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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1763 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The PA1763 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters. PACKAGE DRAWING (Unit : mm) 8 5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 0.3 4.4 +0.10 -0.05 FEATURES * Dual chip type * Low on-resistance RDS(on)1 = 47.0 m MAX. (VGS = 10 V, ID = 2.3 A) RDS(on)2 = 57.0 m MAX. (VGS = 4.5 V, ID = 2.3 A) RDS(on)3 = 66.0 m MAX. (VGS = 4.0 V, ID = 2.3 A) * Low input capacitance Ciss = 870 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8) 1.8 MAX. 5 5 5 5 1 4 5.37 MAX. 1.44 0.8 0.15 0.05 MIN. 0.5 0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 PA1763G ABSOLUTE MAXIMUM RATINGS (TA = 25 C, All terminals are connected.) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 Note2 Note2 VDSS VGSS ID(DC) ID(pulse) PT PT IAS EAS Tch Tstg 60 20 4.5 18 1.7 2.0 4.5 60 150 -55 to + 150 V V A A W W A mJ C C Gate Protection Diode Source Gate Body Diode EQUIVALENT CIRCUIT (1/2 Circuit) Drain Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) 5 5 Single Avalanche Current Single Avalanche Energy Channel Temperature Storage Temperature Note3 Note3 5 Notes 1. PW 10 s, Duty cycle 1 % 2 2. TA = 25 C, Mounted on ceramic substrate of 1200 mm x 2.2 mm 3. Starting Tch = 25 C, RG = 25 , VGS = 20 V 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage Exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14056EJ1V0DS00 (1st edition) Date Published January 2000 NS CP(K) Printed in Japan The mark 5 shows major revised points. (c) 1999, 2000 PA1763 5 ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected.) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 2.3 A VGS = 4.5 V, ID = 2.3 A VGS = 4.0 V, ID = 2.3 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.3 A VDS = 60 V, VGS = 0 V VGS = 16 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 2.3 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 4.5 A VDD = 48 V VGS = 10 V IF = 4.5 A, VGS = 0 V IF = 4.5 A, VGS = 0 V di/dt = 100 A/s 870 150 80 11 40 50 12 20 3 5 0.80 30 40 1.5 3.0 MIN. TYP. 37.0 45.0 49.0 2.0 6.0 10 10 MAX. 47.0 57.0 66.0 2.5 UNIT m m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V 50 TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG RG = 10 VGS RL VDD ID 90 % 90 % ID VGS Wave Form 0 10 % VGS(on) 90 % BVDSS IAS ID VDD VDS VGS 0 = 1 s Duty Cycle 1 % ID Wave Form 0 10 % td(on) ton tr td(off) toff 10 % tf Starting Tch 5 TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 RL VDD 2 Data Sheet G14056EJ1V0DS00 PA1763 5 TYPICAL CHARACTERISTICS (TA = 25C, All terminals are connected.) FORWARD TRANSFER CHARACTERISTICS 100 Pulsed VDS = 10 V 30 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed ID - Drain Current - A 10 ID - Drain Current - A TA = 150 C 1 TA = 75 C TA = 25 C 0.1 0.01 TA = -25 C 25 20 15 10 5 VGS = 4.0 V VGS = 10 V VGS = 4.5 V 0.001 0 - 1.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V |yfs| - Forward Transfer Admittance - S 100 VDS = 10 V Pulsed TA = -25 C RDS(on) - Drain to Source On-state Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 200 Pulsed 180 160 140 120 100 80 60 40 20 0 0 5 ID = 2.3 A 10 15 ID = 4.5 A 10 TA = 25 C TA = 75 C 1 TA = 150 C 0.1 0.1 1 10 100 ID - Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On - state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V 0.12 0.1 VGS = 4.0 V 0.08 0.06 0.04 0.02 0 0.1 Pulsed 3 2.5 2 1.5 1 0.5 0 - 75 - 50 - 25 VDS =10 V ID = 1 mA VGS = 4.5 V VGS = 10 V 1 10 ID = 2.3 A 100 0 25 50 75 100 125 150 175 ID - Drain Current - A Tch - Channel Temperature - C Data Sheet G14056EJ1V0DS00 3 PA1763 RDS(on) - Drain to Source On-state Resistance - m IF - Diode Forward Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 Pulsed VGS = 4.0 V 90 80 VGS = 4.5 V 70 60 50 40 30 20 10 - 50 - 25 0 ID = 2.3 A 25 50 75 100 125 150 175 200 VGS = 10 V SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 VGS = 10 V 10 VGS = 0 V Pulsed 1 0.1 0.01 0.00 0.50 1.00 1.50 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 1000 VGS = 0 V f = 1 MHz 1000 Ciss SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF tr 100 tf VDS = 30 V VGS = 10 V RG = 10 td(off) td(on) 100 Coss 10 Crss 10 1 1 0.1 1 10 100 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A/s VGS = 0 V 1000 ID = 6.0 A 10 VDD = 48 V VDD = 30 V VDD = 12 V 8 VGS 6 4 2 VDS 2 4 6 8 10 12 14 16 18 20 0 100 35.0 30.0 25.0 20.0 15.0 10.0 5.0 0 0 10 1 0.1 1 10 100 ID - Drain Current - A QG - Gate Charge - nC 4 Data Sheet G14056EJ1V0DS00 VGS - Gate to Source Voltage - V 10000 60.0 55.0 50.0 45.0 40.0 12 PA1763 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W/package 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80 2 unit 1 unit dT - Percentage of Rated Power - % 100 80 60 40 20 Mounted on ceramic substrate 2of 1200 mm x 2.2 mm 0 20 40 60 80 100 120 140 160 100 120 140 160 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ceramic substrate of 1200mm2 x 2.2 mm, 1 unit ) L 0V on S( = 1 RD GS ID - Drain Current - A d ite im ) ID(pulse) PW 10 (V ID(DC) PW PW =1 0 s =1 0 Po we r 1 PW =1 m m s =1 0m Di 00 s ss ipa s tio n 0.1 0.1 TA = 25 C Single Pulse Lim ite d 100 1 10 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W 1000 Rth(ch-A) = 73.5C/W 100 10 1 0.1 Mounted on ceramic substrate of 1200mm2 x 2.2 mm Single Pulse, 1 unit 0.01 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G14056EJ1V0DS00 5 PA1763 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 SINGLE AVALANCHE ENERGY DERATING FACTOR 120 RG = 25 VDD = 30 V VGS = 20 V IAS 4.5 A IAS - Single Avalanche Current - A Energy Derating Factor - % RG = 25 VDD = 30 V VGS = 20 V 0 V Starting Tch = 25 C 100 80 60 40 20 0 25 0V 10 IAS = 4.5 A EAS = 60 mJ 1 10 100 1m 10m 50 75 100 125 150 L - Inductive Load - H Starting Tch - Starting Channel Temperature - C 6 Data Sheet G14056EJ1V0DS00 PA1763 [MEMO] Data Sheet G14056EJ1V0DS00 7 PA1763 * The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8 |
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