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IDP12E120 IDB12E120 Fast Switching EmCon Diode
Feature * 1200 V EmCon technology * Fast recovery * Soft switching * Low reverse recovery charge * Low forward voltage * Easy paralleling Product Summary VRRM IF VF T jmax
P-TO220-3.SMD
1200 12 1.65 150
P-TO220-2-2.
V A V C
Type IDP12E120 IDB12E120
Package P-TO220-2-2.
Ordering Code Q67040-S4389
Marking D12E120 D12E120
Pin 1 C NC
PIN 2 A C
PIN 3 A
P-TO220-3.SMD Q67040-S4385
Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current
TC=25C TC=90C
Symbol VRRM IF
Value 1200 28 17
Unit V A
Surge non repetitive forward current
TC=25C, tp=10 ms, sine halfwave
I FSM I FRM Ptot
63 42.5 W 96 46
Maximum repetitive forward current
TC=25C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25C TC=90C
Operating and storage temperature Soldering temperature
1.6mm(0.063 in.) from case for 10s
Tj , Tstg TS
-55...+150 260
C C
Rev.2
Page 1
2003-07-31
IDP12E120 IDB12E120
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area 1)
Symbol min. RthJC RthJA RthJA -
Values typ. 35 max. 1.3 62 62 -
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Reverse leakage current
V R=1200V, T j=25C V R=1200V, T j=150C
Symbol min. IR VF -
Values typ. max.
Unit
A 1.65 1.7 100 1000 V 2.15 -
Forward voltage drop
IF=12A, T j=25C IF=12A, T j=150C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air.
Rev.2
Page 2
2003-07-31
IDP12E120 IDB12E120
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time
V R=800V, IF=12A, diF/dt=800A/s, Tj =25C V R=800V, IF=12A, diF/dt=800A/s, Tj =125C V R=800V, IF=12A, diF/dt=800A/s, Tj =150C
Symbol min. t rr I rrm Q rr S -
Values typ. max.
Unit
ns 150 215 225 17 20.9 21.5 1200 1840 2025 5 5.8 5.9 A nC -
Peak reverse current
V R=800V, IF = 12 A, di F/dt=800A/s, T j=25C V R=800V, IF =12A, diF/dt=800A/s, Tj=125C V R=800V, IF =12A, diF/dt=800A/s, Tj=150C
Reverse recovery charge
V R=800V, IF=12A, diF/dt=800A/s, Tj =25C V R=800V, IF =12A, diF/dt=800A/s, Tj=125C V R=800V, IF =12A, diF/dt=800A/s, Tj=150C
Reverse recovery softness factor
V R=800V, IF=12A, diF/dt=800A/s, Tj =25C V R=800V, IF=12A, diF/dt=800A/s, Tj =125C V R=800V, IF=12A, diF/dt=800A/s, Tj =150C
Rev.2
Page 3
2003-07-31
IDP12E120 IDB12E120
1 Power dissipation Ptot = f (TC) parameter: Tj 150C
100
2 Diode forward current IF = f(TC) parameter: Tj 150C
30
W A
80 70
P tot
20
60 50 40 30 20 10 0 25
IF
15 10 5 50 75 100 150 0 25
C TC
50
75
100
C TC
150
3 Typ. diode forward current IF = f (VF)
36
4 Typ. diode forward voltage VF = f (Tj)
2.4
24A
A
28 24
-55C 25C 100C 150C
V
2
VF
1.8
IF
20 16 12
12A
1.6
6A
1.4 8 4 0 0 1.2
0.5
1
1.5
2
V VF
3
1 -60
-20
20
60
100
160 C Tj
Rev.2
Page 4
2003-07-31
IDP12E120 IDB12E120
5 Typ. reverse recovery time trr = f (diF/dt) parameter: V R = 800V, T j = 125C
800
6 Typ. reverse recovery charge Qrr =f(diF/dt) parameter: VR = 800V, Tj = 125 C
2500
ns
24A 12A 6A
nC
24A
2300 2200
600
500
Q rr
2100 2000
12A
trr
400
1900 1800
300 1700 200 1600 1500 100 1400 0 200 300 400 500 600 700 800
6A
A/s 1000 di F/dt
1300 200
300
400
500
600
700
800
A/s 1000 diF/dt
7 Typ. reverse recovery current Irr = f (diF/dt) parameter: V R = 800V, T j = 125C
26
8 Typ. reverse recovery softness factor S = f(diF /dt) parameter: VR = 800V, Tj = 125C
15
A
13 22 20 12 11
24A 12A 6A
Irr
18 16 14 12 10 8 6 200
S
24A 12A 6A
300 400 500 600 700 800
10 9 8 7 6 5 4 3
A/s 1000 di F/dt
2 200
300
400
500
600
700
800
A/s 1000 diF/dt
Rev.2
Page 5
2003-07-31
IDP12E120 IDB12E120
9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T
10 1
IDP12E120
K/W
10 0
ZthJC
10 -1
D = 0.50 10 -2 0.20 0.10 0.05 10 -3 single pulse 10 -4 -7 10 0.02 0.01
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Rev.2
Page 6
2003-07-31
IDP12E120 IDB12E120
TO-220-2-2
A P
symbol [mm] min A 9.70 15.30 0.65 3.55 2.60 9.00 13.00 17.20 4.40 0.40 B C D E max 10.10 15.90 0.85 3.85 3.00 9.40 14.00 17.80 4.80 0.60 min 0.3819 0.6024 0.0256 0.1398 0.1024 0.3543 0.5118 0.6772 0.1732 0.0157
N
dimensions [inch] max 0.3976 0.6260 0.0335 0.1516 0.1181 0.3701 0.5512 0.7008 0.1890 0.0236
D U H B V
E
F W J G
F G H J K L M N P T U V W
1.05 typ. 2.54 typ. 4.4 typ. 1.10 1.40 2.4 typ. 6.6 typ. 13.0 typ. 7.5 typ. 0.00 0.40
0.41 typ. 0.1 typ. 0.173 typ. 0.0433 0.0551 0.095 typ. 0.26 typ. 0.51 typ. 0.295 typ. 0.0000 0.0157
X L
C
M
T K
X
Rev.2
Page 7
2003-07-31
IDP12E120 IDB12E120
TO-220-3-45 (P-TO220SMD)
dimensions symbol min A B C D E F G H K L M N P Q R S T U V W X Y Z [mm] max min 9.80 10.00 1.3 typ. 1.25 1.75 0.95 1.15 2.54 typ. 0.72 0.85 5.08 typ. 4.30 1.28 9.00 4.50 1.40 9.40 [inch] max 0.3858 0.3937 0.0512 typ. 0.0492 0.0689 0.0374 0.0453 0.1 typ. 0.0283 0.0335 0.2 typ. 0.1693 0.0504 0.3543 0.1772 0.0551 0.3701
2.30 2.50 14.1 typ. 0.00 0.20 3.30 3.90 8 max 1.70 2.50 0.50 0.65 10.8 typ. 1.35 typ. 6.43 typ. 4.60 typ. 9.40 typ. 16.15 typ.
0.0906 0.0984 0.5551 typ. 0.0000 0.0079 0.1299 0.1535 8 max 0.0669 0.0984 0.0197 0.0256 0.4252 typ. 0.0532 typ. 0.2532 typ. 0.1811 typ. 0.3701 typ. 0.6358 typ.
Rev.2
Page 8
2003-07-31
IDP12E120 IDB12E120
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev.2
Page 9
2003-07-31

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