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Features
* * * * * *
No External Components Except PIN Diode Supply-voltage Range: 4.5 V to 5.5 V Automatic Sensitivity Adaptation (AGC) Automatic Strong Signal Adaptation (ATC) Enhanced Immunity Against Ambient Light Disturbances Available for Carrier Frequencies between 30 kHz to 76 kHz; Adjusted by Zener Diode Fusing * TTL and CMOS Compatible * Suitable Minimum Burst Length 6 or 10 Pulses/Burst
Applications
* Audio Video Applications * Home Appliances * Remote Control Equipment
IR Receiver ASSP T2525
Description
The IC T2525 is a complete IR receiver for data communication developed and optimized for use in carrier-frequency-modulated transmission applications. Its function can be described using the block diagram (see Figure 1). The input stage meets two main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a Controlled Gain Amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental condition (ambient light, modulated lamps etc.). Other special features are used to adapt to the current application to secure best transmission quality. The T2525 operates in a supply-voltage range of 4.5 V to 5.5 V. Figure 1. Block Diagram
VS
IN Input CGA and filter Demodulator
OUT
Microcontroller
Oscillator
Carrier frequency f0
AGC/ATC and digital control
Modulated IR signal min 6/10 pulses
GND
Rev. 4657D-AUTO-11/03
Pin Configuration
Figure 2. Pinning SO8 and TSSOP8
VS NC OUT NC 1 2 3 4 8 7 6 5 NC NC GND IN
Pin Description
Pin 1 2 3 4 5 6 7 8 Symbol VS NC OUT NC IN GND NC NC Function Supply voltage Not connected Data output Not connected Input PIN diode Ground Not connected Not connected
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Supply voltage Supply current Input voltage Input DC current at VS = 5 V Output voltage Output current Operating temperature Storage temperature Power dissipation at Tamb = 25C Symbol VS IS VIN IIN VO IO Tamb Tstg Ptot Value -0.3 to +6 3 -0.3 to VS 0.75 -0.3 to VS 10 -25 to +85 -40 to +125 30 Unit V mA V mA V mA C C mW
Thermal Resistance
Parameter Junction ambient SO8 Junction ambient TSSOP8 Symbol RthJA RthJA Value 130 TBD Unit K/W K/W
2
T2525
4657D-AUTO-11/03
T2525
Electrical Characteristics
Tamb = 25C, VS = 5 V unless otherwise specified.
No. 1 1.1 1.2 2 2.1 2.2 2.3 2.4 3 3.1 3.2 Parameters Supply Supply-voltage range Supply current Output Internal pull-up resistor(1) Output voltage low Output voltage high Output current clamping Input Input DC current Input DC current; Figure 4 on page 5 VIN = 0; see Figure 9 on page 7 VIN = 0; Vs = 5 V, Tamb = 25C Test signal: see Figure 8 on page 7 VS = 5 V, Tamb = 25C, IIN_DC = 1 A; square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 8 on page 7; BER = 50(2) 5 5 IIN_DCMAX IIN_DCMAX -85 -530 -960 A A C B R2 = 0; see Figure 9 on page 7 Tamb = 25C; see Figure 9 on page 7 IL = 2 mA; see Figure 9 on page 7 1,3 3,6 3,1 3,6 RPU VOL VOH IOCL VS - 0.25 8 30/40 250 Vs kW mV V mA A B B B IIN = 0 1 1 VS IS 4.5 0.8 5 1.1 5.5 1.4 V mA C B Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
3.3
Minimum detection threshold current; Figure 3 on page 5
3
IEemin
-520
pA
B
3.4
Test signal: see Figure 8 on page 7 VS = 5 V, Minimum detection Tamb = 25C, threshold current with IIN_DC = 1 A, AC current disturbance square pp, IIN_AC100 = 3 A at burst N = 16, 100 Hz f = f0; tPER = 10 ms, Figure 8 on page 7; BER = 50%(2)
3
IEemin
-800
pA
C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see "Ordering Information" 2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage
3
4657D-AUTO-11/03
Electrical Characteristics (Continued)
Tamb = 25C, VS = 5 V unless otherwise specified.
No. Parameters Test Conditions Test signal: see Figure 8 on page 7 VS = 5 V, Tamb = 25C, IIN_DC = 1 A; square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 8 on page 7; BER = 5%(2) Pin Symbol Min. Typ. Max. Unit Type*
3.5
Maximum detection threshold current with VIN > 0V
3
IEemax
-400
A
D
4 4.1 4.2 4.3 4.4 4.5
Controlled Amplifier and Filter Maximum value of variable gain (CGA) Minimum value of variable gain (CGA) Total internal amplification(3) Center frequency fusing VS = 5 V, Tamb = 25C accuracy of bandpass Overall accuracy center frequency of bandpass BPF bandwidth: type N0 - N3 BPF bandwidth: type N6, N7 -3 dB; f0 = 38 kHz; see Figure 6 on page 6 -3 dB; f0 = 38 kHz Figure 6 on page 6 GVARMAX GVARMIN GMAX f0_FUSE f0 B B -3 -6.7 51 -5 71 f0 f0 3.5 5.4 +3 +4.1 dB dB dB % % kHz kHz D D D A C C C
4.6
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see "Ordering Information" 2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage
ESD Reliability
All pins 2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7 Electrical qualification (1000h) in molded SO8 plastic package
4
T2525
4657D-AUTO-11/03
T2525
Typical Electrical Curves at Tamb = 25C
Figure 3. IEemin versus IIN_DC , VS = 5 V
Figure 4. VIN versus IIN_DC, VS = 5 V
Figure 5. Data Transmission Rate, VS = 5 V
5
4657D-AUTO-11/03
Figure 6. Typical Bandpass Curve
Q = f0/Df; Df = -3 dB values. Example: Q = 1/(1.047 - 0.954) = 11
Figure 7. Illustration of Used Terms
1066 s Burst (N=16 pulses) Period (P=16)
533 s IN 1 7 16
7
7
33 s OUT tDON tDOFF 533 s Envelope 1 Envelope 16
17056 s/data word OUT Telegram pause Data word Data word
17 ms TREP = 62 ms t
Example: f = 30 kHz, burst with 16 pulses, 16 periods
6
T2525
4657D-AUTO-11/03
T2525
Figure 8. Test Circuit
D U1/400K VDD = 5 V
IEe =
DU1 400k IIN_DC
1 nF
R1 = 220
20k IIN IEe VPULSE 1 nF DU2 IN
VS T2525 GND OUT
~
20k f0 16 IIN_AC100 DC + tPER = 10 ms
IIN_DC = DU2/40k
C1 4.7 F
Figure 9. Application Circuit
VDD = 5 V (1) optional
R1 = 220
R2(1) > 2.4k
IS VS IN IIN GND
RPU
T2525
IOCL OUT IL
Microcontroller
VIN IIN_DC IEe C1 = 4.7 F
VO C2 (1) = 470 pF
7
4657D-AUTO-11/03
Chip Dimensions
Figure 10. Chip Size in m
1130,1030 GND 351,904 723,885 scribe IN
VS
length
63,660 T2525
63,70 OUT
FUSING
0,0
width
Note:
Pad coordinates are for lower left corner of the pad in m from the origin 0,0
Dimensions
Length inclusive scribe Width inclusive scribe Thickness Pads Fusing pads
1.15 mm 1.29 mm 290 5% 90 90 70 70 AlCu/AlSiTi(1) 0.8 m Si3N4/SiO2 0.7/0.3 m
Pad metallurgy
Material Thickness
Finish
Material Thickness
Note:
1. Value depends on manufacture location.
8
T2525
4657D-AUTO-11/03
T2525
Ordering Information
Extended Type Number T2525N0xx(1)-yyy(5) T2525N1xx(1)-DDW T2525N2xx(1)-yyy(5) T2525N3xx(1)-DDW T2525N6xx(1)-yyy(5) T2525N7xx -DDW Notes: 1. 2. 3. 4. 5.
(1)
PL(2) 2 1 2 1 2 1
RPU(3) 30 30 40 40 30 30
D(4) 2090 2090 1373 1373 3415 3415
Type Standard type: 10 pulses, enhanced sensibility, high data rate Standard type: 10 pulses, enhanced sensibility, high data rate Lamp type: 10 pulses, enhanced suppression of disturbances, secure data transmission Lamp type: 10 pulses, enhanced suppression of disturbances, secure data transmission Short burst type: 6 pulses, enhanced data rate Short burst type: 6 pulses, enhanced data rate
xx means the used carrier frequency value f0 30,33,36,38,40,44 ,56 kHz.(76 kHz type on request) Two pad layout versions (see Figure 11 and Figure 12) available for different assembly demand Integrated pull-up resistor at pin OUT (see "Electrical Characteristics") Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5 V (see Figure 5 on page 5) yyy means kind of packaging: .................... .......DDW -> unsawn wafers in box .................... .......6AQ -> (only on request, TSSOP8 taped and reeled)
Pad Layout
Figure 11. Pad Layout 1 (DDW only)
GND IN
OUT T2525
VS
FUSING
Figure 12. Pad Layout 2 (DDW, SO8 or TSSOP8)
(6) GND (5) IN
(1) VS
T2525
(3)
OUT
FUSING
9
4657D-AUTO-11/03
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4657D-AUTO-11/03

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