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| NPN Silicon High-Voltage Transistors MPSA 42 MPSA 43 q q q High breakdown voltage Low collector-emitter saturation voltage Complementary types: MPSA 92 MPSA 93 (PNP) 1 32 Type MPSA 42 MPSA 43 Marking MPSA 42 MPSA 43 Ordering Code 1 Q68000-A413 Q68000-A4809 E Pin Configuration 2 B 3 C Package 1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TC = 66 C 2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case 2) Symbol MPSA 42 Values MPSA 43 200 200 6 500 100 625 150 - 65 ... + 150 mW C mA V 300 300 Unit VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg Rth JA Rth JC 200 135 K/W 1) 2) For detailed information see chapter Package Outlines. Mounted on AI-heat sink 15 mm x 25 mm x 0.5 mm. Semiconductor Group 1 5.91 MPSA 42 MPSA 43 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 MPSA 42 MPSA 43 Collector-base breakdown voltage IC = 100 A, IB = 0 MPSA 42 MPSA 43 Emitter-base breakdown voltage Limit Values typ. max. Unit V(BR)CE0 300 200 - - - - - - - - - - V V(BR)CB0 300 200 IE = 100 A, IC = 0 Collector-base cutoff current VCB = 200 V VCB = 160 V VCB = 200 V, TA = 150 C VCB = 160 V, TA = 150 C Emitter-base cutoff current MPSA 42 MPSA 43 MPSA 42 MPSA 43 V(BR)EB0 ICB0 6 - - - - - - - - - 100 100 20 20 100 nA nA A A nA - IEB0 hFE - VBE = 3 V, IC = 0 DC current gain 1) IC =1 mA, VCE = 10 V IC =10 mA, VCE = 10 V IC =30 mA, VCE = 10 V Collector-emitter saturation voltage 1) IC = 20 mA, IC = 2 mA MPSA 42 MPSA 43 Base-emitter saturation voltage IC = 20 mA, IB = 2 mA AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance 25 40 40 - - - - - - - - - V - - 0.5 0.4 0.9 VCEsat VBEsat - fT Cobo - 70 - MHz pF VCB = 20 V, f = 1 MHz MPSA 42 MPSA 43 - - - - 3 4 1) Pulse test conditions: t 300 s, D 2 %. Semiconductor Group 2 MPSA 42 MPSA 43 Total power dissipation Ptot = f (TA; TC) Permissible pulse load RthJA = f (tp) TA = 25 C, D = 0 Operating range IC = f(VCE) Collector cutoff current ICB0 = f (TA) VCB = VCBmax Semiconductor Group 3 MPSA 42 MPSA 43 DC current gain hFE = f (IC) VCE = 10 V Transition frequency fT = f (IC) VCE = 20 V, f = 20 MHz, VCE = 10 V Collector current IC = f (VBE) VCE = 10 V Semiconductor Group 4 |
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