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v02.0604
MICROWAVE CORPORATION
HMC415LP3
GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz
Features
Gain: 20 dB 34% PAE @ Psat = +26 dBm 3.7% EVM @ Pout = +15 dBm with 54 Mbps OFDM Signal Supply Voltage: +3.0 V Power Down Capability Low External Part Count
8
AMPLIFIERS - SMT
Typical Applications
This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: * 802.11a WLAN * HiperLAN WLAN * Access Points * UNII & ISM Radios
Functional Diagram
General Description
The HMC415LP3 is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3.0V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3 achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements.
Electrical Specifications, TA = +25 C, Vs = 3V, Vpd = 3V
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Error Vector Magnitude (54 Mbps OFDM Signal @ +15 dBm Pout) Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed Vpd = 0V/3V Vpd = 3V tOn, tOff Icq = 200 mA 6 0.002 / 285 7 45 28 Icq = 285 mA Icq = 200 mA 20 18 Min. Typ. 4.9 - 5.1 20 0.04 10 10 22.5 22.0 25.5 31 29 20.5 0.05 18.5 Max. Min. Typ. 5.1 - 5.4 20.5 0.04 9 12 23.0 22.5 26 32 3.7 6 0.002 / 285 7 45 6 0.002 / 285 7 45 27 18 0.05 16 Max. Min. Typ. 5.4 - 5.9 19 0.04 8 8 21.5 21.0 24 30 0.05 Max. Units GHz dB dB / C dB dB dBm dBm dBm % dB mA mA ns
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0604
HMC415LP3
GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz
Broadband Gain & Return Loss
25 20 15
Gain vs. Temperature
24 22 20 18
8
AMPLIFIERS - SMT
8 - 189
RESPONSE (dB)
10 5 0 -5 -10 -15 -20 -25 3 4 5
S21
GAIN (dB)
S11 S22
16 14 12 10 8 6 4 2 6 7 8 0 4.8 5 5.2 5.4 5.6 5.8 6
+25 C +85 C -40 C
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
-10
RETURN LOSS (dB)
-5
-5
-10
-15
+25 C +85 C -40 C
-15
+25 C +85 C -40 C
-20 4.8
5
5.2
5.4
5.6
5.8
6
-20 4.8
5
5.2
5.4
5.6
5.8
6
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
30 28 26 24
Psat vs. Temperature
30 28 26 24
P1dB (dBm)
22 20 18 16 14 12 10 4.8 5
+25 C +85 C -40 C
Psat (dBm)
22 20 18 16 14 12
+25 C +85 C -40 C
5.2
5.4
5.6
5.8
6
10 4.8
5
5.2
5.4
5.6
5.8
6
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0604
HMC415LP3
GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz
8
AMPLIFIERS - SMT
Power Compression @ 5.2 GHz
36
Output IP3 vs. Temperature
40 38 36 34
Pout (dBm), GAIN (dB), PAE (%)
32 28 24 20 16 12 8 4 0 -12 -10
Pout (dBm) Gain (dB) PAE (%)
OIP3 (dBm)
32 30 28 26
+25 C
24 22 -8 -6 -4 -2 0 2 4 6 8 10 12 20 4.8 5
+85 C -40 C
5.2
5.4
5.6
5.8
6
INPUT POWER (dBm)
FREQUENCY (GHz)
Noise Figure vs. Temperature
10 9 8
Gain & Power vs. Supply Voltage
28
Gain (dB), P1dB (dBm), Psat (dBm)
27 26 25 24 23 22 21 20 19 18 2.7 3 Vcc Supply Voltage (Vdc)
Gain P1dB Psat
NOISE FIGURE (dB)
7 6 5 4 3 2 1 0 4.8 5
+25 C +85 C -40 C
5.2
5.4
5.6
5.8
6
3.3
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
+25 C +85 C
Power Down Isolation vs. Temperature
0
+25 C +85 C -40 C
-10
-10
ISOLATION (dB)
-20
ISOLATION (dB)
5.4 5.6 5.8 6
-40 C
-20
-30
-30
-40
-40
-50 4.8
5
5.2
-50 4.8
5
5.2
5.4
5.6
5.8
6
FREQUENCY (GHz)
FREQUENCY (GHz)
8 - 190
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0604
HMC415LP3
GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz
EVM vs. Supply Current, F = 5.2 GHz
8
EVM vs. Temperature, Icc = 240 mA, F = 5.2 GHz
8
8
AMPLIFIERS - SMT
8 - 191
ERROR VECTOR MAGNITUDE (%)
7 6 5 4 3 2 1 0 10 11
Icc=160mA Icc=200mA Icc=240mA Icc=280mA
ERROR VECTOR MAGNITUDE (%)
7 6 5 4 3 2 1 0
+25 C +85 C -40 C
12
13
14
15
16
17
18
10
11
12
13
14
15
16
17
18
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
Gain, Power & Quiescent Supply Current vs. Vpd @ 5.2 GHz
27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 1.5 330 310 290 270 250 230 210 190 170 150 130 110 90 70 50 30 3
GAIN (dB), P1dB (dBm), Psat (dBm)
Icc (mA)
Gain P1dB Psat
Icc
1.75
2
2.25 Vpd (Vdc)
2.5
2.75
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0604
HMC415LP3
GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz
8
AMPLIFIERS - SMT
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) Control Voltage (Vpd) RF Input Power (RFin)(Vs = Vpd = +3.0 Vdc) Junction Temperature Continuous Pdiss (T = 85 C) (derate 17 mW/C above 85 C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +5.0 Vdc +3.5 Vdc +20 dBm 150 C 1.105 W
59 C/W -65 to +150 C -40 to +85 C
Outline Drawing
NOTES: 1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN.
8 - 192
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0604
HMC415LP3
GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz
Pin Descriptions
Pin Number Function Description Interface Schematic
8
Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic.
1
Vcc
2, 3, 5, 6, 7, 8, 9, 12, 13, 15, 16
GND
Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required.
4
RF IN
This pin is AC coupled and matched to 50 Ohms from 5.0 to 6.0 GHz.
10, 11
RF OUT
RF output and DC bias for the output stage.
14
Vpd
Power control pin. For maximum power, this pin should be connected to 3.0V. A higher voltage is not recommemded. For lower idle current, this voltage can be reduced.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
8 - 193
AMPLIFIERS - SMT
MICROWAVE CORPORATION
v02.0604
HMC415LP3
GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz
8
AMPLIFIERS - SMT
Evaluation PCB
List of Material
Item J1 - J2 J3 C1 - C3 C4 C5 C6 L1 U1 PCB* Description PC Mount SMA RF Connector 2 mm DC Header 330 pF Capacitor, 0603 Pkg. 2.2 F Capacitor, Tantalum 0.5 pF Capacitor, 0603 Pkg. 7.0 pF Capacitor, 0402 Pkg. 3.0 nH Inductor, 0805 Pkg. HMC415LP3 Amplifier 104723 Eval Board
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
* Circuit Board Material: Rogers 4350
8 - 194
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.0604
HMC415LP3
GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz
Application Circuit
8
AMPLIFIERS - SMT
Recommended Component Values L1 C1, C2, C3 C4 C5 C6 3.0 nH 330 pF 2.2 F 0.5 pF 7.0 pF
Note 1: C1 should be located < 0.1" (2.54mm) from Pin 1 (Vcc) Note 2: C3 should be located < 0.1" (2.54mm) from L1. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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