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| HIGH-SPEED 5.3 kV TRIOS(R) OPTOCOUPLER SFH6135 SFH6136 FEATURES * Isolation Test Voltage: 5300 VACRMS * TTL Compatible * High Bit Rates: 1 Mbit/s * High Common-Mode Interference Immunity * Bandwidth 2 MHz * Open-Collector Output * External Base Wiring Possible * Field-Effect Stable by TRIOS (TRansparent IOn Shield) * Underwriters Lab File #52744 * V VDE 0884 Available with Option 1 DE Dimensions in inches (mm) Pin One I.D. 4 3 2 1 NC 1 8 7 6 5 Cathode (VCC) Base (VB) Collector (VO) Emitter (GND) .268 (6.81) .255 (6.48) 5 6 7 8 Anode 2 Cathode 3 NC 4 .390 (9.91) .379 (9.63) .045 (1.14) .150 (3.81) .030 (.76) .130 (3.30) .305 Typ. (7.75) Typ. .135 (3.43) .115 (2.92) 10 Typ. .040 (1.02) .030 (.76 ) .100 (2.54) Typ. 3-9 .012 (.30) .008 (.20) Description The SFH6135 and SFH6136 optocouplers feature a high signal transmission rate and a high isolation resistance. They have a GaAIAs infrared emitting diode, optically coupled with an integrated photodetector which consists of a photodiode and a highspeed transistor in a DIP-8 plastic package. Signals can be transmitted between two electrically separated circuits up to frequencies of 2 MHz. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. 4 Typ. .022 (.56) .018 (.46) Maximum Ratings Emitter Reverse Voltage................................................................................... 3 V Forward Current.............................................................................. 25 mA Peak Forward Current (t =1 ms, duty cycle 50%) .......................... 50 mA Maximum Surge Forward Current (t 1 s, 300 pulses/s) ................... 1 A Thermal Resistance ..................................................................... 700 K/W Total Power Dissipation (TA70C)................................................. 45 mW Detector Supply Voltage........................................................................ -0.5 to 15 V Output Voltage ........................................................................ -0.5 to 15 V Emitter-Base Voltage ........................................................................... 5 V Output Current .................................................................................. 8 mA Maximum Output Current ............................................................... 16 mA Base Current..................................................................................... 5 mA Thermal Resistance ..................................................................... 300 K/W Total Power Dissipation (TA70C)............................................... 100 mW Package Isolation Test Voltage ......................................................... 5300 VACRMS Pollution Degree (DIN VDE 0110)............................................................2 Creepage ................................................................................................. 7 mm Clearance................................................................................................. 7 mm Comparative Tracking Index per DIN IEC112/VDE 0303 part 1..........175 Isolation Resistance VIO=500 V, TA = 25C.........................................................................1012 VIO=500 V, TA = 100C ...................................................................... 1011 Storage Temperature Range......................................... -55C to +125C Ambient Temperature Range........................................ -55C to +100C Soldering Temperature (max. 10 s. dip soldering 0.5 mm distance from case bottom) ......................................... 260C 5-1 Characteristics (TA=25C, unless otherwise specified) Symbol Emitter Forward Voltage Breakdown Voltage Reverse Current Capacitance Temperature Coefficient of Forward Voltage Detector Supply Current, Logic Low Supply Current, Logic High Output Voltage, Output Low SFH6135 SFH6136 Output Current, Output High Output Current, Output High Current Gain Package Coupling CapacitanceInput-Output Current Transfer Ratio SFH6135 SFH6136 Current Transfer Ratio SFH6135 SFH6136 CIO 0.6 pF f=1 MHz IF=16 mA, VO=0.4 V, VCC=4.5 V, TA=25C IF=16 mA, VO=0.5 V, VCC=4.5 V ICCL ICCH 150 0.01 (1) A A IF=16 mA, VO open, VCC=15 V IF=0 mA, VO open, VCC=15 V IF=16 mA, VCC=4.5 V IO=1.1 mA IO=2.4 mA IF=0 mA, VO=VCC=5.5 V IF=0 mA VO=VCC=15 V VO=5 V, IO=3 mA VF VBR IR CO VF /TA 1.6 (1.9) 3 Unit Condition Figure 2. Common-mode interference immunity VCM V V A pF mV/C IF=16 mA IR=10 A VR=3 V VR=0 V, f=1 MHz IF=16 mA 10 V 90% 10% tr 10% 90% t tf 0.5 (10) 125 1.7 0V VO 5V A: IF=0 mA VO t VOL B: IF=16 mA t VOL VOL ICH ICH HFE 0.1 (0.4) 0.1 (0.4) 3 (500) 0.01 (1) 150 V V nA A IF 1 2 3 4 8 7 6 5 RL 5V A B VFF VO +VCM Pulse generator ZO=50 tr,tf=8 ns CTR CTR CTR CTR 16 (7) 35 (19) 5 15 % % % % Common Mode Interference Immunity VCM=10 VP-P, VCC=5 V, TA=25C High (IF=0 mA) SFH6135 (RL=4.1 k) SFH6136 (RL=1.9 k) Low (IF=16 mA) SFH6135 (RL=4.1 k) SFH6136 (RL=1.9 k) CMH CMH CML CML 1000 1000 1000 1000 V/s V/s V/s V/s SWITCHIMG TIMES Figure 1. Schematic Pulse generator ZO=50 tr,tf=5 ns duty cycle 10% t100 s t IF VO 2 5V 1.5 V t tPHL tPLH 100 IF Monitor 3 4 7 6 5 RL VO CL 15 pF 1 8 5V IF Figure 3. Output characteristics-SFH6135 Output current versus output voltage TA=25C, VCC=5 V VOL Delay Time (IF=16 mA, VCC=5 V, TA=25C) High - Low SFH6135 (RL=4.1 k) SFH6136 (RL=1.9 k) Low - High SFH6135 (RL=4.1 k) SFH6136 (RL=1.9 k) tPHL tPHL tPLH tPLH 0.3 (1.5) 0.2 (0.8) 0.3 (1.5) 0.2 (0.8) s s s s SFH6135/6136 5-2 Figure 4. Output characteristics- SFH6136 Output current versus output voltage TA=25C, VCC=5 V Figure 7. Forward current of emitting diode versus forward voltage TA=25C 102 Figure 10. Output current (high) versus ambient temperature VO=VCC=5 V, IF=0 101 100 IF/mA 10-1 10-2 10-3 1.1 1.2 1.3 VF/V 1.4 1.5 1.6 Figure 5. Permissible forward current of emitting diode versus ambient temperature Figure 8. Small signal transfer ratio versus forward current VCC=5 V, TA=25C Figure 11. Delay times versus ambient temperature IF=16 mA, VCC=5 V, SFH6135: RL=4.1 k, SFH6136: RL=1.9k Figure 6. Permissible total power dissipation versus ambient temperature Figure 9. Current transfer ratio (normalized) versus ambient temp. IF=16 mA, VO=0.4 V, VCC=5 V, TA=25C Figure 12. Current transfer ratio (normalized) versus forward current IF=16 mA, VO=0.4 V, VCC=5 V, TA=25C) SFH6135/6136 5-3 |
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