB-VS)=15V, unless otherwise specified)
Symbol IFS IBS ICC VINH VINL VINHYS IINH IINL VBSUVR VBSUVT tVBSUV VCCUVR VCCUVT tVCCUV VOH VOL IOH IOL ROH ROL tDEAD tdLH tdHL tr tf Parameter Floating Supply Leakage Current VBS standby Current VCC standby Current High Level Input Threshold Voltage Low Level Input Threshold Voltage Input Hysteresis Voltage High Level Input Bias Current Low Level Input Bias Current VBS Supply UV Reset Voltage VBS Supply UV Trip Voltage VBS Supply Filter Time VCC Supply UV Reset Voltage VCC Supply UV Trip Voltage VCC Supply Filter Time High Level Output Voltage Low Level Output voltage Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On Resistance Output Low Level On Resistance Deadtime LO Turn-off to HO Turn-on & HO Turn-off to LO Turn-on Output Turn-On Propagation Delay Output Turn-Off Propagation Delay Output Turn-On Rise Time Output Turn-On Fall Time IO=0A IO=0A VO=0V, PW<10s VO=15V, PW<10s IO=200mA, ROH=(VOH-VO)/IO IO=200mA, ROL=VO/IO CL=1000pF between LO(HO) - GND(VS) CL=1000pF between LO(HO) - GND(VS) CL=1000pF between LO(HO) - GND(VS) CL=1000pF between LO(HO) - GND(VS) CL=1000pF between LO(HO) - GND(VS) VIN=15V VIN=0V Test conditions VB=VS=600V Min. -- -- -- -- -- -- -- -- 7.5 7.0 -- 7.5 7.0 -- 13.8 -- -- -- -- -- 0.50 0.7 0.2 -- -- Limits Typ. -- 500 500 11 6 5.0 75 -- 8.5 8.0 7.5 8.5 8.0 7.5 14.4 -- -0.5 0.5 40 20 0.75 1.0 0.3 75 75 Max. 1.0 750 750 -- -- -- 200 1.0 9.5 9.0 -- 9.5 9.0 -- -- 0.1 -- -- -- -- 1.00 1.3 0.4 180 180 Unit A A A V V V A A V V s V V s V V A A s s s ns ns
INPUT/OUTPUT TIMING DIAGRAM
IN
50%
50%
tf HO LO tdHL(LO) tdLH(HO) 90% 10%
tr
90% 10%
tf
90% 10%
tr
90% tDEAD(HO) tdHL(HO) tdLH(LO) 10% tDEAD(LO)
Sep. 2000
MITSUBISHI SEMICONDUCTORS
M63994P/FP
HIGH VOLTAGE HALF BRIDGE DRIVER
PERFORMANCE CURVES
ICC-VCC, IBS-VBS 0.9 0.8 0.7
ICC, IBS (mA)
VINH, VINL-VCC 18 16 VINH
ICC
VINH, VINL (V)
14 12 10 8 6 4 VINL
0.6 0.5 IBS 0.4 0.3 0.2 0.1 8 12 16 VCC, VBS (V) 20 24
2
8
12
16 VCC (V)
20
24
tdHL, tdLH-VCC 1.4 1.2 tdLH
tdHL, tdLH (S)
tdead-VCC 1.1 1.0 0.9
tdead (S)
1.0 0.8 0.6 0.4 tdHL 0.2 8 12 16 VCC (V) 20 24
0.8 0.7 0.6 0.5 0.4 8 12 16 VCC (V) 20 24
VOH-VCC 25 4.0 3.5 20 ILO=0mA 3.0
VOL (V)
VOL-VCC
VOH (V)
15
2.5 2.0 1.5 1.0 0.5
ILO=200mA
10 ILO=-20mA 5 0 ILO=-200mA 8 12 16 VCC (V) 20 24
ILO=20mA ILO=0mA 8 12 16 VCC (V)
Sep. 2000
0
20
24
MITSUBISHI SEMICONDUCTORS
M63994P/FP
HIGH VOLTAGE HALF BRIDGE DRIVER
IFS-Ta 50 0.8 0.7 40 0.6 IFS (A) 30 ICC, IBS (mA) 0.5 0.4 0.3 10 0.2 0 -50 -25 0 25 50 75 100 125 0.1 -50 -25 0
ICC, IBS-Ta
ICC
20
IBS
25
50
75
100 125
Ta (C)
Ta (C)
