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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3057
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3057 PACKAGE Isolated TO-220
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching application.
FEATURES
* Low on-state resistance RDS(on)1 = 17 m MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 27 m MAX. (VGS = 4 V, ID = 23 A) * Low Ciss: Ciss = 2100 pF TYP. * Built-in gate protection diode * Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg
Note2 Note2
60 20 +20, -10 45 150 30 2.0 150 -55 to +150 22.5 50.6
V V V A A W W C C A mJ
Total Power Dissipation (Tc = 25C) Total Power Dissipation (Ta = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1 % 2. Starting Tch = 25 C, RG = 25 , VGS = 20 V0
THERMAL RESISTANCE
Channel to Case Channel to Ambient Rth(ch-c) Rth(ch-a) 4.17 62.5 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13096EJ1V0DS00 (1st edition) Date Published March 1999 NS CP(K) Printed in Japan
(c)
1998
2SK3057
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 23 A VGS = 4 V, ID = 23 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 23 A VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 23 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 45 A VDD = 48 V VGS(on) = 10 V IF = 45 A, VGS = 0 V IF = 45 A, VGS = 0 V di/dt = 100 A / s 2100 550 220 35 410 120 200 45 7.0 13 1.0 60 100 1.0 13 MIN. TYP. 12 17 1.6 42 10 10 MAX. 17 27 2.0 UNIT m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG RG = 10
VGS RL VDD ID
90 % 90 % ID
VGS
Wave Form
0
10 %
VGS(on)
90 %
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
0
10 % td(on) ton tr td(off) toff
10 % tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D13096EJ1V0DS00
2SK3057
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
20 40 60 80 100 120 140 160
100 80 60 40 20
60 50 40 30 20 10 0 20 40 60 80 100 120 140 160
0
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 1000
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 100
ID - Drain Current - A
=1 s
ID - Drain Current - A
ID(pulse)
PW 10 1m
VGS = 10 V
100
RD
S( on )
d ite Lim ID(DC)
0
s
80 60 40 20
0
DC
10
Di
ss
10 ipa tio n 10 Lim ite 0m s
s
VGS = 4 V
m
s
1 0.1
TC = 25C Single Pulse 1
d
10
100
0
1
2
3
4
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 100
ID - Drain Current - A
10
1
TA = 125C 75C 25C -25C
0.1 Pulsed VDS = 10 V 4 5
0
1
2
3
VGS - Gate to Source Voltage - V
Data Sheet D13096EJ1V0DS00
3
2SK3057
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-a)= 62.5 C/W
10 Rth(ch-c)= 4.17 C/W 1
0.1
0.01 Single Pulse 0.001 10 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
| yfs | - Forward Transfer Admittance - S
100 Tch = -25C 25C 75C 10 125C
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 70 60 50 40 30 20 10 ID = 30 A 0 10 20 30 Pulsed
1
0.1 0.1
VDS = 10 V Pulsed 1.0 10 100
ID - Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 Pulsed
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
2.0
VDS = 10 V ID = 1 mA
60
1.5
40
1.0
20
VGS = 4 V VGS = 10 V
0.5
0 0.1
0
1
10
100
-50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D13096EJ1V0DS00
2SK3057
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 VGS = 4 V 100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
ISD - Diode Forward Current - A
VGS = 10 V 10
30 VGS = 10 V 20
1 VGS = 0 V 0.1 0 0.5 1 Pulsed 1.5
10 ID = 20 A -50 0 50 100 150
0
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100
SWITCHING CHARACTERISTICS
Ciss, Coss, Crss - Capacitance - pF
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 f = 1 MHz
10000
VDD = 30 V VGS = 10 V RG = 10
10
1000
tr tf td(off)
Ciss 1 Coss 0.1 0.1 Crss 1 10 100
100 td(on) 10 0.1 1 10 100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
VDS - Drain to Source Voltage - V
60 VDD = 12 V 30 V 48 V 40
12 10 8 6
100
10
20
4 2
1 0.1
1
10
100
0
20
40
60
80
0
IF - Drain Current - A
QG - Gate Charge - nC
Data Sheet D13096EJ1V0DS00
VGS - Gate to Source Voltage - V
trr - Reverse Recovery Time - ns
di/dt = 100 A /s VGS = 0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 16 ID = 45 A VGS = 10 V 14
5
2SK3057
SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100 160 140 IAS = 22.5 A 10
SINGLE AVALANCHE ENERGY DERATING FACTOR
VDD = 30V RG = 25 VGS = 20 V 0 V IAS 22.5A
IAS - Single Avalanche Energy - mJ
Energy Derating Factor - %
10 m
120 100 80 60 40 20
EAS
=5
0.6
mJ
1.0 RG = 25 VDD = 30 V VGS = 20 V 0 Starting Tch = 25 C 0.1 10 100
1m
0 25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
PACKAGE DRAWING (Unit : mm)
Isolated TO-220 (MP-45F)
10.0 0.3
3.2 0.2
4.5 0.2 2.7 0.2
EQUIVALENT CIRCUIT
15.0 0.3 3 0.1 12.0 0.2
Drain (D)
4 0.2
13.5MIN.
Gate (G) Gate Protection Diode Source (S)
Body Diode
0.7 0.1 2.54
1.3 0.2 2.5 0.1 0.65 0.1 1.5 0.2 2.54 1.Gate 2.Drain 3.Source 123
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
6
Data Sheet D13096EJ1V0DS00
2SK3057
[MEMO]
Data Sheet D13096EJ1V0DS00
7
2SK3057
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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