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MITSUBISHI HVIGBT MODULES
CM1800HC-34H
HIGH POWER SWITCHING USE INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1800HC-34H
q IC................................................................ 1800A q VCES ....................................................... 1700V q Insulated Type q 1-element in a pack q AISiC base plate
APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
570.25
190 171 570.25
570.25
6 - M8 NUTS C
C
C
C
G E
124 0.25 140
C
C
C
40
20
E
E
E
CM C
E
E
E
CIRCUIT DIAGRAM
E
G
20.25 41.25 3 - M4 NUTS 79.4 61.5 13 61.5 5.2
38
8 - 7MOUNTING HOLES
15 40
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
5
LABEL
29.5
28
Mar. 2003
PRE
. ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som
AR LIMIN
Y
MITSUBISHI HVIGBT MODULES
CM1800HC-34H
HIGH POWER SWITCHING USE INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS (Tj = 25C)
Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Tstg Viso -- -- Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 85C Pulse Pulse TC = 25C, IGBT part Conditions Ratings 1700 20 1800 3600 1800 3600 15600 -40 ~ +150 -40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W C C V N*m N*m N*m kg
(Note 1) (Note 1)
-- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25C)
Symbol ICES Item Conditions VCE = VCES, VGE = 0V IC = 180mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 1800A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 850V, IC = 1800A, VGE = 15V VCC = 850V, IC = 1800A VGE1 = VGE2 = 15V RG = 0.3 Resistive load switching operation IE = 1800A, VGE = 0V IE = 1800A, die / dt = -5100A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 5.5 -- 2.40 2.95 168 21.0 8.4 15.4 -- -- -- -- 2.50 -- 700 -- -- 0.006 Max 32 6.5 0.5 -- -- -- -- -- -- 1.60 2.00 2.70 0.80 -- 2.70 -- 0.008 0.013 -- Unit mA V A V nF nF nF C s s s s V s C K/W K/W K/W
Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time VEC(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance
Note 1. 2. 3. 4.
(Note 4)
Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003

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