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PD -91752A
IRG4IBC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* 2.5kV, 60s insulation voltage U * 4.8 mm creapage distance to heatsink * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes * Tighter parameter distribution * Industry standard Isolated TO-220 FullpakTM outline
C
UltraFast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.5A
n-ch an nel
Benefits
* Simplified assembly * Highest efficiency and power density * HEXFREDTM antiparallel Diode minimizes switching losses and EMI
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM Visol VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to CaseU Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 11.4 6.0 52 52 6.5 52 2500 20 34 14 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
RJC RJC RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight
Typ.
--- --- --- 2.0 (0.07)
Max.
3.7 5.1 65 ---
Units
C/W g (oz)
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1
4/24/2000
IRG4IBC20UD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Collector-to-Emitter Breakdown VoltageS V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage V(BR)CES Min. 600 --- --- --- --- Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage --- Forward TransconductanceT 1.4 Zero Gate Voltage Collector Current --- --- Diode Forward Voltage Drop --- --- Gate-to-Emitter Leakage Current --- Typ. --- 0.69 1.85 2.27 1.87 --- -11 4.3 --- --- 1.4 1.3 --- Max. Units Conditions --- V VGE = 0V, IC = 250A --- V/C VGE = 0V, IC = 1.0mA 2.1 IC = 6.5A VGE = 15V --- V IC = 13A See Fig. 2, 5 --- IC = 6.5A, TJ = 150C 6.0 VCE = VGE, IC = 250A --- mV/C VCE = VGE, IC = 250A --- S VCE = 100V, IC = 6.5A 250 A VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, TJ = 150C 100 nA VGE = 20V
VGE(th)
VGE(th)/TJ
gfe ICES VFM IGES
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M /dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. 27 4.5 10 39 15 93 110 0.16 0.13 0.29 38 17 100 220 0.49 7.5 530 39 7.4 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 41 IC = 6.5A 6.8 nC VCC = 400V See Fig. 8 16 VGE = 15V --- TJ = 25C --- ns IC = 6.5A, VCC = 480V 140 VGE = 15V, RG = 50 170 Energy losses include "tail" and --- diode reverse recovery. --- mJ See Fig. 9, 10, 11, 18 0.3 --- TJ = 150C, See Fig. 9, 10, 11, 18 --- ns IC = 6.5A, VCC = 480V --- VGE = 15V, RG = 50 --- Energy losses include "tail" and --- mJ diode reverse recovery. --- nH Measured 5mm from package --- VGE = 0V --- pF VCC = 30V See Fig. 7 --- = 1.0MHz 55 ns TJ = 25C See Fig. 90 TJ = 125C 14 IF = 8.0A 5.0 A TJ = 25C See Fig. 8.0 TJ = 125C 15 VR = 200V 138 nC TJ = 25C See Fig. 360 TJ = 125C 16 di/dt 200A/s --- A/s TJ = 25C See Fig. --- TJ = 125C 17
2
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IRG4IBC20UD
10.0
For both:
8.0
LOAD CURRENT (A)
D uty cy cle: 50% TJ = 125C T s ink = 90C G ate drive as specified P ow e r Dis sip ation = 9.5 W
S q u a re w a v e : 6 0% of rate d volta ge
6.0
4.0
I
2.0
Id e a l d io d e s
0.0 0.1 1 10 100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
T J = 25C T J = 150C
10
I C , C ollec tor-to-E m itte r C u rre nt (A )
I C , Collector-to-Emitter Current (A)
10
TJ = 1 5 0C
TJ = 25 C
1
1
0.1 0.1 1
V G E = 15V 20s PULSE WIDTH
10
0.1 4 6 8
V C C = 10 V 5 s P U L S E W IDTH
10
A
12
VC E , Collector-to-Emitter Voltage (V)
VG E , Ga te -to-Em itter Volta ge (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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A
3
IRG4IBC20UD
12
2.6
V C E , C ollector-to-E m itter V oltag e (V)
V G E = 1 5V 8 0 s P U L S E W ID TH I C = 1 3A
Maximum DC Collector Current(A)
10
2.2
8
6
1.8
I C = 6 .5A
4
1.4
I C = 3.3 A
2
0 25 50 75 100 125 150
1.0 -60 -40 -20 0 20 40 60 80 100 120
A
140 160
TC , Case Temperature ( C)
T J , J u n c tio n Te m p e ra tu re (C )
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 1 10
