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BC817UPN NPN/PNP Silicon Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one package 5 6 4 Tape loading orientation 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 3 2 1 VPW09197 C1 6 B2 5 E2 4 Top View 654 W1s 123 Direction of Unreeling Marking on SC74 package (for example W1s) corresponds to pin 1 of device TR2 TR1 Position in tape: pin 1 opposite of feed hole side SC74_Tape 1 E1 2 B1 3 C2 EHA07177 Type BC817UPN Maximum Ratings Parameter Marking 1Bs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Value 45 50 5 500 1 100 200 330 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 115 C Junction temperature Storage temperature mA A mA mW C Thermal Resistance Junction - soldering point1) RthJS 105 K/W Aug-21-2002 BC817UPN Electrical Characteristics at TA=25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V IC = 300 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA VCEsat VBEsat hFE 160 100 250 400 0.7 1.2 V IEBO 100 nA ICBO 50 A ICBO 100 nA V(BR)EBO 5 V(BR)CBO 50 V(BR)CEO 45 V typ. max. Unit AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 60 Ccb 6 pF fT 170 MHz 1) Pulse test: t < 300s; D < 2% 2 Aug-21-2002 BC817UPN Total power dissipation Ptot = f (TS ) Collector cutoff current ICBO = f (TA ) VCB = 25V 400 mW 10 5 BC 817/818 EHP00221 CBO nA 10 4 300 Ptot 250 10 3 max 200 150 10 2 typ 100 10 1 50 0 0 20 40 60 80 100 120 C 150 10 0 0 50 100 C TA 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 Ptotmax / PtotDC 10 2 RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 3 Aug-21-2002 BC817UPN Collector-emitter saturation voltage IC = f (VCEsat ), hFE = 10 10 3 BC 817/818 EHP00223 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10 10 3 BC 817/818 EHP00222 C mA 150 C 25 C -50 C C mA 150 C 25 C -50 C 10 2 5 10 2 5 10 1 5 10 1 5 10 0 5 10 0 5 10 -1 0 0.2 0.4 0.6 V 0.8 10 -1 0 1.0 2.0 3.0 V 4.0 VCEsat V BEsat DC current gain hFE = f (IC ) VCE = 5V 10 3 h FE 5 BC 817/818 EHP00224 Transition frequency fT = f (IC) VCE = 5V 10 3 fT MHz 5 BC 817/818 EHP00218 100 C 25 C -50 C 10 5 2 10 2 10 1 5 5 10 0 10 -1 10 0 10 1 10 2 mA 10 3 10 1 10 0 10 1 10 2 mA 10 3 C C 4 Aug-21-2002 |
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