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DATA SHEET
MICRONAS
HAL54x Hall Effect Sensor Family
Edition Sept. 13, 2004 6251-605-2DS
MICRONAS
HAL54x
Contents Page 3 3 3 4 4 4 4 4 4 5 6 6 11 11 11 11 12 13 14 18 18 20 22 24 26 26 26 26 26 28 Section 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 1.7. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. 4. 4.1. 4.2. 4.3. 4.4. 5. 5.1. 5.2. 5.3. 5.4. 6. Title Introduction Features Family Overview Marking Code Special Marking of Prototype Parts Operating Junction Temperature Range Hall Sensor Package Codes Solderability Pin Connections Functional Description Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Overview Type Description HAL542 HAL543 HAL546 HAL548 Application Notes Ambient Temperature Extended Operating Conditions Start-up Behavior EMC and ESD Data Sheet History
DATA SHEET
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DATA SHEET
HAL54x
- ideal sensor for applications in extreme automotive and industrial environments - EMC corresponding to ISO 7637
Hall Effect Sensor Family Release Note: Revision bars indicate significant changes to the previous edition.
1. Introduction The HAL54x family consists of different Hall switches produced in CMOS technology. All sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. In addition to the HAL50x/51x family, the HAL54x features a power-on and undervoltage reset. The sensors of this family differ in the switching behavior and the switching points. The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensors are designed for industrial and automotive applications and operate with supply voltages from 4.3 V to 24 V in the ambient temperature range from -40C up to 150C. All sensors are available in the SMD-package SOT89B-1 and in the leaded versions TO92UA-1 and TO92UA-2.
1.2. Family Overview The types differ according to the magnetic flux density values for the magnetic switching points and the temperature behavior of the magnetic switching points.
Type 542 543 546 548
Switching Behavior latching unipolar unipolar unipolar
Sensitivity high low high medium
see Page 18 20 22 24
Latching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied.
Unipolar Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side.
1.1. Features - switching offset compensation at typically 62 kHz - operates from 4.3 V to 24 V supply voltage - overvoltage protection at all pins - reverse-voltage protection at VDD-pin - magnetic characteristics are robust against mechanical stress effects - short-circuit protected open-drain output by thermal shut down - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - constant switching points over a wide supply voltage range - the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics
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HAL54x
1.3. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. 1.5. Hall Sensor Package Codes HALXXXPA-T
DATA SHEET
Temperature Range: K or E Package: SF for SOT89B-1 UA for TO92UA
Type K HAL542 HAL543 HAL546 HAL548 542K 543K 546K 548K
Temperature Range E
Type: 54x Example: HAL542UA-K
542E 543E 546E 548E Type: 542 Package: TO92UA Temperature Range: TJ = -40 C to +140 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Hall Sensors: Ordering Codes, Packaging, Handling".
1.3.1. Special Marking of Prototype Parts Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used for lab experiments and design-ins but are not intended to be used for qualification tests or as production parts. 1.6. Solderability all packages: according to IEC68-2-58 During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded.
1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). K: TJ = -40 C to +140 C E: TJ = -40 C to +100 C Note: Due to power dissipation, there is a difference between the ambient temperature (TA) and junction temperature. Please refer to section 5.1. on page 26 for details.
2 GND
1.7. Pin Connections
1 VDD 3 OUT
Fig. 1-1: Pin configuration
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DATA SHEET
HAL54x
2. Functional Description The Hall effect sensor is a monolithic integrated circuit that switches in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the "switching offset compensation technique". Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switching level to switching of output can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the Output-pin and VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to -15 V. No external reverse protection diode is needed at the VDD-pin for reverse voltages ranging from 0 V to -15 V. A built-in reset-circuit clamps the output to the "high" state (reset state) during power-on or when the supply voltage drops below a reset voltage of Vreset < 4.3 V. For supply voltages between Vreset and 4.3 V, the output state of the device responds to the magnetic field. For supply voltages above 4.3 V, the device works according to the specified characteristics.
VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias
HAL54x
Hysteresis Control
Power-on & Undervoltage Reset
Short Circuit & Overvoltage Protection
Hall Plate Switch
Comparator Output
OUT 3
Clock GND 2
Fig. 2-1: HAL54x block diagram
fosc
t B BON t VOUT VOH VOL t IDD
1/fosc = 9 s
tf
t
Fig. 2-2: Timing diagram
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HAL54x
3. Specifications 3.1. Outline Dimensions
DATA SHEET
Fig. 3-1: SOT89B-1: Plastic Small Outline Transistor package, 4 leads Weight approximately 0.039 g
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DATA SHEET
HAL54x
Fig. 3-2: TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread Weight approximately 0.105 g
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HAL54x
DATA SHEET
Fig. 3-3: TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread Weight approximately 0.105 g
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DATA SHEET
HAL54x
Fig. 3-4: TO92UA-2: Dimensions ammopack inline, not spread
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HAL54x
DATA SHEET
Fig. 3-5: TO92UA-1: Dimensions ammopack inline, spread
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DATA SHEET
HAL54x
3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm
3.3. Positions of Sensitive Areas SOT89B-1 y 0.95 mm nominal TO92UA-1/-2 1.0 mm nominal
3.4. Absolute Maximum Ratings Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit. All voltages listed are referenced to ground (GND). Symbol VDD VO IO TJ
1)
Parameter Supply Voltage Output Voltage Continuous Output On Current Junction Temperature Range
Pin No. 1 3 3
Min. -15 -0.3 - -40
Max. 281) 281) 501) 170
Unit V V mA C
as long as TJmax is not exceeded
3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after storing the devices for 16 hours at 155 C. The wettability was more than 95%.
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HAL54x
3.5. Recommended Operating Conditions
DATA SHEET
Functional operation of the device beyond those indicated in the "Recommended Operating Conditions" of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol VDD IO VO Parameter Supply Voltage Continuous Output On Current Output Voltage (output switched off) Pin No. 1 3 3 Min. 4.3 0 0 Max. 24 20 24 Unit V mA V
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DATA SHEET
HAL54x
3.6. Characteristics at TJ = -40 C to +140 C, VDD = 4.3 V to 24 V, GND = 0 V, at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 12 V.
Symbol IDD IDD VDDZ VOZ VOL VOL IOH IOH fosc Vreset ten(O) tr tf RthJSB case SOT89B-1 RthJA case TO92UA-1, TO92UA-2
1)
Parameter Supply Current Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Output Voltage Output Voltage over Temperature Range Output Leakage Current Output Leakage Current over Temperature Range Internal Oscillator Chopper Frequency Reset Voltage Enable Time of Output after Setting of VDD Output Rise Time Output Fall Time Thermal Resistance Junction to Substrate Backside Thermal Resistance Junction to Soldering Point
Pin No. 1 1 1 3 3 3 3 3 - 1 1 3 3 -
Min. 2.3 1.6 - - - - - - - - - - - -
Typ. 3 3 28.5 28 130 130 0.06 - 62 3.8 70 75 50 150
Max. 4.2 5.2 32 32 280 400 0.1 10 - - - 400 400 200
Unit mA mA V V mV mV A A kHz V s ns ns K/W
Conditions TJ = 25 C
IDD = 25 mA, TJ = 25 C, t = 20 ms IOH = 25 mA, TJ = 25 C, t = 20 ms IOL = 20 mA, TJ = 25 C IOL = 20 mA Output switched off, TJ = 25 C, VOH = 4.3 to 24 V Output switched off, TJ 150 C, VOH = 4.3 to 24V TJ = 25 C, VDD = 4.5 to 24 V
VDD = 12 V 1) VDD = 12 V, RL = 820 Ohm, CL = 20 pF Fiberglass Substrate 30 mm x 10 mm x 1.5 mm, pad size
-
-
150
200
K/W
B > BON + 2 mT or B < BOFF - 2 mT
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HAL54x
3.7. Magnetic Characteristics Overview at TJ = -40 C to +140 C, VDD = 4.3 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor Switching Type HAL542 latching Parameter TJ -40 C 25 C 140 C HAL543 unipolar -40 C 25 C 140 C HAL546 unipolar -40 C 25 C 140 C HAL548 unipolar -40 C 25 C 140 C Min. 1 1 0.5 21 21 21 4.3 3.8 3.2 12 12 12 On point BON Typ. 2.8 2.6 2.3 27 27 26 5.9 5.5 4.8 19 18 16 Max. 5 4.5 4.8 33 33 33 7.7 7.2 6.9 24 24 24 Min. -5 -4.5 -4.8 15 15 15 2.1 2 1.8 6 6 6 Off point BOFF Typ. -2.8 -2.6 -2.3 21 21 20 3.8 3.5 3.1 13 12 11 Max. -1 -1 -0.5 27 27 27 5.5 5 5.5 18 18 18 Min. 4.5 4.5 3.0 4 4 4 1.5 1.4 1 4 4 4
DATA SHEET
Hysteresis BHYS Typ. 5.85 5.5 4.0 6 6 5.5 2.1 2 1.7 6.2 5.6 5 Max. 7.2 6.5 6.0 8 8 8 2.9 2.8 2.6 8 8 8
Unit
mT mT mT mT mT mT mT mT mT mT mT mT
Note: For detailed descriptions of the individual types, see pages 18 and following.
