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DATA SHEET
PESDxS2UT series Double ESD protection diodes in SOT23 package
Product specification Supersedes data of 2003 Aug 20 2004 Apr 15
Philips Semiconductors
Product specification
Double ESD protection diodes in SOT23 package
FEATURES * Uni-directional ESD protection of up to two lines * Max. peak pulse power: Ppp = 330 W at tp = 8/20 s * Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A * Ultra-low reverse leakage current: IRM < 700 nA * ESD protection > 23 kV * IEC 61000-4-2; level 4 (ESD) * IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 s. APPLICATIONS * Computers and peripherals * Communication systems * Audio and video equipment * High speed data lines * Parallel ports. DESCRIPTION Uni-directional double ESD protection diodes in a SOT23 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. MARKING TYPE NUMBER PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT Note 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. MARKING CODE(1) *U9 *U1 *U2 *U3 *U4
1
PESDxS2UT series
QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse stand-off voltage diode capacitance VR = 0 V; f = 1 MHz number of protected lines PINNING PIN 1 2 3 cathode 1 cathode 2 common anode DESCRIPTION VALUE 3.3, 5.2, 12, 15 and 24 UNIT V
207, 152, 38, 32 pF and 23 2
3
1 3 2
2
001aaa490
sym022
Fig.1 Simplified outline (SOT23) and symbol.
2004 Apr 15
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Philips Semiconductors
Product specification
Double ESD protection diodes in SOT23 package
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Ppp PARAMETER peak pulse power PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT Ipp peak pulse current PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT Tj Tamb Tstg Notes 1. Non-repetitive current pulse 8/20 s exponential decay waveform; see Fig.2. 2. Measured across either pins 1 and 3 or pins 2 and 3. junction temperature operating ambient temperature storage temperature 8/20 s pulse; notes 1 and 2 CONDITIONS 8/20 s pulse; notes 1 and 2 - DESCRIPTION plastic surface mounted package; 3 leads
PESDxS2UT series
VERSION SOT23
MIN. - - - - - - - - - - - -65 -65
MAX. 330 260 180 160 160 18 15 5 5 3 150 +150 +150
UNIT W W W W W A A A A A C C C
2004 Apr 15
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Philips Semiconductors
Product specification
Double ESD protection diodes in SOT23 package
ESD maximum ratings SYMBOL ESD PARAMETER electrostatic discharge capability CONDITIONS
PESDxS2UT series
VALUE
UNIT
IEC 61000-4-2 (contact discharge); notes 1 and 2 PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT HBM MIL-Std 883 PESDxS2UT series 10 kV 30 30 30 30 23 kV kV kV kV kV
Notes 1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3. 2. Measured across either pins 1 and 3 or pins 2 and 3. ESD standards compliance ESD STANDARD IEC 61000-4-2; level 4 (ESD); see Fig.3 HBM MIL-Std 883; class 3 >4 kV CONDITIONS >15 kV (air); > 8 kV (contact)
001aaa191
handbook, halfpage
120
MLE218
Ipp 100 % 90 %
Ipp (%)
100 % Ipp; 8 s
80
e-t 50 % Ipp; 20 s
40
10 %
0 0 10 20 30 t (s) 40
tr = 0.7 to 1 ns 30 ns 60 ns
t
Fig.2
8/20 s pulse waveform according to IEC 61000-4-5.
Fig.3
ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2.
2004 Apr 15
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Philips Semiconductors
Product specification
Double ESD protection diodes in SOT23 package
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VRWM PARAMETER reverse stand-off voltage PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT IRM reverse leakage current PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT VBR breakdown voltage PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT Cd diode capacitance PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT V(CL)R clamping voltage PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT notes 1 and 2 Ipp = 1 A Ipp = 18 A Ipp = 1 A Ipp = 15 A Ipp = 1 A Ipp = 5 A Ipp = 1 A Ipp = 5 A Ipp = 1 A Ipp = 3 A - - - - - - - - - - f = 1 MHz; VR = 0 V - - - - - VRWM = 3.3 V VRWM = 5.2 V VRWM = 12 V VRWM = 15 V VRWM = 24 V IZ = 5 mA 5.2 6.4 14.7 17.6 26.5 - - - - - - - - - - CONDITIONS MIN.
PESDxS2UT series
TYP. - - - - - 0.7 0.15 <0.02 <0.02 <0.02 5.6 6.8 15.0 18.0 27.0 207 152 38 32 23 - - - - - - - - - -
MAX. 3.3 5.2 12 15 24 2 1 1 1 1 6.0 7.2 15.3 18.4 27.5 300 200 75 70 50 7 20 9 20 19 35 23 40 36 70
UNIT V V V V V A A A A A V V V V V pF pF pF pF pF V V V V V V V V V V
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Philips Semiconductors
Product specification
Double ESD protection diodes in SOT23 package
SYMBOL Rdiff PARAMETER differential resistance PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT Notes 1. Non-repetitive current pulse 8/20 s exponential decay waveform; see Fig.2. 2. Measured either across pins 1 and 3 or pins 2 and 3. GRAPHICAL DATA IR = 1 mA IR = 1 mA IR = 1 mA IR = 1 mA IR = 0.5 mA - - - - - CONDITIONS MIN.
