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(R)
IRFP450
N - CHANNEL 500V - 0.33 - 14A - TO-247 PowerMESHTM MOSFET
TYPE IRFP450
s s s s s
V DSS 500 V
R DS(on) < 0.4
ID 14 A
TYPICAL RDS(on) = 0.33 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 2 1
DESCRIPTION This power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM (*) P t ot dv/dt(1) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature
o o o
Value 500 500 20 14 8.7 56 190 1.5 3.5 -65 to 150 150
(1) ISD 14 A, di/dt 130 A/s, VDD V(BR)DSS, Tj TJMAX
Uni t V V V A A A W W/ C V/ ns
o o o
C C
(*) Pulse width limited by safe operating area
August 1998
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IRFP450
THERMAL DATA
R t hj-ca se
Rthj -amb
R thc- si nk Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
0.66 30 0.1 300
C/W oC/W o C/W o C
o
AVALANCHE CHARACTERISTICS
Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 50 V) Max Valu e 14 800 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 A V GS = 0 Min. 500 1 50 100 Typ . Max. Un it V A A nA
V DS = Max Rating Zero G ate Voltage Drain Current (VGS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = 20 V
T c = 125 C
o
ON ()
Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate Threshold Voltage V DS = VGS Test Cond ition s ID = 250 A ID = 8.4 A 14 Min. 2 Typ . 3 0.33 Max. 4 0.4 Un it V A
Static Drain-source On V GS = 10V Resistance
On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V
DYNAMIC
Symb ol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz I D = 8.4 A VGS = 0 Min. 9.3 Typ . 13 2600 330 40 Max. Un it S pF pF pF
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IRFP450
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symb ol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition s V DD = 250 V I D = 7A VGS = 10 V R G = 4.7 (see test circuit, figure 1) V DD = 400 V I D = 14A V GS = 10 V Min. Typ . 24 14 75 13.5 27 Max. Un it ns ns nC nC nC
SWITCHING OFF
Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s V DD = 400 V I D = 14 A R G = 4.7 V GS = 10 V (see test circuit, figure 3) Min. Typ . 15 25 35 Max. Un it ns ns ns
SOURCE DRAIN DIODE
Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 14 A V GS = 0 680 9 26 Test Cond ition s Min. Typ . Max. 14 56 1.4 Un it A A V ns C A
I SD = 14 A di/dt = 100 A/s o T j = 150 C V DD = 100 V (see test circuit, figure 3)
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
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IRFP450
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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IRFP450
Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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IRFP450
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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IRFP450
TO-247 MECHANICAL DATA
mm MIN. A D E F F3 F4 G H L L3 L4 L5 M Dia 2 3.55 15.3 19.7 14.2 34.6 5.5 3 3.65 0.079 0.140 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134
DIM.
P025P
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IRFP450
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. .
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