P DM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4IBC20UD
1000
V G E , G a te -to -E m itte r V o lta g e (V )
A
C, Ca pac itanc e (p F)
800
V GE = C ie s = C re s = C oes =
0V , f = 1M H z C g e + C g c , C ce S H O R TE D C gc C ce + C g c
20
VCE = 400V I C = 6 .5 A
16
C ie s
600
12
C oes
400
8
200
C re s
4
0 1 10
0 0 5 10 15 20 25
A
30
100
V C E , C o lle c to r-to -E m itte r V o lta g e (V )
Q g , T o ta l G a te C h a rg e (n C )
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
0.32
Total Switching Losses (m J)
0.31
Total S witching Los se s (m J)
V CC VGE TJ IC
= 480V = 15V = 25 C = 6 .5A
10
R G = 50 V GE = 15V V CC = 4 8 0 V
IC = 1 3 A
1
I C = 6 .5 A
0.30
I C = 3 .3 A
0.29 0 10 20 30 40 50
A
60
0.1 -60 -40 -20 0 20 40 60 80 100 120 140
A 160
R G , G a te R e sista n c e ( )
TJ , J u n ctio n T e m p e ra tu re (C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4IBC20UD
1.2
Total Switc hing Losses (mJ )
0.9
I C , Collector Current (A)
A
RG TJ V CC V GE
= 50 = 1 5 0 C = 480V = 15V
100
VGE = 20V T J = 125 oC
10
0.6
1
0.3
0.0 0 2 4 6 8 10 12
SAFE OPERATING AREA
0.1
14
1
10
100
1000
I C , C o lle cto r-to -E m itte r C u rre n t (A )
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A )
10
TJ = 1 50 C TJ = 1 25 C TJ = 25 C
1
0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
F o rw a rd V o lta g e D ro p - V F M (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4IBC20UD
100 100
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
80
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
IF = 16 A
t rr - (ns)
60
I F = 8 .0A
I IR R M - (A )
I F = 1 6A
10
40
IF = 8 .0 A I F = 4.0 A
I F = 4 .0 A
20
0 100
d i f /d t - (A / s)
1000
1 100
1000
di f /dt - (A /s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
400
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
300
di(rec)M/dt - (A / s)
Q R R - (nC )
I F = 16 A
200
I F = 4 .0A
1000
I F = 8.0 A I F = 16 A
I F = 8 .0A
100
IF = 4.0 A
0 100 100 100
di f /dt - (A /s)
1000
1000
di f /dt - (A /s)
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRG4IBC20UD
Same ty pe device as D .U.T.
90%
Vge 80% of Vce 430F D .U .T.
VC
10% 90%
t d(off)
10% IC 5%
t d(on)
tr
tf t=5s Eon Eoff E ts = (Eon +Eoff )
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg
trr Ic
Q rr =
trr id d t tx
tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic
1 0 % Irr V cc
V pk Irr
D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ie d t t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4
E re c =
t1
t4 V d id d t t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4IBC20UD
V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 6000 F 100 V Vc*
D.U.T.
RL= 0 - 480V
480V 4 X IC @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
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IRG4IBC20UD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10H, RG = 50 (figure 19) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot. U t = 60s, f = 60Hz
Case Outline TO-220 FULLPAK
1 0 .6 0 (.4 1 7 ) 1 0 .4 0 (.4 0 9 ) o 3 .4 0 (.1 3 3 ) 3 .1 0 (.1 2 3 ) -A3 .7 0 (.1 4 5 ) 3 .2 0 (.1 2 6 ) 4 .8 0 (.1 8 9 ) 4 .6 0 (.1 8 1 )
2 .8 0 (.1 10 ) 2 .6 0 (.1 02 ) L E A D A S S IG N M E N T S LEAD ASSIGMENTS 1-G 1- GATEA T E 2 - D R A IN 2- COLLECTOR 3 - S OU R 3- EMITTER C E
7 .10 (.2 8 0 ) 6 .70 (.2 6 3 )
1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 )
1 .1 5 (.0 4 5 ) M IN . 1 2 3
NOTES: 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 .3 0 (.1 3 0 ) 3 .1 0 (.1 2 2 ) -B1 3 .7 0 (.5 4 0 ) 1 3 .5 0 (.5 3 0 ) C D
A 1 .4 0 (.0 5 5 ) 3X 1 .0 5 (.0 4 2 ) 2 .5 4 (.1 0 0 ) 2X 0 .9 0 (.0 3 5 ) 3 X 0 .7 0 (.0 2 8 ) 0 .2 5 (.0 1 0) M AM B 3X 0 .4 8 (.0 1 9 ) 0 .4 4 (.0 1 7 )
B
2 .8 5 (.1 1 2 ) 2 .6 5 (.1 0 4 )
M IN IM U M C R E E P A G E D IS T A N C E B E T W E E N A -B -C -D = 4 .8 0 (.1 89 )
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