VCCUVT, VCCUVR-Ta 9.5 VCCUVR VINH, VINL (V) 12 11
VINH, VINL-Ta
VCCUVT, VCCUVR (V)
9.0
VINH 10 9 8 7 VINL 6 5 -50 -25
8.5
8.0
VCCUVT
7.5
7.0 -50 -25
0
25
50
75
100 125
0
25
50
75
100 125
Ta (C)
Ta (C)
tdHL, tdLH-Ta 2.0 1.6 1.4 tdLH 1.2 tdead (S) 1.2 1.0 0.8 0.4 tdHL 0 -50 -25 0 25 50 75 100 125 0.6 0.4 -50 -25
tdead-Ta
1.6 tdHL, tdLH (S)
0.8
0
25
50
75
100 125
Ta (C)
Ta (C)
Sep. 2000
MITSUBISHI SEMICONDUCTORS
M63994P/FP
HIGH VOLTAGE HALF BRIDGE DRIVER
VOH-Ta 16 ILO=0mA 12 ILO=-20mA 4 6 5
VOL-Ta
VOH (V)
VOL (V)
ILO=200mA
8 ILO=-200mA 4
3 2 ILO=20mA 1 ILO=0mA
0 -50 -25
0
25
50
75
100 125
0 -50 -25
0
25
50
75
100 125
Ta (C)
Ta (C)
Sep. 2000
MITSUBISHI SEMICONDUCTORS
M63994P/FP
HIGH VOLTAGE HALF BRIDGE DRIVER
LOGIC SEQUENCE
VCCUVTRIP VCC
VCCUVRESET
delay (tUV) VBS VBSUVTRIP delay (tUV) IN VBSUVRESET
delay (tUV)
HO
LO
1. INPUT/OUTPUT LOGIC : HO has positive logic with reference to IN. LO has negative logic with reference to IN. 2. LOGIC DURING UV(VCC, VBS)ERROR
Error Signal HO LO
UV error (VCC)
LO is locked at "L" level as long as UV error for VCC is HO outputs "L" level as long as UV error for VCC is detected. detected. After VCC exceeds VCCUVRESET level, the lock for LO is HO responds to IN if VCC exceeds VCCUVRESET level. removed following an "H" state of the IN signal, and then LO responds to the input. HO is locked at "L" level as long as UV error for VBS is detected. After VBS exceeds VBSUVRESET level, the lock for HO is removed following an "L" state of the IN signal, and then HO responds to the input.
UV error (VBS)
LO is independent of VBS to respond to IN.
Sep. 2000
MITSUBISHI SEMICONDUCTORS
M63994P/FP
HIGH VOLTAGE HALF BRIDGE DRIVER
PACKAGE OUTLINE
8P4
EIAJ Package Code DIP8-P-300-2.54 JEDEC Code - Weight(g) 0.5 Lead Material Cu Alloy
Plastic 8pin 300mil DIP
c e1 E
8
5
1
4
D Symbol A A1 A2 b b1 b2 c D E e e1 L
A A2
L
b1 b e b2
8P2S-A
EIAJ Package Code SOP8-P-225-1.27 JEDEC Code - Weight(g) 0.07 Lead Material Cu Alloy
A1
SEATING PLANE
Dimension in Millimeters Min Nom Max 4.5 - - 0.51 - - 3.3 - - 0.4 0.5 0.6 1.4 1.5 1.8 0.9 1.0 1.3 0.22 0.27 0.34 8.9 9.1 8.7 6.15 6.3 6.45 - 2.45 - - 7.62 - - 3.0 - 0 15 -
Plastic 8pin 225mil SOP
e
b2
8
5
HE
E
e1
Recommended Mount Pad F A D A2 b e y
L1 L
1
4
Symbol A A1 A2 b c D E e HE L L1 y b2 e1 I2
A1
c Detail F
Dimension in Millimeters Min Nom Max - - 1.9 0.05 - - - 1.5 - 0.35 0.4 0.5 0.13 0.15 0.2 4.8 5.0 5.2 4.2 4.4 4.6 - 1.27 - 5.9 6.2 6.5 0.2 0.4 0.6 - 0.9 - - - 0.1 0 - 10 - 0.76 - - 5.72 - 1.27 - -
I2
Sep. 2000

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