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CED6060R/CEU6060R
Feb. 2003
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
6
60V , 30A , RDS(ON)=25m @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package.
D G S
G D S
D
G
CEU SERIES TO-252AA(D-PAK)
CED SERIES TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TJ=125 C -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 60 20 30 120 30 50 0.3 -55 to 175 Unit V V A A A W W/ C C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA
6-42
3 50
C/W C/W
CED6060R/CEU6060R
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current
Symbol
a
Condition
VDD =25V, L = 25H RG =25
Min Typ Max Unit
DRAIN-SOURCE AVALANCHE RATING
EAS IAS
200 30
mJ A
6
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS
b
VGS = 0V, ID = 250A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 24A VGS = 10V, VDS = 10V VDS = 10V, ID = 24A VDD = 30V, ID = 30A, VGS = 10V, RGEN= 7.5
60 25
V A 100 nA
ON CHARACTERISTICS a
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 2 4 25 60 20 15 45 36 VDS =48V, ID = 30A, VGS =10V
6-43
V m A S
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Qgs Qgd
20 60 43
ns ns ns ns nC nC nC
250 300 130 150 9 19
CED6060R/CEU6060R
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter DYNAMIC CHARACTERISTICSb
Input Capacitance CISS COSS CRSS
Symbol
Condition
Min Typ Max Unit
1178 428 95
PF PF PF
6
Output Capacitance Reverse Transfer Capacitance
VDS =25V, VGS = 0V f =1.0MHZ
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage VSD VGS = 0V, Is =24A 0.9 1.3 V
Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing.
40 VGS=10,8,7V 35 6V
40 TJ=125 C 25 C 30
ID, Drain Current(A)
25 VGS=5V 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 4V
ID, Drain Current (A)
30
20
10 -55 C 0 2 3 4 5 6 7 8
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
6-44
CED6060R/CEU6060R
1800 3.0
RDS(ON), Normalized Drain-Source On-Resistance
VGS=10V 2.5 2.0 Tj=125 C 1.5 25 C 1.0 0.5 0 -55 C
1500
C, Capacitance (pF)
1200 900 600
Ciss
Coss 300 Crss 0 0 10 15 20 25 30
0
10
20
30
40
50
6
VDS, Drain-to Source Voltage (V)
ID, Drain Current(A)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250 A
Vth, Normalized Gate-Source Threshold Voltage
1.15 1.10 1.05 1.0 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation with Temperature
50
Figure 6. Breakdown Voltage Variation with Temperature
100
gFS, Transconductance (S)
30 20 10 VDS=10V 0 0 10 20 30 40
Is, Source-drain current (A)
40
10
1 0.4
0.6
0.8
1.0
1.2
1.4
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation with Drain Current 6-45
Figure 8. Body Diode Forward Voltage Variation with Source Current
CED6060R/CEU6060R
15
VGS, Gate to Source Voltage (V)
300
ID, Drain Current (A)
12 9 6 3 0 0
VDS=48V ID=30A
100
R
D
S(
) ON
Lim
it
10 1m 10 0
10
s
s
s
10
VGS=10V Single Pulse Tc=25 C
ms 10 0m DC s
6
1
6
12 18
24 30
36
42
48
1
10
60 100
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 9. Gate Charge
Figure 10. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
2
r(t),Normalized Effective Transient Thermal Impedance
1 D=0.5
0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.01 PDM t1 t2 1. R JA (t)=r (t) * R JA 2. R JA=See Datasheet 3. TJM-TA = PDM* R JA (t) 4. Duty Cycle, D=t1/t2 1 10 100 1000 10000
0.1
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve 6-46

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