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PD-91401
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level IRHY9230CM 100K Rads (Si) IRHY93230CM 300K Rads (Si) RDS(on) 0.8 0.8
IRHY9230CM JANSR2N7383 200V, P-CHANNEL REF: MIL-PRF-19500/615
RAD-Hard HEXFET TECHNOLOGY
TM (R)
ID QPL Part Number -6.5A JANSR2N7383 -6.5A JANSF2N7383
TO-257AA
International Rectifier's RAD-Hard MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TM
HEXFET(R)
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight -6.5 -4.1 -26 75 0.6 20 165 -6.5 7.5 -27 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063in./1.6mm from case for 10s) 4.3 (Typical)
g
For footnotes refer to the last page
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1
12/05/00
IRHY9230CM, JANSR2N7383
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units
-- -0.27 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.8 -4.0 -- -25 -250 -100 100 45 10 25 30 50 75 65 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -4.1A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -4.1A VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -6.5A VDS = -100V VDD = -100V, ID = -6.5A RG = 7.5
BVDSS Drain-to-Source Breakdown Voltage -200 BV DSS/T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 2.0 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- --
nA
nC
ns
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1360 190 40
-- -- --
pF
VGS = 0V, VDS = -25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -6.5 -26 -5.0 400 3.4
Test Conditions
A
V ns C Tj = 25C, IS = -6.5A, VGS = 0V Tj = 25C, IF = -6.5A, di/dt 100A/s VDD -25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 1.67 80
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics
IRHY9230CM, JANSR2N7383
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
Min BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-257AA) Diode Forward Voltage
100K Rads(Si)1
300K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS= -160V, VGS =0V VGS = -12V, ID =-4.1A VGS = -12V, ID = -4.1A VGS = 0V, IS = -6.5A
Max -200 -2.0 -- -- -- -- -- -- -- -4.0 -100 100 - 25 0.804 0.8 -5.0
Min -200 -2.0 -- -- -- -- -- --
Max -- -5.0 -100 100 -25 0.804 0.8 -5.0
1. Part number IRHY9230CM 2. Part number IRHY93230CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br LET MeV/(mg/cm2)) 28.0 36.8 Energy (MeV) 285 305 VDS (V) Range (m) @VGS=0V @VGS=5V @VGS=10V 43.0 -200 -200 -200 39.0 -200 -200 -125 @VGS=15V -200 -75 @VGS=20V -- --
-250 -200 VDS -150 -100 -50 0 0 5 10 VGS 15 20 Cu Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY9230CM, JANSR2N7383
Pre-Irradiation
100
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
100
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
10
-5.0V
-5.0V
1 1
20s PULSE WIDTH T = 25 C
J 10 100
1 1 10
20s PULSE WIDTH T = 150 C
J 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
-I D , Drain-to-Source Current (A)
TJ = 25 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -6.5A
2.0
10
TJ = 150 C
1.5
1.0
0.5
1 5.0
V DS = -50V 20s PULSE WIDTH 8.0 9.0 6.0 7.0 10.0
0.0 -60 -40 -20
VGS = -12V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHY9230CM, JANSR2N7383
2500
-VGS , Gate-to-Source Voltage (V)
2000
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -6.5A
16
C, Capacitance (pF)
VDS =-160V VDS =-100V VDS =-40V
1500
Ciss
12
1000
8
500
C oss C rss
4
0 1 10 100
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50 60
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
-ID , Drain Current (A) I
10
10
TJ = 150 C TJ = 25 C
1
100us
1ms
1
10ms
0.1 0.0
V GS = 0 V
1.0 2.0 3.0 4.0 5.0
0.1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHY9230CM, JANSR2N7383
Pre-Irradiation
8.0
V DS VGS
RD
D.U.T.
+
-ID , Drain Current (A)
-12V
4.0
Pulse Width 1 s Duty Factor 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
VDS
0.0 25 50 75 100 125 150
90%
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 1
P DM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
6.0
RG
V DD
Pre-Irradiation
IRHY9230CM, JANSR2N7383
VDS
EAS , Single Pulse Avalanche Energy (mJ)
L
400
RG
D .U .T.
IA S
VD D A D R IV E R
300
ID -2.9A -4.1A BOTTOM -6.5A TOP
-20V -12V
tp
0.01
200
15V
100
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
IAS
Starting T , Junction Temperature( C) J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K
-12V 12V
.2F .3F
VG
VGS
-3mA
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
QGS
QGD
D.U.T.
-
-12 V
VDS
7
IRHY9230CM, JANSR2N7383
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD =-50V, starting TJ = 25C, L= 11mH, Peak IL=- 6.5A, VGS = -12V ISD - 6.5A, di/dt 375A/s, VDD - 200V, TJ 150C Pulse width 300 s; Duty Cycle 2%
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A
Case Outline and Dimensions -- TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00
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