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DATA SHEET
HAL54x
mA 25 20 IDD 15 10 5 0 -5 TA = -40 C TA = 25 C TA=140 C
HAL 54x
mA 5
HAL 54x
IDD
4 VDD = 24 V VDD = 12 V
3
2
VDD = 3.8 V
1 -10 -15 -15-10 -5 0
5 10 15 20 25 30 35 V VDD
0 -50
0
50
100
150 TA
200 C
Fig. 3-6: Typical supply current versus supply voltage
Fig. 3-8: Typical supply current versus ambient temperature
mA 5.0 4.5 IDD 4.0 3.5
HAL 54x
kHz 100 90
HAL 54x
TA = -40 C TA = 25 C
fosc
80 70 60 VDD = 3.8 V
3.0 2.5 2.0 1.5 1.0 0.5 0 TA = 100 C TA = 140 C
50 40 30 20 10 0 -50
VDD = 4.5 V...24 V
1
2
3
4
5
6 VDD
7
8V
0
50
100
150 TA
200 C
Fig. 3-7: Typical supply current versus supply voltage
Fig. 3-9: Typ. internal chopper frequency versus ambient temperature
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HAL54x
DATA SHEET
kHz 100 90
HAL 54x
mV 350
HAL 54x
IO = 20 mA
300 fosc 80 70 TA = 25 C 60 TA = -40 C 50 40 30 20 50 10 0 0 TA = 140 C 150 TA = 25 C TA = -40 C 200 TA = 100 C VOL 250
100
0
5
10
15
20
25 VDD
30 V
0
5
10
15
20
25 VDD
30 V
Fig. 3-10: Typ. internal chopper frequency versus supply voltage
Fig. 3-12: Typical output low voltage versus supply voltage
kHz 100 90 fosc 80 70
HAL 54x
mV 400
HAL 54x
IO = 20 mA VDD = 3.8 V
VOL 300
VDD = 4.5 V TA = 25 C VDD = 24 V TA = -40 C TA = 140 C 200
60 50 40 30
100 20 10 0 0 -50 200 C
3
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
0
50
100
150 TA
Fig. 3-11: Typ. internal chopper frequency versus supply voltage
Fig. 3-13: Typical output low voltage versus ambient temperature
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DATA SHEET
HAL54x
A 104 103 IOH 102 101 100 10-1 10-2 10-3 10-4 10-5 10-6 15 20 25 TA = 25 C TA = 100 C TA = 150 C
HAL 54x
dBA 30
HAL 54x
VDD = 12 V TA = 25 C Quasi-PeakMeasurement max. spurious signals
IDD
20
10
0
-10
TA = -40 C
-20
30 VOH
35 V
-30 0.01
0.10
1.00 1
10.00 100.00 1000.00 10 100 1000 MHz f
Fig. 3-14: Typ. output high current versus output voltage
Fig. 3-16: Typ. spectrum of supply current
A 102
HAL 54x
dBV 80 70
HAL 54x
VP = 12 V TA = 25 C Quasi-PeakMeasurement test circuit 2
101 IOH 100 VOH = 24 V VDD
60 50
10-1 VOH = 3.8 V 10-2 30 10-3 20 10-4 10 0 0.01 40
max. spurious signals
10-5 -50
0
50
100
150 TA
200 C
0.10
1.00 1
10.00 100.00 1000.00 10 100 1000 MHz f
Fig. 3-15: Typical output leakage current versus ambient temperature
Fig. 3-17: Typ. spectrum of supply voltage
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HAL542
4. Type Description 4.1. HAL542 The HAL542 is the most sensitive latching sensor of this family (see Fig. 4-1). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Applications
DATA SHEET
The HAL542 is the optimal sensor for applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: - applications with large airgap or weak magnets, - rotating speed measurement, - commutation of brushless DC motors, and - CAM shaft sensors, and - magnetic encoders.
Output Voltage VO BHYS
Magnetic Features: - switching type: latching - high sensitivity - typical BON: 2.6 mT at room temperature - typical BOFF: -2.6 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K BOFF 0 BON VOL B
Fig. 4-1: Definition of magnetic switching points for the HAL542
Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 4.3 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ -40 C 25 C 100 C 140 C Min. 1 1 0.95 0.6 On point BON Typ. 2.8 2.6 2.5 2.4 Max. 5 4.5 4.4 4.6 Off point BOFF Min. -5 -4.5 -4.4 -4.6 Typ. -2.8 -2.6 -2.5 -2.4 Max. -1 -1 -0.95 -0.6 Hysteresis BHYS Min. 4.5 4.5 3.7 3.3 Typ. 5.85 5.5 5.0 4.8 Max. 7.2 6.5 6.3 6.2 -1.5 Magnetic Offset Min. Typ. 0 0 0 0 1.5 Max. mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
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DATA SHEET
HAL542
mT 6
HAL 542
mT 6 BONmax 4
HAL 542
BON BOFF
4 BON 2 TA = -40 C 0 TA = 25 C TA = 100 C TA = 140 C -2 BOFF -4
BON BOFF
2 BONmin 0 VDD = 3.8 V VDD = 4.3 V... 24 V BOFFmax -2
BONtyp
BOFFtyp -4 BOFFmin -6 0 5 10 15 20 25 VDD 30 V -6 -50 0 50 100 150 TA, TJ 200 C
Fig. 4-2: Typ. magnetic switching points versus supply voltage
Fig. 4-3: Magnetic switching points versus temperature
Note: In the diagram "Magnetic switching points versus ambient temperature", the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature.
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HAL543
4.2. HAL543 The HAL543 is the most insensitive unipolar sensor of this family (see Fig. 4-4). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Applications
DATA SHEET
The HAL543 is the optimal sensor for applications with unipolar magnetic signals and large magnetic amplitude at the sensor position such as: - position and end point detection, - contactless solution to replace micro switches, - rotating speed measurement.
Magnetic Features: - switching type: unipolar - low sensitivity - typical BON: 27 mT at room temperature - typical BOFF: 21 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - points is -1000 ppm/K
Output Voltage VO BHYS
VOL 0 BOFF BON B
Fig. 4-4: Definition of magnetic switching points for the HAL543
Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 4.3V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ -40 C 25 C 100 C 140 C Min. 21 21 21 21 On point BON Typ. 27 27 27 27 Max. 33 33 33 33 Off point BOFF Min. 15 15 15 15 Typ. 21 21 21 21 Max. 27 27 27 27 Hysteresis BHYS Min. 4 4 4 4 Typ. 6 6 6 5.5 Max. 8 8 8 8 Magnetic Offset Min. - 18 - - Typ. 24 24 24 24 Max. - 30 - - mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
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DATA SHEET
HAL543
mT 30 28 BON BOFF 26 24
HAL 543
BON
mT 40
HAL 543
BON BOFF 35
BONmax
30 22 20 BOFF 18 TA = -40 C 16 14 12 10 10 -50 TA = 25 C TA = 100 C TA = 140 C 15 BOFFmin 20 25 BONmin BOFFtyp BOFFmax BONtyp VDD = 4.3 V... 24 V
0
5
10
15
20
25 VDD
30 V
0
50
100
150 TA, TJ
200 C
Fig. 4-5: Typ. magnetic switching points versus supply voltage
Fig. 4-6: Magnetic switching points versus temperature
Note: In the diagram "Magnetic switching points versus ambient temperature", the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature.
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HAL546
4.3. HAL546 The HAL546 is a quite sensitive unipolar sensor (see Fig. 4-7). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Applications
DATA SHEET
The HAL546 is the optimal sensor for applications with one magnetic polarity such as: - solid state switches, - contactless solution to replace micro-switches, and - rotating speed measurement.
Output Voltage Magnetic Features: - switching type: unipolar - high sensitivity - typical BON: 5.5 mT at room temperature - typical BOFF: 3.5 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K. 0 BOFF BON VOL B VO BHYS
Fig. 4-7: Definition of magnetic switching points for the HAL546
Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 4.3 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ -40 C 25 C 100 C 140 C Min. 4.3 3.8 3.5 3.2 On point BON Typ. 5.9 5.5 5.3 4.8 Max. 7.7 7.2 7 6.9 Off point BOFF Min. 2.1 2 1.9 1.8 Typ. 3.8 3.5 3.3 3.1 Max. 5.5 5 5.4 5.5 Hysteresis BHYS Min. 1.5 1.4 1.1 1 Typ. 2.1 2 1.9 1.7 Max. 2.9 2.8 2.6 2.6 Magnetic Offset Min. - 2.9 - - Typ. 4.9 4.5 4.3 4 Max. - 6.1 - - mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
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DATA SHEET
HAL546
mT 8 7 6 5 4 3 2 1 0
HAL 546
mT 8 7 6 BONmax
HAL 546
BON BOFF
BON BOFF BON
BOFFmax 5 BOFF 4 3 TA = -40 C TA = 25 C TA = 100 C TA = 140 C 0 5 10 15 20 25 VDD 30 V 0 -50 0 50 100 150 TA, TJ 200 C 2 BOFFmin 1 BONmin BOFFtyp BONtyp VDD = 4.3 V... 24 V
Fig. 4-8: Typ. magnetic switching points versus supply voltage
Fig. 4-9: Magnetic switching points versus temperature
Note: In the diagram "Magnetic switching points versus ambient temperature", the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature.
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HAL548
4.4. HAL548 The HAL548 is a unipolar switching sensor (see Fig. 4-10). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Applications
DATA SHEET
The HAL548 is the ideal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position such as: - solid state switches, - contactless solution to replace micro switches, - position and end point detection, and - rotating speed measurement.
Magnetic Features: - switching type: unipolar, - medium sensitivity - typical BON: 18 mT at room temperature - typical BOFF: 12 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BOFF BON VOL B Output Voltage VO BHYS
Fig. 4-10: Definition of magnetic switching points for the HAL548
Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 4.3 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ -40 C 25 C 100 C 140 C Min. 12 12 12 12 On point BON Typ. 19 18 18 17 Max. 24 24 24 24 Off point BOFF Min. 6 6 6 6 Typ. 13 12 12 11 Max. 18 18 18 18 Hysteresis BHYS Min. 4 4 4 4 Typ. 6 6 6 6 Max. 8 8 8 8 Magnetic Offset Min. - 9 - - Typ. 16 15 15 14 Max. - 21 - - mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
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DATA SHEET
HAL548
mT 20 BON 18 BOFF 16
HAL 548
BON
mT 30
HAL 548
BON BOFF 25
BONmax
20 14 12 10 8 6 4 TA = -40 C TA = 25 C TA = 100 C TA = 140 C 0 5 10 15 20 25 VDD 30 V 0 -50 0 50 100 150 TA, TJ 200 C 5 BOFFmin 10 BOFF BOFFmax 15 BONtyp VDD = 4.3 V... 24 V BONmin BOFFtyp
Fig. 4-11: Typ. magnetic switching points versus supply voltage
Fig. 4-12: Magnetic switching points versus temperature
Note: In the diagram "Magnetic switching points versus ambient temperature", the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature.
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HAL54x
5. Application Notes 5.1. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T At static conditions and continuous operation, the following equation applies: T = IDD * VDD * Rth For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax - T 5.2. Extended Operating Conditions All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 12). Supply Voltage Below 4.3 V The devices contain a Power-on Reset (POR) and a undervoltage reset. For VDD < Vreset the output state is high. For Vreset < VDD < 4.3 V the device responds to the magnetic field according to the specified magnetic characteristics. 5.4. EMC and ESD
DATA SHEET
For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5-1). The series resistor and the capacitor should be placed as closely as possible to the Hall sensor. Please contact Micronas for the detailed investigation reports with the EMC and ESD results.
RV 220 1 VEMC VP 4.7 nF VDD OUT 3 20 pF 2 GND RL 1.2 k
Fig. 5-1: Test circuit for EMC investigations
WARNING:
DO NOT USE THESE SENSORS IN LIFESUPPORTING SYSTEMS, AVIATION, AND AEROSPACE APPLICATIONS.
Note: The functionality of the sensor below 4.3 V is not tested. For special test conditions, please contact Micronas.
5.3. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Characteristics (see page 13). During the initialization time, the output state for the HAL54x is 'Off-state' (i.e. Output High). After ten(O), the output will be high. The output will be switched to low if the applied magnetic field B is above BON.
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DATA SHEET
HAL54x
Micronas
Sept. 13, 2004; 6251-605-2DS
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HAL54x
6. Data Sheet History 1. Data sheet: "HAL54x Hall Effect Sensor Family", Nov. 27, 2002, 6251-605-1DS. First release of the data sheet. 2. Data Sheet: "HAL54x Hall Effect Sensor Family", Sept. 13, 2004, 6251-605-2DS. Second release of the data sheet. Major changes: - new package diagrams for SOT89B-1 and TO92UA-1 - package diagram for TO92UA-2 added - ammopack diagrams for TO92UA-1/-2 added
DATA SHEET
Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany Order No. 6251-605-2DS
All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH.
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