View 2SK2247_313636.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2SK2247
Silicon N Channel MOS FET
Application
UPAK
High speed power switching
Features
3 * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. * Suitable for DC - DC converter, motor drive, power switch, solenoid drive
2
1
4
2, 4 1
1. Gate 2. Drain 3. Source 4. Drain
3
Table 1 Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** *** Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 30 20 2 4 2 1 150 -55 to +150 Unit V V A A A W C C
-------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
PW 100 s, duty cycle 10 % When using the alumina ceramic board (12.5 x 20 x 0.7mm) Marking is "QY"
2SK2247
Table 2 Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 30 Typ -- Max -- Unit V Test Conditions ID = 1 mA, VGS = 0 IG = 10 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 24 V, VGS = 0 ID = 100 A, VDS = 10 V
-------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
20 -- -- V
--------------------------------------------------------------------------------------
-- -- 1.0 -- -- -- 1.5 0.3 5 1 2.0 0.45 A A V
-------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
ID = 1 A VGS = 4 V * ID = 1 A VGS = 10 V * ID = 1 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 30 PW = 2 s
------------------------------------------------
-- 0.22 0.35
--------------------------------------------------------------------------------------
Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf 1.5 1.9 -- S
--------------------------------------------------------------------------------------
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time * Pulse Test -- -- -- -- -- -- -- 177 116 43 8 14 37 33 -- -- -- -- -- -- -- pF pF pF ns ns ns ns
---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ----------------------------------------------------------------
--------------------------------------------------------------------------------------
2SK2247
Power vs. Temperature Derating 1.6 Channel Dissipation Pch** (W) (** on the almina ceramic board) I D (A)
10 3 1 0.3 0.1 0.03 0.01 0.1
Maximum Safe Operation Area
1
PW
1.2
m
s
= 10 m s
C D
(1
Drain Current
O
sh
n tio ra pe
0.8
ot
Operation in this area is limited by R DS(on)
)
0.4
Ta = 25 C 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V)
0
50
100
150 Ta (C)
200
Ambient Temperature
Typical Output Characteristics 5 5.5 V I D (A) 4 5V 4.5 V Ta = 25 C Pulse Test 4V (A) 5
Typical Transfer Characteristics V DS = 10 V Pulse Test
4
3 3.5 V
ID Drain Current
3
Drain Current
2
2 75 C Ta = -25 C 25 C 0 1 2 3 Gate to Source Voltage 4 5 V GS (V)
1
3V V GS = 2.5 V
1
0
1 2 3 Drain to Source Voltage
4 5 V DS (V)
2SK2247
Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance R DS(on) ( ) Drain to Source Saturation Voltage V DS(on) (V) 0.5 Pulse Test Ta = 25 C 0.4
10 5 2 1 0.5
Static Drain to Source State Resistance vs. Drain Current Ta = 25 C Pulse Test
0.3 I D= 2 A 1A 0.5 A 0 4 8 12 Gate to Source Voltage 16 20 V GS (V)
0.2
VGS = 4 V 0.2 0.1 0.1 10 V 0.2 0.5 1 Drain Current 2 5 I D (A) 10
0.1
Static Drain to Source on State Resistance R DS(on) ( )
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 1.0
Forward Transfer Admittance vs. Drain Current 10 5 Ta = -25 C 2 1 0.5 75 C 25 C
0.8
0.6
I D= 2 A 1A VGS = 4 V 0.5 A 0.5, 1, 2 A 10 V
0.4
0.2 0 -40
0.2 0.1 0.1
V DS = 10 V Pulse Test 0.2 0.5 1 2 5 10
0 40 80 120 160 Case Temperature Tc (C)
Drain Current I D (A)
2SK2247
Typical Capacitance vs. Drain to Source Voltage 1000
200 100
Switching Characteristics
Ciss 100 Coss Crss 10 VGS = 0 f = 1 MHz 0 10 20 30 40 50
Switching Time t (ns)
Capacitance C (pF)
50
t d(off) tf tr t d(on) V GS = 10 V, PW = 2 s V DD = 30 V, duty < 1 % 0.2 0.5 Drain Current 1 2 I D (A) 5
20 10 5
1
2 0.05 0.1
Drain to Source Voltage V DS (V)
Reverse Drain Current vs. Souece to Drain Voltage 5 Pulse Test Reverse Drain Current I DR (A) 4
3 10 V 2 5V 1 V GS = 0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V SD (V)

▲Up To Search▲

Price & Availability of 2SK2247

	To Download 2SK2247 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .