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| Darlington Phototransistors PNA2602M Darlington Phototransistor Unit : mm o3.50.2 4.80.3 2.4 2.4 4.50.3 Not soldered For optical control systems Features Darlington output, high sensitivity 36.60.5 4.20.3 2.3 1.9 Easy to combine light emission and photodetection on same printed circuit board Small size, thin side-view type package Long lead and visible light cutoff design with PN205 2-1.12 2-0.450.15 2-0.40.15 14.5 2.95 1.0 1.2 2.20.2 2-0.60.15 2-0.450.15 1 2 2.54 R1.75 Absolute Maximum Ratings (Ta = 25C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 30 100 -25 to +80 -30 to +100 Unit V V mA mW C C 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25C) Parameter Dark current Sensitivity to infrared emitters Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage *1 Symbol ICEO SIR tr, tf*2 VCE(sat) *1 *1 Conditions VCE = 10V VCE = 10V, H = 3.75 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, IC = 1mA, RL = 100 IC = 100A, H = 3.75 W/cm2 W/cm2 min 0.1 typ max 0.5 3.0 Unit A mA nm deg. s P 850 35 150 1.5 V Measurements were made using infrared light ( = 940 nm) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,, ,, 50 RL 1 PNA2602M Darlington Phototransistors PC -- Ta 120 16 ICE(L) -- VCE 10 3 ICE(L) -- L ICE(L) (mA) VCE = 10V Ta = 25C T = 2856K PC (mW) 100 ICE(L) (mA) PC = 100mW L = 50 lx 12 30 lx Ta = 25C T = 2856K 10 2 Collector power dissipation 80 Collector photo current Collector photo current 60 8 20 lx 10 40 4 10 lx 5 lx 2 lx 1 20 0 - 20 0 20 40 60 80 100 0 0 4 8 12 16 20 24 10 -1 1 10 10 2 10 3 Ambient temperature Ta (C ) Collector to emitter voltage VCE (V) Illuminance L (lx) ICE(L) -- Ta 10 VCE = 10V T = 2856K 10 2 ICEO -- Ta 100 VCE = 10V Spectral sensitivity characteristics VCE = 10V Ta = 25C ICE(L) (mA) 10 1 ICEO (A) Collector photo current 10 -1 Relative sensitivity 0 20 40 60 80 100 1 S (%) 10 -2 10 -3 - 20 80 60 Dark current 40 10 -1 20 10 -2 - 40 0 40 80 120 0 600 700 800 900 1000 1100 1200 Ambient temperature Ta (C ) Ambient temperature Ta (C ) Wavelength (nm) Directivity characteristics 0 100 Sig.IN 90 80 70 60 50 40 30 20 10 20 tr -- ICE(L) VCC Sig. OUT RL 90% 10% Sig.IN Sig. OUT 50 tf -- ICE(L) VCC Sig. OUT RL 90% 10% Relative sensitivity S (%) ,, , 30 tr (s) 40 50 60 70 80 90 Rise time Fall time 10 3 tf (s) RL = 1k 500 , 10 3 10 2 10 10 -2 10 -1 Sig. OUT 50 tr td tf tr td tf RL = 1k 500 100 10 2 100 VCC = 10V Ta = 25C 10 -1 1 10 10 10 -2 VCC = 10V Ta = 25C 1 10 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 2 |
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