PESDxS2UT series
TYP. - - - - -
MAX. 400 80 200 225 300
UNIT
104 Ppp (W) 103
001aaa147
1.2 Ppp Ppp(25C) 0.8
001aaa193
(1)
102
(2)
0.4
10 1 10
102
103 tp (s)
104
0 0 50 100 150 Tj (C) 200
(1) PESD3V3S2UT and PESD5V2S2UT. (2) PESD12VS2UT, PESD15VS2UT, PESD24VS2UT Tamb = 25 C. tp = 8/20 s exponential decay waveform; see Fig.2.
Fig.5 Fig.4 Peak pulse power dissipation as a function of pulse time; typical values.
Relative variation of peak pulse power as a function of junction temperature; typical values.
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Philips Semiconductors
Product specification
Double ESD protection diodes in SOT23 package
PESDxS2UT series
240 Cd (pF) 200
001aaa148
50 Cd (pF) 40
001aaa149
160
(1)
30
120
(2)
20
(1) (2)
80
10
(3)
40 0 1 2 3 4 VR (V) 5
0 0 5 10 15 20 VR (V) 25
(1) PESD3V3S2UT; VRWM = 3.3 V. (2) PESD5V2S2UT; VRWM = 5 V. Tamb = 25 C; f = 1 MHz.
(1) PESD12VS2UT; VRWM = 12 V. (2) PESD15VS2UT; VRWM = 15 V. (3) PESD24VS2UT; VRWM = 24 V. Tamb = 25 C; f = 1 MHz.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
Fig.7
Diode capacitance as a function of reverse voltage; typical values.
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Philips Semiconductors
Product specification
Double ESD protection diodes in SOT23 package
PESDxS2UT series
10
001aaa270
IR IR(25C)
(1)
1
10-1 -100
-50
0
50
100 Tj (C)
150
(1) PESD3V3S2UT; VRWM = 3.3 V. PESD5V2S2UT; VRWM = 5 V. IR is less than 10 nA at 150 C for: PESD12V52UT; VRWM = 12 V. PESD15VS2UT; VRWM = 15 V. PESD24VS2UT; VRWM = 24 V.
Fig.8
Relative variation of reverse leakage current as a function of junction temperature; typical values.
2004 Apr 15
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Philips Semiconductors
Product specification
Double ESD protection diodes in SOT23 package
PESDxS2UT series
ESD TESTER RZ
450
RG 223/U 50 coax
10x ATTENUATOR
4 GHz DIGITAL OSCILLOSCOPE 50
CZ note 1
Note 1: IEC61000-4-2 network CZ = 150 pF; RZ = 330 D.U.T.: PESDxS2UT
vertical scale = 200 V/div horizontal scale = 50 ns/div
vertical scale = 20 V/div horizontal scale = 50 ns/div PESD24VS2UT GND PESD15VS2UT
GND
GND
PESD12VS2UT
GND GND GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network)
PESD5V2S2UT
PESD3V3S2UT clamped +1 kV ESD voltage waveform (IEC61000-4-2 network)
GND
GND
vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped -1 kV ESD voltage waveform (IEC61000-4-2 network)
vertical scale = 10 V/div horizontal scale = 50 ns/div clamped -1 kV ESD voltage waveform (IEC61000-4-2 network)
001aaa492
Fig.9 ESD clamping test set-up and waveforms.
2004 Apr 15
9
Philips Semiconductors
Product specification
Double ESD protection diodes in SOT23 package
APPLICATION INFORMATION
PESDxS2UT series
The PESDxS2UT series is designed for uni-directional protection for up to two lines against damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UT series may be used on lines where the signal polarities are below ground. PESDxS2UT series provide a surge capability of up to 330 W (Ppp) per line for an 8/20 s waveform.
line 1 to be protected line 2 to be protected
line 1 to be protected
PESDxS2UT ground
PESDxS2UT ground
unidirectional protection of two lines
bidirectional protection of one line
001aaa491
Fig.10 Typical application: ESD protection of data lines.
Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: * Place the PESDxS2UT as close as possible to the input terminal or connector. * The path length between the PESDxS2UT and the protected line should be minimized. * Keep parallel signal paths to a minimum. * Avoid running protected conductors in parallel with unprotected conductors. * Minimize all printed-circuit board conductive loops including power and ground loops. * Minimize the length of transient return paths to ground. * Avoid using shared return paths to a common ground point. * Ground planes should be used whenever possible. For multilayer printed-circuit boards use ground vias.
2004 Apr 15
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Philips Semiconductors
Product specification
Double ESD protection diodes in SOT23 package
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PESDxS2UT series
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2004 Apr 15
11
Philips Semiconductors
Product specification
Double ESD protection diodes in SOT23 package
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development
PESDxS2UT series
DEFINITION This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
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Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/03/pp13
Date of release: 2004
Apr 15
Document order number:
9397 750 12823

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